JPS6145864B2 - - Google Patents
Info
- Publication number
- JPS6145864B2 JPS6145864B2 JP6556277A JP6556277A JPS6145864B2 JP S6145864 B2 JPS6145864 B2 JP S6145864B2 JP 6556277 A JP6556277 A JP 6556277A JP 6556277 A JP6556277 A JP 6556277A JP S6145864 B2 JPS6145864 B2 JP S6145864B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- oxide film
- emitter
- heat
- ujt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000012535 impurity Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000011261 inert gas Substances 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 description 12
- 238000005530 etching Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6556277A JPS54888A (en) | 1977-06-03 | 1977-06-03 | Manufacture of unijunction transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6556277A JPS54888A (en) | 1977-06-03 | 1977-06-03 | Manufacture of unijunction transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54888A JPS54888A (en) | 1979-01-06 |
| JPS6145864B2 true JPS6145864B2 (enExample) | 1986-10-09 |
Family
ID=13290569
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6556277A Granted JPS54888A (en) | 1977-06-03 | 1977-06-03 | Manufacture of unijunction transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54888A (enExample) |
-
1977
- 1977-06-03 JP JP6556277A patent/JPS54888A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54888A (en) | 1979-01-06 |
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