JPS6152567B2 - - Google Patents
Info
- Publication number
- JPS6152567B2 JPS6152567B2 JP54111649A JP11164979A JPS6152567B2 JP S6152567 B2 JPS6152567 B2 JP S6152567B2 JP 54111649 A JP54111649 A JP 54111649A JP 11164979 A JP11164979 A JP 11164979A JP S6152567 B2 JPS6152567 B2 JP S6152567B2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- resist film
- pattern
- film
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 16
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000002904 solvent Substances 0.000 claims description 4
- 229920001577 copolymer Polymers 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 229920002454 poly(glycidyl methacrylate) polymer Polymers 0.000 claims description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 claims 1
- 230000036211 photosensitivity Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 14
- 238000005530 etching Methods 0.000 description 8
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- 230000007261 regionalization Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical compound CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005865 ionizing radiation Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- LEEBETSNAGEFCY-UHFFFAOYSA-N [N-]=[N+]=[N-].[N-]=[N+]=[N-].O=C1C=CC(=O)C=C1 Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].O=C1C=CC(=O)C=C1 LEEBETSNAGEFCY-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11164979A JPS5636134A (en) | 1979-09-03 | 1979-09-03 | Forming method for pattern of semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11164979A JPS5636134A (en) | 1979-09-03 | 1979-09-03 | Forming method for pattern of semiconductor substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5636134A JPS5636134A (en) | 1981-04-09 |
| JPS6152567B2 true JPS6152567B2 (en, 2012) | 1986-11-13 |
Family
ID=14566667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11164979A Granted JPS5636134A (en) | 1979-09-03 | 1979-09-03 | Forming method for pattern of semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5636134A (en, 2012) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59125624A (ja) * | 1982-12-29 | 1984-07-20 | Fujitsu Ltd | パタ−ン形成方法 |
| JPS60106132A (ja) * | 1983-11-15 | 1985-06-11 | Fujitsu Ltd | パタ−ン形成方法 |
-
1979
- 1979-09-03 JP JP11164979A patent/JPS5636134A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5636134A (en) | 1981-04-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6323657B2 (en, 2012) | ||
| US6610616B2 (en) | Method for forming micro-pattern of semiconductor device | |
| JP2994501B2 (ja) | パターン形成方法 | |
| JPS6152567B2 (en, 2012) | ||
| JPS6411938B2 (en, 2012) | ||
| JPS5828571B2 (ja) | 微細加工用レジスト形成方法 | |
| JPH04176123A (ja) | 半導体装置の製造方法 | |
| JPH01118127A (ja) | パターン形成方法 | |
| JPS6327848B2 (en, 2012) | ||
| JPS6040184B2 (ja) | 半導体装置の製造方法 | |
| JPH02156244A (ja) | パターン形成方法 | |
| JPS6048023B2 (ja) | ポジ型レジスト | |
| JP2604573B2 (ja) | 微細パターン形成方法 | |
| JPH11204414A (ja) | パターン形成法 | |
| JPS6151414B2 (en, 2012) | ||
| JPH0147009B2 (en, 2012) | ||
| JP3563138B2 (ja) | 感光性樹脂組成物を用いたパターン形成方法 | |
| JPS61121332A (ja) | パタ−ン形成方法 | |
| JPH03269533A (ja) | フォトマスクの製造方法およびそれに使用する基板 | |
| JPS5955020A (ja) | 微細パタ−ン形成方法 | |
| JPS61263223A (ja) | 半導体装置の製造方法 | |
| JPS6047419A (ja) | 多層レベルパタ−ンニング法 | |
| JPH0313949A (ja) | レジストパターンの形成方法 | |
| JPH03188447A (ja) | レジストパターンの形成方法 | |
| JPS589323A (ja) | 微細レジストパタンの形成方法 |