JPS6152972B2 - - Google Patents
Info
- Publication number
- JPS6152972B2 JPS6152972B2 JP610878A JP610878A JPS6152972B2 JP S6152972 B2 JPS6152972 B2 JP S6152972B2 JP 610878 A JP610878 A JP 610878A JP 610878 A JP610878 A JP 610878A JP S6152972 B2 JPS6152972 B2 JP S6152972B2
- Authority
- JP
- Japan
- Prior art keywords
- plane
- single crystal
- heat treatment
- ions
- silicon single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 24
- 238000010438 heat treatment Methods 0.000 claims description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 16
- 238000005468 ion implantation Methods 0.000 claims description 13
- 150000002500 ions Chemical class 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229910052785 arsenic Inorganic materials 0.000 claims description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 229910001439 antimony ion Inorganic materials 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 11
- 230000007547 defect Effects 0.000 description 10
- 239000012535 impurity Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 238000000137 annealing Methods 0.000 description 4
- 229910052787 antimony Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- -1 arsenic ions Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP610878A JPS54100253A (en) | 1978-01-25 | 1978-01-25 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP610878A JPS54100253A (en) | 1978-01-25 | 1978-01-25 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54100253A JPS54100253A (en) | 1979-08-07 |
| JPS6152972B2 true JPS6152972B2 (de) | 1986-11-15 |
Family
ID=11629294
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP610878A Granted JPS54100253A (en) | 1978-01-25 | 1978-01-25 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54100253A (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58142303A (ja) * | 1982-02-17 | 1983-08-24 | Sharp Corp | 光導波路 |
| JPS6484719A (en) * | 1987-09-28 | 1989-03-30 | Matsushita Electronics Corp | Manufacture of semiconductor device |
-
1978
- 1978-01-25 JP JP610878A patent/JPS54100253A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54100253A (en) | 1979-08-07 |
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