JPS6145391B2 - - Google Patents
Info
- Publication number
- JPS6145391B2 JPS6145391B2 JP52002255A JP225577A JPS6145391B2 JP S6145391 B2 JPS6145391 B2 JP S6145391B2 JP 52002255 A JP52002255 A JP 52002255A JP 225577 A JP225577 A JP 225577A JP S6145391 B2 JPS6145391 B2 JP S6145391B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor region
- semiconductor
- region
- conductivity type
- crystal layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 137
- 239000013078 crystal Substances 0.000 claims description 30
- 239000012535 impurity Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims 1
- 238000000034 method Methods 0.000 description 8
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Landscapes
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP225577A JPS5387678A (en) | 1977-01-12 | 1977-01-12 | Integrated semicondu ctor circuit device having transistors |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP225577A JPS5387678A (en) | 1977-01-12 | 1977-01-12 | Integrated semicondu ctor circuit device having transistors |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59086719A Division JPS59229859A (ja) | 1984-04-28 | 1984-04-28 | 複数電極トランジスタを有する集積化半導体回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5387678A JPS5387678A (en) | 1978-08-02 |
JPS6145391B2 true JPS6145391B2 (enrdf_load_stackoverflow) | 1986-10-07 |
Family
ID=11524243
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP225577A Granted JPS5387678A (en) | 1977-01-12 | 1977-01-12 | Integrated semicondu ctor circuit device having transistors |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5387678A (enrdf_load_stackoverflow) |
-
1977
- 1977-01-12 JP JP225577A patent/JPS5387678A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5387678A (en) | 1978-08-02 |