DE3587654T2 - Schutzschaltung mit variablem Schwellwert gegen elektrostatischen Durchschlag für MOS-Schaltung. - Google Patents

Schutzschaltung mit variablem Schwellwert gegen elektrostatischen Durchschlag für MOS-Schaltung.

Info

Publication number
DE3587654T2
DE3587654T2 DE85109701T DE3587654T DE3587654T2 DE 3587654 T2 DE3587654 T2 DE 3587654T2 DE 85109701 T DE85109701 T DE 85109701T DE 3587654 T DE3587654 T DE 3587654T DE 3587654 T2 DE3587654 T2 DE 3587654T2
Authority
DE
Germany
Prior art keywords
input
potential
circuit
gate
predetermined threshold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE85109701T
Other languages
German (de)
English (en)
Other versions
DE3587654D1 (de
Inventor
Masamichi C O Patent Div Asano
Hiroshi C O Patent Di Iwahashi
Akira Narita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Information Systems Japan Corp
Original Assignee
Toshiba Corp
Toshiba Information Systems Japan Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Information Systems Japan Corp filed Critical Toshiba Corp
Publication of DE3587654D1 publication Critical patent/DE3587654D1/de
Application granted granted Critical
Publication of DE3587654T2 publication Critical patent/DE3587654T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Non-Volatile Memory (AREA)
DE85109701T 1984-08-20 1985-08-02 Schutzschaltung mit variablem Schwellwert gegen elektrostatischen Durchschlag für MOS-Schaltung. Expired - Lifetime DE3587654T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59172559A JPS6150358A (ja) 1984-08-20 1984-08-20 半導体集積回路

Publications (2)

Publication Number Publication Date
DE3587654D1 DE3587654D1 (de) 1993-12-16
DE3587654T2 true DE3587654T2 (de) 1994-04-28

Family

ID=15944097

Family Applications (1)

Application Number Title Priority Date Filing Date
DE85109701T Expired - Lifetime DE3587654T2 (de) 1984-08-20 1985-08-02 Schutzschaltung mit variablem Schwellwert gegen elektrostatischen Durchschlag für MOS-Schaltung.

Country Status (4)

Country Link
US (1) US4692834A (https=)
EP (1) EP0173108B1 (https=)
JP (1) JPS6150358A (https=)
DE (1) DE3587654T2 (https=)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4802054A (en) * 1987-03-13 1989-01-31 Motorola, Inc. Input protection for an integrated circuit
US4855620A (en) * 1987-11-18 1989-08-08 Texas Instruments Incorporated Output buffer with improved ESD protection
JPH07105446B2 (ja) * 1988-01-11 1995-11-13 株式会社東芝 Ｍｏｓ型半導体装置の入力保護回路
US4996626A (en) * 1988-10-14 1991-02-26 National Semiconductor Corp. Resistorless electrostatic discharge protection device for high speed integrated circuits
US5051604A (en) * 1989-05-11 1991-09-24 Westinghouse Electric Corp. Electrically normally closed switch device
US5243490A (en) * 1989-06-28 1993-09-07 Texas Instruments Incorporated ESD protected FAMOS transistor
US5272586A (en) * 1991-01-29 1993-12-21 National Semiconductor Corporation Technique for improving ESD immunity
US5246872A (en) * 1991-01-30 1993-09-21 National Semiconductor Corporation Electrostatic discharge protection device and a method for simultaneously forming MOS devices with both lightly doped and non lightly doped source and drain regions
US5208475A (en) * 1991-01-30 1993-05-04 National Semiconductor Corporation Electrostatic discharge protection device and a method for simultaneously forming MOS devices with both lightly doped and non lightly doped source and drain regions
US5287098A (en) * 1991-02-11 1994-02-15 Briggs & Stratton Corp. Fail safe system for a mechanical lock and key set with electrical interlock
US5455571A (en) * 1991-02-11 1995-10-03 Strattec Security Corporation Fail safe system for a mechanical lock key set with electronic interlock
NL9101044A (nl) * 1991-06-17 1993-01-18 Sierra Semiconductor Bv Wisselspanningsbegrenzer in mos-technologie.
US5255146A (en) * 1991-08-29 1993-10-19 National Semiconductor Corporation Electrostatic discharge detection and clamp control circuit
US5446320A (en) * 1992-01-24 1995-08-29 Compaq Computer Corp. Circuit for clamping power output to ground while the computer is deactivated
JP2965840B2 (ja) * 1993-12-02 1999-10-18 株式会社東芝 トランジスタ回路
US5473500A (en) * 1994-01-13 1995-12-05 Atmel Corporation Electrostatic discharge circuit for high speed, high voltage circuitry
US5553070A (en) * 1994-09-13 1996-09-03 Riley; Robert E. Data link module for time division multiplexing control systems
US5532178A (en) * 1995-04-27 1996-07-02 Taiwan Semiconductor Manufacturing Company Gate process for NMOS ESD protection circuits
US5745323A (en) * 1995-06-30 1998-04-28 Analog Devices, Inc. Electrostatic discharge protection circuit for protecting CMOS transistors on integrated circuit processes
JPH09116023A (ja) * 1995-10-16 1997-05-02 Nec Corp 半導体集積回路装置の入力保護回路
US5729419A (en) * 1995-11-20 1998-03-17 Integrated Device Technology, Inc. Changed device model electrostatic discharge protection circuit for output drivers and method of implementing same
US5751525A (en) * 1996-01-05 1998-05-12 Analog Devices, Inc. EOS/ESD Protection circuit for an integrated circuit with operating/test voltages exceeding power supply rail voltages
US5663678A (en) * 1996-02-02 1997-09-02 Vanguard International Semiconductor Corporation ESD protection device
US5917689A (en) * 1996-09-12 1999-06-29 Analog Devices, Inc. General purpose EOS/ESD protection circuit for bipolar-CMOS and CMOS integrated circuits
TW322632B (en) * 1996-10-14 1997-12-11 Vanguard Int Semiconduct Corp Electrostatic discharge protection device for integrated circuit input/output port
US5838146A (en) * 1996-11-12 1998-11-17 Analog Devices, Inc. Method and apparatus for providing ESD/EOS protection for IC power supply pins
DE19709717C1 (de) * 1997-03-10 1998-09-24 Siemens Ag Vorrichtung und Verfahren zum Ansteuern wenigstens eines kapazitiven Stellgliedes
US6624998B2 (en) 2000-01-24 2003-09-23 Medtronic, Inc. Electrostatic discharge protection scheme in low potential drop environments
US6552886B1 (en) 2000-06-29 2003-04-22 Pericom Semiconductor Corp. Active Vcc-to-Vss ESD clamp with hystersis for low supply chips
US6958551B2 (en) * 2002-06-25 2005-10-25 Strattec Security Corporation Vehicle coded ignition lock using a magnetic sensor
AU2002950581A0 (en) * 2002-08-02 2002-09-12 Wayne Callen Electrical safety circuit
US6898061B1 (en) * 2003-07-10 2005-05-24 Polarfab, Llc System and method for dynamic ESD Protection
US7750439B2 (en) * 2005-11-28 2010-07-06 Kabushiki Kaisha Toshiba ESD protection device
US8004807B2 (en) * 2008-01-31 2011-08-23 Agere Systems Inc. Overvoltage protection circuit with reduced sensitivity to process variations
US20100109053A1 (en) * 2008-11-04 2010-05-06 Ching-Han Jan Semiconductor device having integrated circuit with pads coupled by external connecting component and method for modifying integrated circuit

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL261262A (https=) * 1960-02-25 1900-01-01
US3407339A (en) * 1966-05-02 1968-10-22 North American Rockwell Voltage protection device utilizing a field effect transistor
JPS5530312B2 (https=) * 1975-01-16 1980-08-09
JPS5299786A (en) * 1976-02-18 1977-08-22 Agency Of Ind Science & Technol Mos integrated circuit
US4037140A (en) * 1976-04-14 1977-07-19 Rca Corporation Protection circuit for insulated-gate field-effect transistors (IGFETS)
JPS5563871A (en) * 1978-11-06 1980-05-14 Nec Corp Protector for field-effect transistor with insulated gate
US4282556A (en) * 1979-05-21 1981-08-04 Rca Corporation Input protection device for insulated gate field effect transistor
JPS577969A (en) * 1980-06-18 1982-01-16 Toshiba Corp Semiconductor integrated circuit
JPS583285A (ja) * 1981-06-30 1983-01-10 Fujitsu Ltd 半導体集積回路の保護装置
US4527213A (en) * 1981-11-27 1985-07-02 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor integrated circuit device with circuits for protecting an input section against an external surge

Also Published As

Publication number Publication date
EP0173108A2 (en) 1986-03-05
US4692834B1 (https=) 1993-03-02
DE3587654D1 (de) 1993-12-16
US4692834A (en) 1987-09-08
JPS6150358A (ja) 1986-03-12
EP0173108B1 (en) 1993-11-10
EP0173108A3 (en) 1987-07-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition