US3912462A - Selective dimensional control of fine wire mesh - Google Patents

Selective dimensional control of fine wire mesh Download PDF

Info

Publication number
US3912462A
US3912462A US436589A US43658974A US3912462A US 3912462 A US3912462 A US 3912462A US 436589 A US436589 A US 436589A US 43658974 A US43658974 A US 43658974A US 3912462 A US3912462 A US 3912462A
Authority
US
United States
Prior art keywords
wire
mesh
electron beam
section
dimension
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US436589A
Inventor
David L Balthis
Frank A Lindberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Priority to US436589A priority Critical patent/US3912462A/en
Application granted granted Critical
Publication of US3912462A publication Critical patent/US3912462A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B21MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21CMANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
    • B21C37/00Manufacture of metal sheets, bars, wire, tubes or like semi-manufactured products, not otherwise provided for; Manufacture of tubes of special shape
    • B21C37/04Manufacture of metal sheets, bars, wire, tubes or like semi-manufactured products, not otherwise provided for; Manufacture of tubes of special shape of bars or wire
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/28Vacuum evaporation by wave energy or particle radiation
    • C23C14/30Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00Stock material or miscellaneous articles
    • Y10S428/922Static electricity metal bleed-off metallic stock
    • Y10S428/923Physical dimension
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00Stock material or miscellaneous articles
    • Y10S428/922Static electricity metal bleed-off metallic stock
    • Y10S428/9335Product by special process
    • Y10S428/938Vapor deposition or gas diffusion
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12431Foil or filament smaller than 6 mils
    • Y10T428/12438Composite
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12444Embodying fibers interengaged or between layers [e.g., paper, etc.]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12639Adjacent, identical composition, components
    • Y10T428/12646Group VIII or IB metal-base
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771Transition metal-base component
    • Y10T428/12806Refractory [Group IVB, VB, or VIB] metal-base component
    • Y10T428/12819Group VB metal-base component
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771Transition metal-base component
    • Y10T428/12861Group VIII or IB metal-base component
    • Y10T428/12944Ni-base component

Definitions

  • the present invention can be best understood by ref- The present invention relates to the manufacture of 5 rence t0 the exemplary embodiments shown in the fine conductive wire and of providing such wire with an elongated generally rectangular cross-section.
  • Fine conductive wire, and more particularly meshes constructed of such fine wire are used as grids in electronic vidicon camera tubes, electron storage tubes, and other such electron devices.
  • fine mesh is meant a mesh wherein the wire dimension is between about 0.1 mil. to several mils in diameter.
  • Such fine mesh is typically formed from a thin plate-like member which has a plurality of symmetrical apertures through the member. Such apertures can be provided by forming the member by an electroplating process, or by a etching process.
  • the transmission area of the mesh that is the percentage of open area, can vary from for example about 20 to 90% transmission, with the number of wires varying for example from about 50 to 2,000 wires per inch.
  • Such mesh is very fragile and requires very careful handling in order to avoid tearing or stretching.
  • Such mesh is also subjected to significant electrical stress due to the high electrical fields in an operating device which can tend to deform the mesh.
  • a present method of increasing the mechanical strength of such fine wire meshes is to increase the cross-sectional area of the wires of the mesh.
  • Such meshes are usually formed by an etching or electro-forming or plating process. All such prior art techniques increase the wire cross-section uniformly so that the resultant wire remains substantially uniform in cross-section with the width equal to the thickness, and this results in a reduction in mesh transmission. This reduction in mesh transmission is undesirable and limits usage of the wire, or limits the increase in cross-sectional area for a given application.
  • a method of producing fine wire or wire mesh in which the wire has an elongated, generally rectangular cross-section is detailed.
  • An initially uniform crosssection wire is unidirectionally built up by an electron beam evaporation process to significantly strengthen the wire or mesh without reducing the transmission of the formed mesh.
  • the electron beam evaporation chamber is maintained at below about 8 X 10' Torr to insure that a substantially unidirectional build-up occurs.
  • fine wire or mesh of selected conductive material which has an elongated generally oval cross-section.
  • the wire typically has an approximate dimension of from 0.1 to 1 mil, in a first direction, and a dimension in a second direction normal to the first direction which exceeds the first direction dimension by greater than about a 2 to 1 ratio.
  • FIG. 1 is a schematical representation of a system for practicing the present invention.
  • FIG. 2 is an enlarged side elevational view of a fine wire mesh of the present invention.
  • FIG. 3 is a sectional view taken along lines IIIIII of FIG. 2.
  • FIG. 1 an electron beam evaporation chamber 10 is schematically represented.
  • the electron beam evaporation chamber 10 is connected by an inlet manifold 12 via valve 14 to a high vacuum system 16 which permits evacuation of the chamber 10 and maintenance of the chamber 10 at a relatively low pressure of below about 8 X 10" Torr and preferably about 10* Torr.
  • a four pocket water cooled copper crucible 18 is disposed within the chamber 10 and is incorporated with the electron beam source 22.
  • the electron beam source 22 is connected by high voltage input line 24 to an externally disposed high voltage power supply 26.
  • the electron beam is focused and deflected through a 270 deflection angle by magnetic focusing and deflection coils, which are not shown.
  • Such electron beam evaporation systems are well known and are commercially available from Airco Temescal Company of Berkeley, California.
  • the electron beam is focused onto the surface of the conductive metal 28 which is disposed within the proper pocket of the multiple crucible 18.
  • the evaporable metal 28 is typically nickel which is supplied as evaporation grade or 99.999% purity nickel shot, which has an average diameter of from about one-eighth to one-quarter inch.
  • the metal pieces melt and flow together to form one large slug in the crucible when heated by the electron beam.
  • a thin shell or skull of metal in contact with the water cooled crucible remains frozen or solid.
  • the generally planar fine mesh 30, seen in FIG. 2 in greater detail, is disposed within chamber 10 above the crucible 18 and spaced therefrom by a distance of about 6 to 8 inches.
  • the planar mesh is disposed in a plane perpendicular to a line normal to the crucible.
  • the fine mesh is supported above the crucible by means 32.
  • An infrared heater means 34 is provided within the chamber 10 disposed above the mesh 30 and spaced therefrom, by for example about 4 inches. The heater 34 is connected to an appropriate power supply disposed outside of the chamber 10.
  • the fine mesh 30 is by way of example a generally planar member which is about 0.16 mils thick and has a plurality of apertures therethrough, so that the structural grids are spaced at about 500 grids per inch.
  • the chamber 10 is evacuated to a low pressure of about 10 Torr and the valve 14 is open during the evaporation process.
  • the infrared heaters are operated at a power input of about 1,500 watts for about 45 minutes prior to the evaporation to heat the mesh 30 to promote adherence of the later deposited material thereon.
  • the electron beam is thereafter initiated, typically at about 5 to 10 kilowatts electron beam power, to heat and evaporate the nickel disposed within the crucible 18.
  • the evaporated nickel will be deposited upon the mesh disposed above the crucible 18 and more particularly upon the mesh surface facing the crucible.
  • the evaporated metal will be unidirectionally deposited upon the exposed surface of the planar mesh, and a significant build up in this direction will occur.
  • the metal deposited in this manner builds up thickness in the direction of the source of the material without a corresponding increase in width of the deposited material or of the mesh. In this way, the thickness of the mesh can be selectively increased without significantly reducing the mesh transmission.
  • the resultant dimension along the direction of build up for the wire described above is to provide a wire which is about 1.6 mils thick. This provides a significant increase in the dimension of the wire in the direction of deposition. There is a slight increase in the width of the wire in the direction normal to the thickness build up, but this is typically of the order of about a increase in the width. This relatively small increase in the width of the wire of the mesh thus minimizes the reduction in transmission of the mesh.
  • the thickness of the resultant wire exceeds the width by about a 10 to 1 ratio.
  • the wire described above as nickel can be other conductive metals such as copper, aluminum, gold, titanium, and similar conductive elements and alloys.
  • the evaporable metal may be the same metal as the wire substrate or can be another compatible metal.
  • the evaporable metal may by way of example be gold, nickel, tantalum, or silver.
  • a nickel wire substrate it is desirable to first electron beam evaporate and deposit a tantalum layer of about 1000 Angstroms thickness, again upon the surface of the wire or mesh exposed to or facing the crucible.
  • a plurality of crucibles are provided within the chamber in practicing this embodiment. The crucibles are movable into the position indicated in FIG. 1 where the electron beam is focused onto the metal surface within the crucible. The evaporated tantalum will deposit on the nickel substrate and actually tend to embed itself in the nickel wire surface. The nickel containing crucible is then moved to the beam focus point to permit evaporation and deposition of nickel onto the freshly deposited tantalum.
  • the rate of deposition of the metal upon the wire mesh is a function of the electron beam power input and for example for nickel with an electron beam power input of SKW approximately 1.5 mils. is deposited in about 10 minutes.
  • the thickness of metal deposited is observed by means ofa crystal monitor. The sensor of which is disposed within the chamber so that as the metal is deposited upon the crystal surface the resonant frequency of the crystal changes as a function of the metal thickness. The thickness of the film is shown on a digital display.
  • the wire or mesh substrate may be an insulator as well as being a conductive substrate.
  • the deposited material may be other than a conductive metal.
  • the basis for producing the unidirectional build-up will work with any material that is evaporable at the low chamber pressure of less than about 8 X 10 Torr.
  • the structural members provided by the present invention have improved mechanical rigidity which broadens their application in electronic devices.
  • Method of producing fine wire having an elongated generally rectangular cross-section, which wire has a cross-section which in a first direction is of a predetermined dimension, and in a second direction normal to the first direction has a significantly greater dimension which method comprises:
  • the wire is preferably nickel of from 0.1 to 1 mil thick, and a first tantalum layer is electron beam evaporated and deposited thereon, after which nickel is electron beam evaporated and deposited on the tantalum.
  • the wire comprises a fine mesh, with the wire thickness being between 0.1 to 1 mil, and the mesh has up to about 2000 wires per inch.
  • Fine wire of selected conductive material having an elongated generally rectangular cross-section produced by the method of:
  • Method of producing a generally planar fine conductive mesh which has a generally rectangular crosssection, with the cross-section dimension in the direction normal to the plane of the mesh being substantially greater than the other cross-section dimension comprises;

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A method of selectively increasing or building up the thickness of a fine wire or wire mesh by means of an electron beam evaporation and deposition process. The resultant fine wire has a generally elongated rectangular cross-section. The crosssectional dimension of the resultant fine wire or mesh along the major axis substantially exceeds the dimension along the minor axis.

Description

United States Patent [191 Balthis et a1.
[4 1 Oct. 14, 1975 SELECTIVE DIMENSIONAL CONTROL OF FINE WIRE MESH [75] Inventors: David L. Balthis, Ellicott City;
Frank A. Lindberg, Baltimore, both of Md.
[73] Assignee: Westinghouse Electric Corporation,
Pittsburgh, Pa.
22 Filed: Jan. 25, 1974 21 Appl. No.: 436,589
[52] US. Cl. 29/l 9l.6; 29/198; 427/42; 427/118; 427/120; 427/124; 427/247 [51] Int. Cl. B21C 37/04; B23? 3/10 [58] Field of Search 117/227, 231, 107, 128, 117/106 R, 93.3; 29/1935, 191.6, 198
[56] References Cited UNITED STATES PATENTS 3,655,428 4/1972 Bragard l17/93.3 X
3,779,802 12/1973 Streel 117/107X Primary Examiner-Mayer Weinblatt Attorney, Agent, or FirmW. G. Sutcliff ABSTRACT A method of selectively increasing or building up the thickness of a fine wire or wire mesh by means of an electron beam evaporation and deposition process. The resultant fine wire has a generally elongated rectangular cross-section. The cross-sectional dimension of the resultant fine wire or mesh along the major axis substantially exceeds the dimension along the minor axis.
11 Claims, 3 Drawing Figures US. Patent 00. 14, 1975 POWER SUPPLY 26 BACKGROUND OF THE INVENTION DESCRIPTION OF THE PREFERRED EMBODIMENT The present invention can be best understood by ref- The present invention relates to the manufacture of 5 rence t0 the exemplary embodiments shown in the fine conductive wire and of providing such wire with an elongated generally rectangular cross-section. Fine conductive wire, and more particularly meshes constructed of such fine wire, are used as grids in electronic vidicon camera tubes, electron storage tubes, and other such electron devices. By fine mesh is meant a mesh wherein the wire dimension is between about 0.1 mil. to several mils in diameter. Such fine mesh is typically formed from a thin plate-like member which has a plurality of symmetrical apertures through the member. Such apertures can be provided by forming the member by an electroplating process, or by a etching process. The transmission area of the mesh, that is the percentage of open area, can vary from for example about 20 to 90% transmission, with the number of wires varying for example from about 50 to 2,000 wires per inch. Such mesh is very fragile and requires very careful handling in order to avoid tearing or stretching. Such mesh is also subjected to significant electrical stress due to the high electrical fields in an operating device which can tend to deform the mesh. A present method of increasing the mechanical strength of such fine wire meshes is to increase the cross-sectional area of the wires of the mesh. Such meshes are usually formed by an etching or electro-forming or plating process. All such prior art techniques increase the wire cross-section uniformly so that the resultant wire remains substantially uniform in cross-section with the width equal to the thickness, and this results in a reduction in mesh transmission. This reduction in mesh transmission is undesirable and limits usage of the wire, or limits the increase in cross-sectional area for a given application.
SUMMARY OF THE PRESENT INVENTION A method of producing fine wire or wire mesh in which the wire has an elongated, generally rectangular cross-section is detailed. An initially uniform crosssection wire is unidirectionally built up by an electron beam evaporation process to significantly strengthen the wire or mesh without reducing the transmission of the formed mesh. The electron beam evaporation chamber is maintained at below about 8 X 10' Torr to insure that a substantially unidirectional build-up occurs.
In this way fine wire or mesh of selected conductive material can be provided which has an elongated generally oval cross-section. The wire typically has an approximate dimension of from 0.1 to 1 mil, in a first direction, and a dimension in a second direction normal to the first direction which exceeds the first direction dimension by greater than about a 2 to 1 ratio.
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematical representation of a system for practicing the present invention.
FIG. 2 is an enlarged side elevational view of a fine wire mesh of the present invention.
FIG. 3 is a sectional view taken along lines IIIIII of FIG. 2.
drawings. In FIG. 1, an electron beam evaporation chamber 10 is schematically represented. The electron beam evaporation chamber 10 is connected by an inlet manifold 12 via valve 14 to a high vacuum system 16 which permits evacuation of the chamber 10 and maintenance of the chamber 10 at a relatively low pressure of below about 8 X 10" Torr and preferably about 10* Torr.
A four pocket water cooled copper crucible 18 is disposed within the chamber 10 and is incorporated with the electron beam source 22. The electron beam source 22 is connected by high voltage input line 24 to an externally disposed high voltage power supply 26. The electron beam is focused and deflected through a 270 deflection angle by magnetic focusing and deflection coils, which are not shown. Such electron beam evaporation systems are well known and are commercially available from Airco Temescal Company of Berkeley, California. The electron beam is focused onto the surface of the conductive metal 28 which is disposed within the proper pocket of the multiple crucible 18. The evaporable metal 28 is typically nickel which is supplied as evaporation grade or 99.999% purity nickel shot, which has an average diameter of from about one-eighth to one-quarter inch. The metal pieces melt and flow together to form one large slug in the crucible when heated by the electron beam. A thin shell or skull of metal in contact with the water cooled crucible remains frozen or solid.
The generally planar fine mesh 30, seen in FIG. 2 in greater detail, is disposed within chamber 10 above the crucible 18 and spaced therefrom by a distance of about 6 to 8 inches. The planar mesh is disposed in a plane perpendicular to a line normal to the crucible. The fine mesh is supported above the crucible by means 32. An infrared heater means 34 is provided within the chamber 10 disposed above the mesh 30 and spaced therefrom, by for example about 4 inches. The heater 34 is connected to an appropriate power supply disposed outside of the chamber 10.
The fine mesh 30 is by way of example a generally planar member which is about 0.16 mils thick and has a plurality of apertures therethrough, so that the structural grids are spaced at about 500 grids per inch.
In practicing the present invention the chamber 10 is evacuated to a low pressure of about 10 Torr and the valve 14 is open during the evaporation process. The infrared heaters are operated at a power input of about 1,500 watts for about 45 minutes prior to the evaporation to heat the mesh 30 to promote adherence of the later deposited material thereon. The electron beam is thereafter initiated, typically at about 5 to 10 kilowatts electron beam power, to heat and evaporate the nickel disposed within the crucible 18. The evaporated nickel will be deposited upon the mesh disposed above the crucible 18 and more particularly upon the mesh surface facing the crucible. The evaporated metalwill be unidirectionally deposited upon the exposed surface of the planar mesh, and a significant build up in this direction will occur. The metal deposited in this manner builds up thickness in the direction of the source of the material without a corresponding increase in width of the deposited material or of the mesh. In this way, the thickness of the mesh can be selectively increased without significantly reducing the mesh transmission. The resultant dimension along the direction of build up for the wire described above is to provide a wire which is about 1.6 mils thick. This provides a significant increase in the dimension of the wire in the direction of deposition. There is a slight increase in the width of the wire in the direction normal to the thickness build up, but this is typically of the order of about a increase in the width. This relatively small increase in the width of the wire of the mesh thus minimizes the reduction in transmission of the mesh. The thickness of the resultant wire exceeds the width by about a 10 to 1 ratio.
The wire described above as nickel can be other conductive metals such as copper, aluminum, gold, titanium, and similar conductive elements and alloys. The evaporable metal may be the same metal as the wire substrate or can be another compatible metal. Thus the evaporable metal may by way of example be gold, nickel, tantalum, or silver.
It is sometimes desirable in depositing a selected metal upon the wire substrate to first deposit a thin layer of an adherence promoting metal. For a nickel wire substrate, it is desirable to first electron beam evaporate and deposit a tantalum layer of about 1000 Angstroms thickness, again upon the surface of the wire or mesh exposed to or facing the crucible. A plurality of crucibles are provided within the chamber in practicing this embodiment. The crucibles are movable into the position indicated in FIG. 1 where the electron beam is focused onto the metal surface within the crucible. The evaporated tantalum will deposit on the nickel substrate and actually tend to embed itself in the nickel wire surface. The nickel containing crucible is then moved to the beam focus point to permit evaporation and deposition of nickel onto the freshly deposited tantalum. The rate of deposition of the metal upon the wire mesh is a function of the electron beam power input and for example for nickel with an electron beam power input of SKW approximately 1.5 mils. is deposited in about 10 minutes. The thickness of metal deposited is observed by means ofa crystal monitor. The sensor of which is disposed within the chamber so that as the metal is deposited upon the crystal surface the resonant frequency of the crystal changes as a function of the metal thickness. The thickness of the film is shown on a digital display.
It should be apparent that the wire or mesh substrate may be an insulator as well as being a conductive substrate. 1n the same way, the deposited material may be other than a conductive metal. The basis for producing the unidirectional build-up will work with any material that is evaporable at the low chamber pressure of less than about 8 X 10 Torr.
The structural members provided by the present invention have improved mechanical rigidity which broadens their application in electronic devices.
We claim:
1. Method of producing fine wire having an elongated generally rectangular cross-section, which wire has a cross-section which in a first direction is of a predetermined dimension, and in a second direction normal to the first direction has a significantly greater dimension, which method comprises:
a. disposing a wire within an evacuated chamber which is maintained at less than about 8 X 10 Torr pressure, with the wire disposed above an evaporable source of material disposed within said chamber;
b. heating said wire to promote adherence of the later deposited material;
c. directing an electron beam onto said source of material to evaporate said material and deposit said material upon the heated wire surface exposed to the source of material so that the dimension in the direction normal to the surface exposed to said material source is increased.
2. The method specified in claim 1, wherein said wire comprises a generally planar fine wire mesh.
3. The method specified in claim 1, wherein the wire is preferably nickel of from 0.1 to 1 mil thick, and a first tantalum layer is electron beam evaporated and deposited thereon, after which nickel is electron beam evaporated and deposited on the tantalum.
4. The method specified in claim 3, wherein the fine wire is initially approximately from 0.1 to 1 mil in thickness and the deposition increase is substantially only in the wire thickness.
5. The method specified in claim 1 wherein successive layers of different material are sequentially evaporated by electron beam heating and deposited upon the heated wire surface.
6. The method specified in claim 5, wherein for a nickel wire starting material, tantalum is first evaporated and deposited upon the nickel wire, and thereafter nickel is evaporated and deposited atop the tantalum.
7. The method specified in claim 1 wherein the electron beam power is up to about 10,000 watts.
,8. The method specified in claim 1, wherein the wire is heated at a power input of about 500-1500 watts for about 45 minutes prior to the electron beam evaporation deposition process.
9. The method specified in claim 1 wherein the wire comprises a fine mesh, with the wire thickness being between 0.1 to 1 mil, and the mesh has up to about 2000 wires per inch.
10. Fine wire of selected conductive material having an elongated generally rectangular cross-section produced by the method of:
a. disposing a uniform cross-section wire mesh within an evacuated chamber which is maintained at less than about 8 X 10 Torr pressure, with the wire mesh being disposed above an evaporable source of material disposed within said chamber;
b. heating said wire mesh to promote adherence of the later deposited material;
0. directing an electron beam onto said source of material to evaporate said material and deposit said material upon the heated wire surface exposed to the source of material so that the wire dimension in the direction normal to the surface exposed to said material source is increased.
11. Method of producing a generally planar fine conductive mesh which has a generally rectangular crosssection, with the cross-section dimension in the direction normal to the plane of the mesh being substantially greater than the other cross-section dimension, which method comprises;
a. disposing a uniform cross-section conductive mesh within an evacuated chamber which is maintained at less than about 8 10 Torr pressure, with the mesh disposed in a plane generally normal to the posed to the evaporated compatible conductive metal, so that the mesh cross-section dimension in the direction normal to the exposed surface and the plane of the mesh is increased, while the mesh cross-section dimension in the other direction is substantially unchanged.

Claims (11)

1. METHOD OF PRODUCING FINE WIRE HAVING AN ELONGATED GENERALLY RECTANGULAR CROSS-SECTION, WHICH WIRE HAS A CROSS-SECTION WHICH IN A FIRST DIRECTION IS OF A PREDETERMINED DIMENSION, AND IN A SECOND DIRECTION NORMAL TO THE FIRST DIRECTION HAS A SIGNIFICANTLY GREATER DIMENSION, WHICH METHOD COMPRISES: A. DISPOSING A WIRE WITHIN AN EVACUATED CHAMBER WHICH IS MAINTAINED AT LESS THAN ABOUT 8X10**-6 TORR PRESSURE, WITH THE WIRE DISPOSED ABOVE AN EVAPORABLE SOURCE OF MATERIAL DISPOSED WITHIN SAID CHAMBER, B. HEATING SAID WIRE TO PROMOTE ADHERENCE OF THE LATER DEPOSITED MATERIAL, C. DIRECTING AN ELECTRON BEAM ONTO SAID SOURCE OF MATERIAL TO EVAPORATE SAID MATERIAL AND DEPOSIT SAID MATERIAL UPON THE HEATED WIRE SURFACE EXPOSED TO THE SOURCE OF MATERIAL SO THAT THE DIMENSION IN THE DIRECTION NORMAL TO THE SURFACE EXPOSED TO SAID MATERIAL SOURCE IS INCREASED.
2. The method specified in claim 1, wherein said wire comprises a generally planar fine wire mesh.
3. The method specified in claim 1, wherein the wire is preferably nickel of from 0.1 to 1 mil thick, and a first tantalum layer is electron beam evaporated and deposited thereon, after which nickel is electron beam evaporated and deposited on the tantalum.
4. The method specifieD in claim 3, wherein the fine wire is initially approximately from 0.1 to 1 mil in thickness and the deposition increase is substantially only in the wire thickness.
5. The method specified in claim 1 wherein successive layers of different material are sequentially evaporated by electron beam heating and deposited upon the heated wire surface.
6. The method specified in claim 5, wherein for a nickel wire starting material, tantalum is first evaporated and deposited upon the nickel wire, and thereafter nickel is evaporated and deposited atop the tantalum.
7. The method specified in claim 1 wherein the electron beam power is up to about 10,000 watts.
8. The method specified in claim 1, wherein the wire is heated at a power input of about 500-1500 watts for about 45 minutes prior to the electron beam evaporation deposition process.
9. The method specified in claim 1 wherein the wire comprises a fine mesh, with the wire thickness being between 0.1 to 1 mil, and the mesh has up to about 2000 wires per inch.
10. Fine wire of selected conductive material having an elongated generally rectangular cross-section produced by the method of: a. disposing a uniform cross-section wire mesh within an evacuated chamber which is maintained at less than about 8 X 10 6 Torr pressure, with the wire mesh being disposed above an evaporable source of material disposed within said chamber; b. heating said wire mesh to promote adherence of the later deposited material; c. directing an electron beam onto said source of material to evaporate said material and deposit said material upon the heated wire surface exposed to the source of material so that the wire dimension in the direction normal to the surface exposed to said material source is increased.
11. Method of producing a generally planar fine conductive mesh which has a generally rectangular cross-section, with the cross-section dimension in the direction normal to the plane of the mesh being substantially greater than the other cross-section dimension, which method comprises; a. disposing a uniform cross-section conductive mesh within an evacuated chamber which is maintained at less than about 8 X 10 6 Torr pressure, with the mesh disposed in a plane generally normal to the path between the mesh and an evaporable compatible conductive metal; b. heating the mesh to promote adherence of the later deposited compatible conductive metal; c. directing an electron beam onto the compatible conductive metal to evaporate same, and thereby deposit same, upon the heated mesh surface exposed to the evaporated compatible conductive metal, so that the mesh cross-section dimension in the direction normal to the exposed surface and the plane of the mesh is increased, while the mesh cross-section dimension in the other direction is substantially unchanged.
US436589A 1974-01-25 1974-01-25 Selective dimensional control of fine wire mesh Expired - Lifetime US3912462A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US436589A US3912462A (en) 1974-01-25 1974-01-25 Selective dimensional control of fine wire mesh

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US436589A US3912462A (en) 1974-01-25 1974-01-25 Selective dimensional control of fine wire mesh

Publications (1)

Publication Number Publication Date
US3912462A true US3912462A (en) 1975-10-14

Family

ID=23733036

Family Applications (1)

Application Number Title Priority Date Filing Date
US436589A Expired - Lifetime US3912462A (en) 1974-01-25 1974-01-25 Selective dimensional control of fine wire mesh

Country Status (1)

Country Link
US (1) US3912462A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3962485A (en) * 1975-10-20 1976-06-08 The United States Of America As Represented By The Secretary Of The Navy Method for forming uniform stress-free thin films
US4112137A (en) * 1975-11-19 1978-09-05 Battelle Memorial Institute Process for coating insulating substrates by reactive ion plating
US4614690A (en) * 1984-04-20 1986-09-30 Ube Industries, Ltd. Inorganic fiber-reinforced metallic composite material

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3655428A (en) * 1969-01-02 1972-04-11 Centre Nat Rech Metall Coating metallic materials
US3779802A (en) * 1970-06-24 1973-12-18 Cockerill Ougree Providence Es Process for the manufacture of a welding wire, and welding wire

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3655428A (en) * 1969-01-02 1972-04-11 Centre Nat Rech Metall Coating metallic materials
US3779802A (en) * 1970-06-24 1973-12-18 Cockerill Ougree Providence Es Process for the manufacture of a welding wire, and welding wire

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3962485A (en) * 1975-10-20 1976-06-08 The United States Of America As Represented By The Secretary Of The Navy Method for forming uniform stress-free thin films
US4112137A (en) * 1975-11-19 1978-09-05 Battelle Memorial Institute Process for coating insulating substrates by reactive ion plating
US4614690A (en) * 1984-04-20 1986-09-30 Ube Industries, Ltd. Inorganic fiber-reinforced metallic composite material

Similar Documents

Publication Publication Date Title
US4842704A (en) Magnetron deposition of ceramic oxide-superconductor thin films
US5317006A (en) Cylindrical magnetron sputtering system
US4960753A (en) Magnetron deposition of ceramic oxide-superconductor thin films
US4606802A (en) Planar magnetron sputtering with modified field configuration
JPS58158944A (en) Semiconductor device
US2724663A (en) Plural metal vapor coating
US3161946A (en) permalloy
US5133849A (en) Thin film forming apparatus
KR20140015367A (en) Diffusion-bonded sputtering target assembly and method of manufacturing
JPS5919190B2 (en) Manufacturing method of lead film
US3912462A (en) Selective dimensional control of fine wire mesh
EP0285999B2 (en) A production method of superconductive thin film and a device thereof
JPS63137159A (en) Formation of thin crystalline metallic film
US3463715A (en) Method of cathodically sputtering a layer of silicon having a reduced resistivity
US3612822A (en) Evaporation filament assembly
US3616404A (en) Computer information storage device and method for making the same
US20230100972A1 (en) Method for producing a coating of a base body and functional element having a base body with a coating
JP3785581B2 (en) Method for producing magnetostrictive thin film
JPH062939B2 (en) Thin film generation method
US3822146A (en) Application of electrically conductive coatings to insulating tubes of switching magnets for particle accelerators
JPS6350473A (en) Continuous multistage ion plating device
JPH0317254A (en) Method and device for producing oxide thin film
Herklotz et al. Technological advances in physical vapor deposition
JPS5835337B2 (en) Niji Denshi Housiya Sou Oyuusuru Denkiyoku
JP3542378B2 (en) Manufacturing method of oxide superconducting wire