JPS6149764B2 - - Google Patents
Info
- Publication number
- JPS6149764B2 JPS6149764B2 JP51138528A JP13852876A JPS6149764B2 JP S6149764 B2 JPS6149764 B2 JP S6149764B2 JP 51138528 A JP51138528 A JP 51138528A JP 13852876 A JP13852876 A JP 13852876A JP S6149764 B2 JPS6149764 B2 JP S6149764B2
- Authority
- JP
- Japan
- Prior art keywords
- metal
- coating
- substrate
- source
- grid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 110
- 239000002184 metal Substances 0.000 claims description 110
- 238000000576 coating method Methods 0.000 claims description 71
- 238000001704 evaporation Methods 0.000 claims description 54
- 239000011248 coating agent Substances 0.000 claims description 52
- 230000008020 evaporation Effects 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 46
- 238000000151 deposition Methods 0.000 claims description 39
- 239000001301 oxygen Substances 0.000 claims description 39
- 229910052760 oxygen Inorganic materials 0.000 claims description 39
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 38
- 238000010894 electron beam technology Methods 0.000 claims description 35
- 230000008021 deposition Effects 0.000 claims description 30
- 150000002739 metals Chemical class 0.000 claims description 26
- 239000012298 atmosphere Substances 0.000 claims description 11
- 238000007733 ion plating Methods 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 230000009257 reactivity Effects 0.000 claims description 2
- 238000009877 rendering Methods 0.000 claims 1
- 230000001568 sexual effect Effects 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 description 27
- 239000000956 alloy Substances 0.000 description 27
- 229910052738 indium Inorganic materials 0.000 description 24
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 22
- 229910052718 tin Inorganic materials 0.000 description 20
- 239000000203 mixture Substances 0.000 description 19
- 239000011521 glass Substances 0.000 description 18
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 17
- 238000010438 heat treatment Methods 0.000 description 12
- 239000002245 particle Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 229910052787 antimony Inorganic materials 0.000 description 7
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 7
- 229910052793 cadmium Inorganic materials 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 238000002844 melting Methods 0.000 description 7
- 230000008016 vaporization Effects 0.000 description 7
- 238000011068 loading method Methods 0.000 description 6
- 230000010287 polarization Effects 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 229910003437 indium oxide Inorganic materials 0.000 description 5
- 229910006404 SnO 2 Inorganic materials 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000001883 metal evaporation Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229940071182 stannate Drugs 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000009834 vaporization Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- -1 cadmium stannate Chemical class 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical class [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 2
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 239000012799 electrically-conductive coating Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 210000004905 finger nail Anatomy 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000010405 reoxidation reaction Methods 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/23—Mixtures
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/23—Mixtures
- C03C2217/231—In2O3/SnO2
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/23—Mixtures
- C03C2217/232—CdO/SnO2
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/151—Deposition methods from the vapour phase by vacuum evaporation
Landscapes
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Electric Cables (AREA)
- Laminated Bodies (AREA)
- Surface Treatment Of Glass (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH1501975A CH610013A5 (US08088918-20120103-C00476.png) | 1975-11-19 | 1975-11-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5262678A JPS5262678A (en) | 1977-05-24 |
JPS6149764B2 true JPS6149764B2 (US08088918-20120103-C00476.png) | 1986-10-31 |
Family
ID=4405620
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51138528A Granted JPS5262678A (en) | 1975-11-19 | 1976-11-19 | Method of and apparatus for covering metal oxide on insulating base material |
Country Status (11)
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH631743A5 (de) * | 1977-06-01 | 1982-08-31 | Balzers Hochvakuum | Verfahren zum aufdampfen von material in einer vakuumaufdampfanlage. |
US4349425A (en) * | 1977-09-09 | 1982-09-14 | Hitachi, Ltd. | Transparent conductive films and methods of producing same |
JPS581186B2 (ja) * | 1977-12-13 | 1983-01-10 | 双葉電子工業株式会社 | イオンプレ−テイング装置 |
GB2085482B (en) * | 1980-10-06 | 1985-03-06 | Optical Coating Laboratory Inc | Forming thin film oxide layers using reactive evaporation techniques |
JPS5775414A (en) * | 1980-10-28 | 1982-05-12 | Fuji Photo Film Co Ltd | Manufacture of magneti substance thin film target for sputtering |
JPS5778519A (en) * | 1980-11-05 | 1982-05-17 | Citizen Watch Co Ltd | Production of electrochromic display element |
JPS58197262A (ja) * | 1982-05-13 | 1983-11-16 | Canon Inc | 量産型真空成膜装置及び真空成膜法 |
US4474827A (en) * | 1982-07-08 | 1984-10-02 | Ferralli Michael W | Ion induced thin surface coating |
GB8324779D0 (en) * | 1982-09-29 | 1983-10-19 | Nat Res Dev | Depositing film onto substrate |
US4560577A (en) * | 1984-09-14 | 1985-12-24 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Oxidation protection coatings for polymers |
US4604181A (en) * | 1984-09-14 | 1986-08-05 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Apparatus for producing oxidation protection coatings for polymers |
US4664980A (en) * | 1984-09-14 | 1987-05-12 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Oxidation protection coatings for polymers |
US4620872A (en) * | 1984-10-18 | 1986-11-04 | Mitsubishi Kinzoku Kabushiki Kaisha | Composite target material and process for producing the same |
CH664163A5 (de) * | 1985-03-01 | 1988-02-15 | Balzers Hochvakuum | Verfahren zum reaktiven aufdampfen von schichten aus oxiden, nitriden, oxynitriden und karbiden. |
EP0239664B1 (de) * | 1986-04-04 | 1991-12-18 | Ibm Deutschland Gmbh | Verfahren zum Herstellen von Silicium und Sauerstoff enthaltenden Schichten |
US4719355A (en) * | 1986-04-10 | 1988-01-12 | Texas Instruments Incorporated | Ion source for an ion implanter |
US4888202A (en) * | 1986-07-31 | 1989-12-19 | Nippon Telegraph And Telephone Corporation | Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film |
US4876984A (en) * | 1987-06-12 | 1989-10-31 | Ricoh Company, Ltd. | Apparatus for forming a thin film |
US4970376A (en) * | 1987-12-22 | 1990-11-13 | Gte Products Corporation | Glass transparent heater |
US5008215A (en) * | 1989-07-07 | 1991-04-16 | Industrial Technology Research Institute | Process for preparing high sensitivity semiconductive magnetoresistance element |
US5306408A (en) * | 1992-06-29 | 1994-04-26 | Ism Technologies, Inc. | Method and apparatus for direct ARC plasma deposition of ceramic coatings |
US5792521A (en) * | 1996-04-18 | 1998-08-11 | General Electric Company | Method for forming a multilayer thermal barrier coating |
US6428848B1 (en) * | 1998-08-06 | 2002-08-06 | Toray Industries, Inc. | Method for producing a metal evaporated article |
US6620525B1 (en) | 2000-11-09 | 2003-09-16 | General Electric Company | Thermal barrier coating with improved erosion and impact resistance and process therefor |
US6492038B1 (en) | 2000-11-27 | 2002-12-10 | General Electric Company | Thermally-stabilized thermal barrier coating and process therefor |
US6544665B2 (en) | 2001-01-18 | 2003-04-08 | General Electric Company | Thermally-stabilized thermal barrier coating |
US6617049B2 (en) | 2001-01-18 | 2003-09-09 | General Electric Company | Thermal barrier coating with improved erosion and impact resistance |
US20030034458A1 (en) * | 2001-03-30 | 2003-02-20 | Fuji Photo Film Co., Ltd. | Radiation image storage panel |
US6586115B2 (en) | 2001-04-12 | 2003-07-01 | General Electric Company | Yttria-stabilized zirconia with reduced thermal conductivity |
US7879411B2 (en) * | 2001-04-30 | 2011-02-01 | University Of Virginia Patent Foundation | Method and apparatus for efficient application of substrate coating |
WO2005043580A1 (en) * | 2003-10-31 | 2005-05-12 | Ventracor Limited | Plasma immersion ion implantation using conductive mesh |
US20050229856A1 (en) * | 2004-04-20 | 2005-10-20 | Malik Roger J | Means and method for a liquid metal evaporation source with integral level sensor and external reservoir |
LV13383B (en) * | 2004-05-27 | 2006-02-20 | Sidrabe As | Method and device for vacuum vaporization metals or alloys |
US20100129564A1 (en) * | 2007-04-28 | 2010-05-27 | Enerize Corporation | Method for deposition of electrochemically active thin films and layered coatings |
US20090117289A1 (en) * | 2007-10-09 | 2009-05-07 | Enerize Corporation | Method and apparatus for deposition of thin film materials for energy storage devices |
US8323408B2 (en) * | 2007-12-10 | 2012-12-04 | Solopower, Inc. | Methods and apparatus to provide group VIA materials to reactors for group IBIIIAVIA film formation |
EP2113584A1 (en) * | 2008-04-28 | 2009-11-04 | LightLab Sweden AB | Evaporation system |
DE102010040049A1 (de) * | 2010-08-31 | 2012-03-01 | Von Ardenne Anlagentechnik Gmbh | Elektronenstrahlverdampfungseinrichtung und Verfahren zur Abscheidung von ferromagnetischen Beschichtungsmaterialien auf einem Substrat |
US8735718B2 (en) * | 2010-09-13 | 2014-05-27 | University Of Central Florida | Electrode structure, method and applications |
TWI595110B (zh) * | 2016-06-30 | 2017-08-11 | Jung Tsai Weng | Preparation of Multivariate Alloy Reactive Coating by Vacuum Ion Evaporation |
EP3725911A1 (en) * | 2019-04-16 | 2020-10-21 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Source arrangement, deposition apparatus and method for depositing source material |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US848600A (en) * | 1906-10-04 | 1907-03-26 | Siemens Ag | Production of homogeneous bodies from tantalum or other metals. |
US2784115A (en) * | 1953-05-04 | 1957-03-05 | Eastman Kodak Co | Method of producing titanium dioxide coatings |
US3492152A (en) * | 1967-01-30 | 1970-01-27 | Gen Dynamics Corp | Method of vacuum vapor depositing a material on a substrate including reconstitution of decomposed portions of the material |
US3634647A (en) * | 1967-07-14 | 1972-01-11 | Ernest Brock Dale Jr | Evaporation of multicomponent alloys |
US3562141A (en) * | 1968-02-23 | 1971-02-09 | John R Morley | Vacuum vapor deposition utilizing low voltage electron beam |
US3756193A (en) * | 1972-05-01 | 1973-09-04 | Battelle Memorial Institute | Coating apparatus |
US3912462A (en) * | 1974-01-25 | 1975-10-14 | Westinghouse Electric Corp | Selective dimensional control of fine wire mesh |
-
1975
- 1975-11-19 CH CH1501975A patent/CH610013A5/xx not_active IP Right Cessation
-
1976
- 1976-11-15 US US05/741,783 patent/US4112137A/en not_active Expired - Lifetime
- 1976-11-16 GB GB7647642A patent/GB1542496A/en not_active Expired
- 1976-11-16 CA CA265,743A patent/CA1093910A/fr not_active Expired
- 1976-11-16 FR FR7634464A patent/FR2332338A1/fr active Granted
- 1976-11-17 NL NLAANVRAGE7612749,A patent/NL184792C/xx not_active IP Right Cessation
- 1976-11-17 SE SE7612832A patent/SE420914B/xx not_active IP Right Cessation
- 1976-11-17 IT IT29455/76A patent/IT1121741B/it active
- 1976-11-18 BE BE172490A patent/BE848500A/xx not_active IP Right Cessation
- 1976-11-19 JP JP51138528A patent/JPS5262678A/ja active Granted
- 1976-11-19 DE DE2653242A patent/DE2653242C2/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1542496A (en) | 1979-03-21 |
DE2653242C2 (de) | 1985-12-19 |
SE7612832L (sv) | 1977-05-20 |
BE848500A (fr) | 1977-05-18 |
SE420914B (sv) | 1981-11-09 |
CH610013A5 (US08088918-20120103-C00476.png) | 1979-03-30 |
FR2332338B1 (US08088918-20120103-C00476.png) | 1979-07-13 |
IT1121741B (it) | 1986-04-23 |
US4112137A (en) | 1978-09-05 |
NL184792B (nl) | 1989-06-01 |
FR2332338A1 (fr) | 1977-06-17 |
JPS5262678A (en) | 1977-05-24 |
CA1093910A (fr) | 1981-01-20 |
NL7612749A (nl) | 1977-05-23 |
DE2653242A1 (de) | 1977-06-02 |
NL184792C (nl) | 1989-11-01 |
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