JPS6156630B2 - - Google Patents

Info

Publication number
JPS6156630B2
JPS6156630B2 JP53088868A JP8886878A JPS6156630B2 JP S6156630 B2 JPS6156630 B2 JP S6156630B2 JP 53088868 A JP53088868 A JP 53088868A JP 8886878 A JP8886878 A JP 8886878A JP S6156630 B2 JPS6156630 B2 JP S6156630B2
Authority
JP
Japan
Prior art keywords
charge
region
adjacent
potential
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53088868A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5515275A (en
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP8886878A priority Critical patent/JPS5515275A/ja
Priority to US06/051,201 priority patent/US4300151A/en
Publication of JPS5515275A publication Critical patent/JPS5515275A/ja
Priority to US06/933,343 priority patent/US4814843A/en
Publication of JPS6156630B2 publication Critical patent/JPS6156630B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP8886878A 1978-07-19 1978-07-19 Charge transfer device Granted JPS5515275A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8886878A JPS5515275A (en) 1978-07-19 1978-07-19 Charge transfer device
US06/051,201 US4300151A (en) 1978-07-19 1979-06-22 Change transfer device with PN Junction gates
US06/933,343 US4814843A (en) 1978-07-19 1986-11-19 Charge transfer device with pn junction gates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8886878A JPS5515275A (en) 1978-07-19 1978-07-19 Charge transfer device

Publications (2)

Publication Number Publication Date
JPS5515275A JPS5515275A (en) 1980-02-02
JPS6156630B2 true JPS6156630B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1986-12-03

Family

ID=13954979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8886878A Granted JPS5515275A (en) 1978-07-19 1978-07-19 Charge transfer device

Country Status (2)

Country Link
US (2) US4300151A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5515275A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2801085A1 (de) * 1977-01-11 1978-07-13 Zaidan Hojin Handotai Kenkyu Statischer induktionstransistor
JPS5515275A (en) * 1978-07-19 1980-02-02 Semiconductor Res Found Charge transfer device
FR2501913A1 (fr) * 1981-03-10 1982-09-17 Thomson Csf Transistor a effet de champ de type planar comportant des electrodes a puits metallises et procede de fabrication de ce transistor
US4665325A (en) * 1984-01-30 1987-05-12 Matsushita Electric Industrial Co., Ltd. Solid state image sensor with signal amplification
JPS614376A (ja) * 1984-06-19 1986-01-10 Olympus Optical Co Ltd 固体撮像装置
US4746984A (en) * 1985-04-24 1988-05-24 Olympus Optical Co., Ltd. Solid state image sensor with lateral-type stactic induction transistors
JPS6312161A (ja) * 1986-07-03 1988-01-19 Olympus Optical Co Ltd 半導体撮像装置
JPS63194368A (ja) * 1987-02-09 1988-08-11 Toshiba Corp 電界効果型トランジスタとその製造方法
US5173756A (en) * 1990-01-05 1992-12-22 International Business Machines Corporation Trench charge-coupled device
JP2825004B2 (ja) * 1991-02-08 1998-11-18 インターナショナル・ビジネス・マシーンズ・コーポレーション 側壁電荷結合撮像素子及びその製造方法
US5502318A (en) * 1994-02-14 1996-03-26 Texas Instruments Incorporated Bipolar gate charge coupled device with clocked virtual phase
JP2001308313A (ja) * 2000-04-21 2001-11-02 Nec Corp 電荷転送装置及びそれを用いた固体撮像装置
US7235824B1 (en) 2000-08-09 2007-06-26 Dalsa, Inc. Active gate CCD image sensor
WO2021116743A1 (en) * 2019-12-13 2021-06-17 Ecole Polytechnique Federale De Lausanne (Epfl) Gradient flow emulation using drift diffusion processes

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3789267A (en) * 1971-06-28 1974-01-29 Bell Telephone Labor Inc Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel
US4032952A (en) * 1972-04-03 1977-06-28 Hitachi, Ltd. Bulk charge transfer semiconductor device
GB1437328A (en) * 1972-09-25 1976-05-26 Rca Corp Sensors having recycling means
US3825996A (en) * 1972-10-10 1974-07-30 Gen Electric Gate-diffusion isolation for jfet depletion-mode bucket brigade circuit
NL181766C (nl) * 1973-03-19 1987-10-16 Philips Nv Ladingsgekoppelde halfgeleiderschakeling, waarbij pakketten meerderheidsladingsdragers door een halfgeleiderlaag evenwijdig aan de halfgeleiderlaag kunnen worden overgedragen.
US4100513A (en) * 1975-09-18 1978-07-11 Reticon Corporation Semiconductor filtering apparatus
US4151539A (en) * 1977-12-23 1979-04-24 The United States Of America As Represented By The Secretary Of The Air Force Junction-storage JFET bucket-brigade structure
JPS5515275A (en) * 1978-07-19 1980-02-02 Semiconductor Res Found Charge transfer device
US4378629A (en) * 1979-08-10 1983-04-05 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor, fabrication method

Also Published As

Publication number Publication date
US4814843A (en) 1989-03-21
US4300151A (en) 1981-11-10
JPS5515275A (en) 1980-02-02

Similar Documents

Publication Publication Date Title
EP0048480B1 (en) Semiconductor photoelectric converter
US3858232A (en) Information storage devices
US3896485A (en) Charge-coupled device with overflow protection
US4012759A (en) Bulk channel charge transfer device
JPS6156630B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0410785B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS5917581B2 (ja) 固体撮像装置
US3995302A (en) Transfer gate-less photosensor configuration
US5055900A (en) Trench-defined charge-coupled device
US6995795B1 (en) Method for reducing dark current
JPH0446458B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US4623909A (en) Semiconductor photodetector
EP0059547B1 (en) Clock controlled anti-blooming for virtual phase ccd's
KR930007532B1 (ko) Soi 구조를 이용한 3차원 ccd 영상소자 및 그 제조방법
JP2816063B2 (ja) 電荷転送装置
JPS63500690A (ja) Ｃｃｄイメ−ジセンサにおけるブル−ミング制御
GB2168844A (en) Charge-coupled device
JP3366656B2 (ja) 電荷転送装置とその製造方法および駆動方法
JPH06216161A (ja) 狭いチャネル効果をもつ擬似２相電荷結合素子
JPH0763090B2 (ja) 固体撮像装置
JPH0230189B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2909158B2 (ja) 電荷結合装置
JPH0661469A (ja) Ｃｃｄ映像素子
JP2897689B2 (ja) 固体撮像装置
JPS6134263B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)