JPS6157719B2 - - Google Patents

Info

Publication number
JPS6157719B2
JPS6157719B2 JP57201210A JP20121082A JPS6157719B2 JP S6157719 B2 JPS6157719 B2 JP S6157719B2 JP 57201210 A JP57201210 A JP 57201210A JP 20121082 A JP20121082 A JP 20121082A JP S6157719 B2 JPS6157719 B2 JP S6157719B2
Authority
JP
Japan
Prior art keywords
film
sio
interlayer insulating
substrate
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57201210A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5992583A (ja
Inventor
Hideaki Nakane
Junji Shigeta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP57201210A priority Critical patent/JPS5992583A/ja
Publication of JPS5992583A publication Critical patent/JPS5992583A/ja
Publication of JPS6157719B2 publication Critical patent/JPS6157719B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
JP57201210A 1982-11-18 1982-11-18 ジヨセフソンデバイス用の層間絶縁膜 Granted JPS5992583A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57201210A JPS5992583A (ja) 1982-11-18 1982-11-18 ジヨセフソンデバイス用の層間絶縁膜

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57201210A JPS5992583A (ja) 1982-11-18 1982-11-18 ジヨセフソンデバイス用の層間絶縁膜

Publications (2)

Publication Number Publication Date
JPS5992583A JPS5992583A (ja) 1984-05-28
JPS6157719B2 true JPS6157719B2 (enrdf_load_stackoverflow) 1986-12-08

Family

ID=16437172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57201210A Granted JPS5992583A (ja) 1982-11-18 1982-11-18 ジヨセフソンデバイス用の層間絶縁膜

Country Status (1)

Country Link
JP (1) JPS5992583A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01106482A (ja) * 1987-10-20 1989-04-24 Fujitsu Ltd 超伝導材料構造

Also Published As

Publication number Publication date
JPS5992583A (ja) 1984-05-28

Similar Documents

Publication Publication Date Title
US3567508A (en) Low temperature-high vacuum contact formation process
US4439270A (en) Process for the controlled etching of tapered vias in borosilicate glass dielectrics
US4119483A (en) Method of structuring thin layers
US3386894A (en) Formation of metallic contacts
US3442701A (en) Method of fabricating semiconductor contacts
JPS5812344B2 (ja) 銅を基材とする金属パタ−ンの形成方法
US3708403A (en) Self-aligning electroplating mask
US3220938A (en) Oxide underlay for printed circuit components
JPS6157719B2 (enrdf_load_stackoverflow)
US4081315A (en) Cermet etch technique
KR960005662A (ko) 전계 방출 냉음극 및 그 제조 방법
JPS5823928B2 (ja) ハンドウタイソウチノセイゾウホウホウ
JPS5950095B2 (ja) 半導体装置の製造方法
JP2668931B2 (ja) 基板表面粗面化方法
KR100252757B1 (ko) 금속패턴 형성방법
JPS6261334A (ja) パタ−ンの形成方法
JPH0114701B2 (enrdf_load_stackoverflow)
KR920006202B1 (ko) Hall소자의 전극패드 제조방법
JPS58192338A (ja) 半導体装置及びその製造方法
JPH01132136A (ja) 導電パターンの製造方法
JPH01298740A (ja) 半導体装置
JPS5821310A (ja) プレ−ナ型磁気バブル素子の製造法
JPS6088484A (ja) ジヨセフソン素子のパタ−ン形成方法
JPS6167975A (ja) ジヨセフソン接合素子の製造方法
JPH0456252A (ja) 半導体装置の製造方法