JPS6151414B2 - - Google Patents

Info

Publication number
JPS6151414B2
JPS6151414B2 JP54013563A JP1356379A JPS6151414B2 JP S6151414 B2 JPS6151414 B2 JP S6151414B2 JP 54013563 A JP54013563 A JP 54013563A JP 1356379 A JP1356379 A JP 1356379A JP S6151414 B2 JPS6151414 B2 JP S6151414B2
Authority
JP
Japan
Prior art keywords
electron beam
layer
beam resist
water
conductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54013563A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55105331A (en
Inventor
Yasuo Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP1356379A priority Critical patent/JPS55105331A/ja
Publication of JPS55105331A publication Critical patent/JPS55105331A/ja
Publication of JPS6151414B2 publication Critical patent/JPS6151414B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Electron Beam Exposure (AREA)
JP1356379A 1979-02-08 1979-02-08 Method for forming electronic-beam resist pattern on electrical insulating material Granted JPS55105331A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1356379A JPS55105331A (en) 1979-02-08 1979-02-08 Method for forming electronic-beam resist pattern on electrical insulating material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1356379A JPS55105331A (en) 1979-02-08 1979-02-08 Method for forming electronic-beam resist pattern on electrical insulating material

Publications (2)

Publication Number Publication Date
JPS55105331A JPS55105331A (en) 1980-08-12
JPS6151414B2 true JPS6151414B2 (enExample) 1986-11-08

Family

ID=11836632

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1356379A Granted JPS55105331A (en) 1979-02-08 1979-02-08 Method for forming electronic-beam resist pattern on electrical insulating material

Country Status (1)

Country Link
JP (1) JPS55105331A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0715868B2 (ja) * 1983-09-30 1995-02-22 株式会社東芝 パターン形成方法
CN111320164A (zh) * 2020-02-28 2020-06-23 南方科技大学 一种悬空石墨烯结构的制备方法及由其得到的悬空石墨烯结构和应用

Also Published As

Publication number Publication date
JPS55105331A (en) 1980-08-12

Similar Documents

Publication Publication Date Title
US20240295817A1 (en) Photolithography method based on bilayer photoresist
US3508982A (en) Method of making an ultra-violet selective template
KR100298609B1 (ko) 위상쉬프트층을갖는포토마스크의제조방법
JP2883798B2 (ja) 半導体素子のパターン化方法
JPS5851412B2 (ja) 半導体装置の微細加工方法
JPH035573B2 (enExample)
US5139922A (en) Method of making resist pattern
JPH0572747A (ja) パターン形成方法
JPH0466345B2 (enExample)
JPS6151414B2 (enExample)
EP0030604A2 (en) Photoresist image hardening process
JPS6340306B2 (enExample)
JPH0795509B2 (ja) レジストパタ−ンの形成方法
US3951659A (en) Method for resist coating of a glass substrate
US3701659A (en) Photolithographic masks of semiconductor material
JPS6024933B2 (ja) 電子線感応性無機レジスト
JP2580681B2 (ja) 半導体装置の製造方法
JPH0542810B2 (enExample)
JPH11204414A (ja) パターン形成法
JPH02156244A (ja) パターン形成方法
JPS6152567B2 (enExample)
JPS63254728A (ja) レジストパタ−ンの形成方法
JPS6040184B2 (ja) 半導体装置の製造方法
JPS6411938B2 (enExample)
JPH04304452A (ja) 位相シフト層を有するフォトマスク及びその製造方法