JPS6150358A - 半導体集積回路 - Google Patents

半導体集積回路

Info

Publication number
JPS6150358A
JPS6150358A JP59172559A JP17255984A JPS6150358A JP S6150358 A JPS6150358 A JP S6150358A JP 59172559 A JP59172559 A JP 59172559A JP 17255984 A JP17255984 A JP 17255984A JP S6150358 A JPS6150358 A JP S6150358A
Authority
JP
Japan
Prior art keywords
input
gate
voltage
circuit
gate modulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59172559A
Other languages
English (en)
Japanese (ja)
Inventor
Hiroshi Iwahashi
岩橋 弘
Masamichi Asano
正通 浅野
Akira Narita
晃 成田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Tosbac Computer System Co Ltd
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Tosbac Computer System Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp, Tosbac Computer System Co Ltd filed Critical Toshiba Corp
Priority to JP59172559A priority Critical patent/JPS6150358A/ja
Priority to DE85109701T priority patent/DE3587654T2/de
Priority to EP85109701A priority patent/EP0173108B1/en
Priority to US06/761,707 priority patent/US4692834A/en
Publication of JPS6150358A publication Critical patent/JPS6150358A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Non-Volatile Memory (AREA)
JP59172559A 1984-08-20 1984-08-20 半導体集積回路 Pending JPS6150358A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP59172559A JPS6150358A (ja) 1984-08-20 1984-08-20 半導体集積回路
DE85109701T DE3587654T2 (de) 1984-08-20 1985-08-02 Schutzschaltung mit variablem Schwellwert gegen elektrostatischen Durchschlag für MOS-Schaltung.
EP85109701A EP0173108B1 (en) 1984-08-20 1985-08-02 Electrostatic discharge protection circuit with variable limiting threshold for MOS device
US06/761,707 US4692834A (en) 1984-08-20 1985-08-02 Electrostatic discharge protection circuit with variable limiting threshold for MOS device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59172559A JPS6150358A (ja) 1984-08-20 1984-08-20 半導体集積回路

Publications (1)

Publication Number Publication Date
JPS6150358A true JPS6150358A (ja) 1986-03-12

Family

ID=15944097

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59172559A Pending JPS6150358A (ja) 1984-08-20 1984-08-20 半導体集積回路

Country Status (4)

Country Link
US (1) US4692834A (https=)
EP (1) EP0173108B1 (https=)
JP (1) JPS6150358A (https=)
DE (1) DE3587654T2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09116023A (ja) * 1995-10-16 1997-05-02 Nec Corp 半導体集積回路装置の入力保護回路

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4802054A (en) * 1987-03-13 1989-01-31 Motorola, Inc. Input protection for an integrated circuit
US4855620A (en) * 1987-11-18 1989-08-08 Texas Instruments Incorporated Output buffer with improved ESD protection
JPH07105446B2 (ja) * 1988-01-11 1995-11-13 株式会社東芝 Mos型半導体装置の入力保護回路
US4996626A (en) * 1988-10-14 1991-02-26 National Semiconductor Corp. Resistorless electrostatic discharge protection device for high speed integrated circuits
US5051604A (en) * 1989-05-11 1991-09-24 Westinghouse Electric Corp. Electrically normally closed switch device
US5243490A (en) * 1989-06-28 1993-09-07 Texas Instruments Incorporated ESD protected FAMOS transistor
US5272586A (en) * 1991-01-29 1993-12-21 National Semiconductor Corporation Technique for improving ESD immunity
US5246872A (en) * 1991-01-30 1993-09-21 National Semiconductor Corporation Electrostatic discharge protection device and a method for simultaneously forming MOS devices with both lightly doped and non lightly doped source and drain regions
US5208475A (en) * 1991-01-30 1993-05-04 National Semiconductor Corporation Electrostatic discharge protection device and a method for simultaneously forming MOS devices with both lightly doped and non lightly doped source and drain regions
US5287098A (en) * 1991-02-11 1994-02-15 Briggs & Stratton Corp. Fail safe system for a mechanical lock and key set with electrical interlock
US5455571A (en) * 1991-02-11 1995-10-03 Strattec Security Corporation Fail safe system for a mechanical lock key set with electronic interlock
NL9101044A (nl) * 1991-06-17 1993-01-18 Sierra Semiconductor Bv Wisselspanningsbegrenzer in mos-technologie.
US5255146A (en) * 1991-08-29 1993-10-19 National Semiconductor Corporation Electrostatic discharge detection and clamp control circuit
US5446320A (en) * 1992-01-24 1995-08-29 Compaq Computer Corp. Circuit for clamping power output to ground while the computer is deactivated
JP2965840B2 (ja) * 1993-12-02 1999-10-18 株式会社東芝 トランジスタ回路
US5473500A (en) * 1994-01-13 1995-12-05 Atmel Corporation Electrostatic discharge circuit for high speed, high voltage circuitry
US5553070A (en) * 1994-09-13 1996-09-03 Riley; Robert E. Data link module for time division multiplexing control systems
US5532178A (en) * 1995-04-27 1996-07-02 Taiwan Semiconductor Manufacturing Company Gate process for NMOS ESD protection circuits
US5745323A (en) * 1995-06-30 1998-04-28 Analog Devices, Inc. Electrostatic discharge protection circuit for protecting CMOS transistors on integrated circuit processes
US5729419A (en) * 1995-11-20 1998-03-17 Integrated Device Technology, Inc. Changed device model electrostatic discharge protection circuit for output drivers and method of implementing same
US5751525A (en) * 1996-01-05 1998-05-12 Analog Devices, Inc. EOS/ESD Protection circuit for an integrated circuit with operating/test voltages exceeding power supply rail voltages
US5663678A (en) * 1996-02-02 1997-09-02 Vanguard International Semiconductor Corporation ESD protection device
US5917689A (en) * 1996-09-12 1999-06-29 Analog Devices, Inc. General purpose EOS/ESD protection circuit for bipolar-CMOS and CMOS integrated circuits
TW322632B (en) * 1996-10-14 1997-12-11 Vanguard Int Semiconduct Corp Electrostatic discharge protection device for integrated circuit input/output port
US5838146A (en) * 1996-11-12 1998-11-17 Analog Devices, Inc. Method and apparatus for providing ESD/EOS protection for IC power supply pins
DE19709717C1 (de) * 1997-03-10 1998-09-24 Siemens Ag Vorrichtung und Verfahren zum Ansteuern wenigstens eines kapazitiven Stellgliedes
US6624998B2 (en) 2000-01-24 2003-09-23 Medtronic, Inc. Electrostatic discharge protection scheme in low potential drop environments
US6552886B1 (en) 2000-06-29 2003-04-22 Pericom Semiconductor Corp. Active Vcc-to-Vss ESD clamp with hystersis for low supply chips
US6958551B2 (en) * 2002-06-25 2005-10-25 Strattec Security Corporation Vehicle coded ignition lock using a magnetic sensor
AU2002950581A0 (en) * 2002-08-02 2002-09-12 Wayne Callen Electrical safety circuit
US6898061B1 (en) * 2003-07-10 2005-05-24 Polarfab, Llc System and method for dynamic ESD Protection
US7750439B2 (en) * 2005-11-28 2010-07-06 Kabushiki Kaisha Toshiba ESD protection device
US8004807B2 (en) * 2008-01-31 2011-08-23 Agere Systems Inc. Overvoltage protection circuit with reduced sensitivity to process variations
US20100109053A1 (en) * 2008-11-04 2010-05-06 Ching-Han Jan Semiconductor device having integrated circuit with pads coupled by external connecting component and method for modifying integrated circuit

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL261262A (https=) * 1960-02-25 1900-01-01
US3407339A (en) * 1966-05-02 1968-10-22 North American Rockwell Voltage protection device utilizing a field effect transistor
JPS5530312B2 (https=) * 1975-01-16 1980-08-09
JPS5299786A (en) * 1976-02-18 1977-08-22 Agency Of Ind Science & Technol Mos integrated circuit
US4037140A (en) * 1976-04-14 1977-07-19 Rca Corporation Protection circuit for insulated-gate field-effect transistors (IGFETS)
JPS5563871A (en) * 1978-11-06 1980-05-14 Nec Corp Protector for field-effect transistor with insulated gate
US4282556A (en) * 1979-05-21 1981-08-04 Rca Corporation Input protection device for insulated gate field effect transistor
JPS577969A (en) * 1980-06-18 1982-01-16 Toshiba Corp Semiconductor integrated circuit
JPS583285A (ja) * 1981-06-30 1983-01-10 Fujitsu Ltd 半導体集積回路の保護装置
US4527213A (en) * 1981-11-27 1985-07-02 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor integrated circuit device with circuits for protecting an input section against an external surge

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09116023A (ja) * 1995-10-16 1997-05-02 Nec Corp 半導体集積回路装置の入力保護回路

Also Published As

Publication number Publication date
EP0173108A2 (en) 1986-03-05
US4692834B1 (https=) 1993-03-02
DE3587654D1 (de) 1993-12-16
US4692834A (en) 1987-09-08
DE3587654T2 (de) 1994-04-28
EP0173108B1 (en) 1993-11-10
EP0173108A3 (en) 1987-07-22

Similar Documents

Publication Publication Date Title
JPS6150358A (ja) 半導体集積回路
US5463520A (en) Electrostatic discharge protection with hysteresis trigger circuit
US5473500A (en) Electrostatic discharge circuit for high speed, high voltage circuitry
US3636385A (en) Protection circuit
US4456939A (en) Input protective circuit for semiconductor device
KR900003834B1 (ko) 반도체 집적회로
US4581672A (en) Internal high voltage (Vpp) regulator for integrated circuits
US6980043B2 (en) Ferroelectric element and a ferroelectric gate device using the same
US5942931A (en) Circuit for protecting an IC from noise
US6534833B1 (en) Semiconductor device with protection circuitry and method
US5698886A (en) Protection circuit against electrostatic discharges
US3492511A (en) High input impedance circuit for a field effect transistor including capacitive gate biasing means
JPH0548021A (ja) 半導体保護回路
JP2884946B2 (ja) 半導体集積回路装置
JP3554353B2 (ja) 電界効果トランジスタの保護装置
JPS5821856A (ja) 半導体装置
US4489245A (en) D.C. Voltage bias circuit in an integrated circuit
JP2871329B2 (ja) 半導体集積回路
JPH0563540A (ja) 入力回路
CN114388492B (zh) 静电放电保护电路以及半导体电路
JPH061832B2 (ja) 入出力保護装置
JPS60786B2 (ja) 絶縁ゲ−ト型電界効果トランジスタ集積回路
JP3377148B2 (ja) 電圧出力装置およびその動作方法
US6151199A (en) Semiconductor integrated circuit device
JPS6151877A (ja) 半導体装置