JPS6158274A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6158274A
JPS6158274A JP59181284A JP18128484A JPS6158274A JP S6158274 A JPS6158274 A JP S6158274A JP 59181284 A JP59181284 A JP 59181284A JP 18128484 A JP18128484 A JP 18128484A JP S6158274 A JPS6158274 A JP S6158274A
Authority
JP
Japan
Prior art keywords
gate
gaas
layer
semiconductor device
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59181284A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0354851B2 (enrdf_load_stackoverflow
Inventor
Koji Tomita
孝司 富田
Tatsuya Yamashita
山下　達哉
Mitsunori Yoshikawa
吉川　光憲
Yasuhito Nakagawa
中川　泰仁
Jiyunkou Takagi
悛公 高木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP59181284A priority Critical patent/JPS6158274A/ja
Publication of JPS6158274A publication Critical patent/JPS6158274A/ja
Publication of JPH0354851B2 publication Critical patent/JPH0354851B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6738—Schottky barrier electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP59181284A 1984-08-28 1984-08-28 半導体装置の製造方法 Granted JPS6158274A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59181284A JPS6158274A (ja) 1984-08-28 1984-08-28 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59181284A JPS6158274A (ja) 1984-08-28 1984-08-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6158274A true JPS6158274A (ja) 1986-03-25
JPH0354851B2 JPH0354851B2 (enrdf_load_stackoverflow) 1991-08-21

Family

ID=16097998

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59181284A Granted JPS6158274A (ja) 1984-08-28 1984-08-28 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6158274A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63313870A (ja) * 1987-01-20 1988-12-21 インターナショナル・スタンダード・エレクトリック・コーポレイション 自己整列電界効果トランジスタおよびその製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57120379A (en) * 1981-01-20 1982-07-27 Toshiba Corp Manufacture of gaas fet
JPS57120378A (en) * 1981-01-20 1982-07-27 Toshiba Corp Manufacture of semiconductor device
JPS57120380A (en) * 1981-01-20 1982-07-27 Toshiba Corp Manufacture of gaas fet

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57120379A (en) * 1981-01-20 1982-07-27 Toshiba Corp Manufacture of gaas fet
JPS57120378A (en) * 1981-01-20 1982-07-27 Toshiba Corp Manufacture of semiconductor device
JPS57120380A (en) * 1981-01-20 1982-07-27 Toshiba Corp Manufacture of gaas fet

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63313870A (ja) * 1987-01-20 1988-12-21 インターナショナル・スタンダード・エレクトリック・コーポレイション 自己整列電界効果トランジスタおよびその製造方法

Also Published As

Publication number Publication date
JPH0354851B2 (enrdf_load_stackoverflow) 1991-08-21

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