JPS6151414B2 - - Google Patents
Info
- Publication number
- JPS6151414B2 JPS6151414B2 JP1356379A JP1356379A JPS6151414B2 JP S6151414 B2 JPS6151414 B2 JP S6151414B2 JP 1356379 A JP1356379 A JP 1356379A JP 1356379 A JP1356379 A JP 1356379A JP S6151414 B2 JPS6151414 B2 JP S6151414B2
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- layer
- beam resist
- water
- conductive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010894 electron beam technology Methods 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 15
- 229920003169 water-soluble polymer Polymers 0.000 claims description 13
- 239000002861 polymer material Substances 0.000 claims description 8
- 239000012777 electrically insulating material Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 9
- 239000004372 Polyvinyl alcohol Substances 0.000 description 8
- 229920002451 polyvinyl alcohol Polymers 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 4
- 229910000423 chromium oxide Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 2
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 2
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012070 reactive reagent Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1356379A JPS55105331A (en) | 1979-02-08 | 1979-02-08 | Method for forming electronic-beam resist pattern on electrical insulating material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1356379A JPS55105331A (en) | 1979-02-08 | 1979-02-08 | Method for forming electronic-beam resist pattern on electrical insulating material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55105331A JPS55105331A (en) | 1980-08-12 |
| JPS6151414B2 true JPS6151414B2 (nl) | 1986-11-08 |
Family
ID=11836632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1356379A Granted JPS55105331A (en) | 1979-02-08 | 1979-02-08 | Method for forming electronic-beam resist pattern on electrical insulating material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55105331A (nl) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0715868B2 (ja) * | 1983-09-30 | 1995-02-22 | 株式会社東芝 | パターン形成方法 |
| CN111320164A (zh) * | 2020-02-28 | 2020-06-23 | 南方科技大学 | 一种悬空石墨烯结构的制备方法及由其得到的悬空石墨烯结构和应用 |
-
1979
- 1979-02-08 JP JP1356379A patent/JPS55105331A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55105331A (en) | 1980-08-12 |
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