JPS6149416A - 多結晶シリコンウエハ製造用カ−ボン皿のコ−テイング方法 - Google Patents
多結晶シリコンウエハ製造用カ−ボン皿のコ−テイング方法Info
- Publication number
- JPS6149416A JPS6149416A JP17133284A JP17133284A JPS6149416A JP S6149416 A JPS6149416 A JP S6149416A JP 17133284 A JP17133284 A JP 17133284A JP 17133284 A JP17133284 A JP 17133284A JP S6149416 A JPS6149416 A JP S6149416A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- polycrystalline silicon
- carbon
- sic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 29
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 29
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000000576 coating method Methods 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000011248 coating agent Substances 0.000 claims abstract description 12
- 239000012298 atmosphere Substances 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 235000012431 wafers Nutrition 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 10
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 238000007738 vacuum evaporation Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 6
- 239000000126 substance Substances 0.000 abstract description 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- 238000000926 separation method Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 25
- 238000007796 conventional method Methods 0.000 description 5
- 239000000155 melt Substances 0.000 description 5
- 238000005266 casting Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- FHTQCUNSKSWOHF-UHFFFAOYSA-N ethyl carbamate;silicon Chemical compound [Si].CCOC(N)=O FHTQCUNSKSWOHF-UHFFFAOYSA-N 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Photovoltaic Devices (AREA)
- Recrystallisation Techniques (AREA)
- Silicon Compounds (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17133284A JPS6149416A (ja) | 1984-08-17 | 1984-08-17 | 多結晶シリコンウエハ製造用カ−ボン皿のコ−テイング方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17133284A JPS6149416A (ja) | 1984-08-17 | 1984-08-17 | 多結晶シリコンウエハ製造用カ−ボン皿のコ−テイング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6149416A true JPS6149416A (ja) | 1986-03-11 |
| JPH038579B2 JPH038579B2 (enrdf_load_stackoverflow) | 1991-02-06 |
Family
ID=15921265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17133284A Granted JPS6149416A (ja) | 1984-08-17 | 1984-08-17 | 多結晶シリコンウエハ製造用カ−ボン皿のコ−テイング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6149416A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6200388B1 (en) * | 1998-02-11 | 2001-03-13 | Applied Materials, Inc. | Substrate support for a thermal processing chamber |
| CN103978746A (zh) * | 2014-05-06 | 2014-08-13 | 上海天马有机发光显示技术有限公司 | 一种膜及其制备方法、显示面板及显示装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57134235A (en) * | 1981-02-10 | 1982-08-19 | Agency Of Ind Science & Technol | Production of polycrystalline silicon semiconductor |
| JPS5820712A (ja) * | 1981-07-28 | 1983-02-07 | Agency Of Ind Science & Technol | 多結晶シリコン半導体の製造方法 |
| JPS5826019A (ja) * | 1981-08-06 | 1983-02-16 | Agency Of Ind Science & Technol | 多結晶シリコンインゴットの鋳造法 |
-
1984
- 1984-08-17 JP JP17133284A patent/JPS6149416A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57134235A (en) * | 1981-02-10 | 1982-08-19 | Agency Of Ind Science & Technol | Production of polycrystalline silicon semiconductor |
| JPS5820712A (ja) * | 1981-07-28 | 1983-02-07 | Agency Of Ind Science & Technol | 多結晶シリコン半導体の製造方法 |
| JPS5826019A (ja) * | 1981-08-06 | 1983-02-16 | Agency Of Ind Science & Technol | 多結晶シリコンインゴットの鋳造法 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6200388B1 (en) * | 1998-02-11 | 2001-03-13 | Applied Materials, Inc. | Substrate support for a thermal processing chamber |
| CN103978746A (zh) * | 2014-05-06 | 2014-08-13 | 上海天马有机发光显示技术有限公司 | 一种膜及其制备方法、显示面板及显示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH038579B2 (enrdf_load_stackoverflow) | 1991-02-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |