JPS6155264B2 - - Google Patents
Info
- Publication number
- JPS6155264B2 JPS6155264B2 JP17204780A JP17204780A JPS6155264B2 JP S6155264 B2 JPS6155264 B2 JP S6155264B2 JP 17204780 A JP17204780 A JP 17204780A JP 17204780 A JP17204780 A JP 17204780A JP S6155264 B2 JPS6155264 B2 JP S6155264B2
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- thin
- diaphragm
- pressure transducer
- outer diameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000005259 measurement Methods 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17204780A JPS5796574A (en) | 1980-12-08 | 1980-12-08 | Semiconductor pressure transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17204780A JPS5796574A (en) | 1980-12-08 | 1980-12-08 | Semiconductor pressure transducer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5796574A JPS5796574A (en) | 1982-06-15 |
| JPS6155264B2 true JPS6155264B2 (de) | 1986-11-27 |
Family
ID=15934544
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17204780A Granted JPS5796574A (en) | 1980-12-08 | 1980-12-08 | Semiconductor pressure transducer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5796574A (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01107310A (ja) * | 1987-10-20 | 1989-04-25 | Matsushita Electric Ind Co Ltd | 浮動型磁気ヘッド |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06132545A (ja) * | 1992-10-19 | 1994-05-13 | Mitsubishi Electric Corp | 圧力検出装置 |
| JP3323032B2 (ja) * | 1995-06-07 | 2002-09-09 | 三菱電機株式会社 | 半導体圧力検出装置の設計方法 |
-
1980
- 1980-12-08 JP JP17204780A patent/JPS5796574A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01107310A (ja) * | 1987-10-20 | 1989-04-25 | Matsushita Electric Ind Co Ltd | 浮動型磁気ヘッド |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5796574A (en) | 1982-06-15 |
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