JPS6145319B2 - - Google Patents

Info

Publication number
JPS6145319B2
JPS6145319B2 JP3635081A JP3635081A JPS6145319B2 JP S6145319 B2 JPS6145319 B2 JP S6145319B2 JP 3635081 A JP3635081 A JP 3635081A JP 3635081 A JP3635081 A JP 3635081A JP S6145319 B2 JPS6145319 B2 JP S6145319B2
Authority
JP
Japan
Prior art keywords
memory cell
transistor
potential
generation circuit
threshold voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3635081A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57152585A (en
Inventor
Hiroshi Iwahashi
Masamichi Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP3635081A priority Critical patent/JPS57152585A/ja
Priority to GB8136789A priority patent/GB2089612B/en
Priority to US06/329,059 priority patent/US4467457A/en
Priority to DE19813148806 priority patent/DE3148806A1/de
Publication of JPS57152585A publication Critical patent/JPS57152585A/ja
Publication of JPS6145319B2 publication Critical patent/JPS6145319B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Static Random-Access Memory (AREA)
JP3635081A 1980-12-12 1981-03-13 Nonvolatile semiconductor memory Granted JPS57152585A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP3635081A JPS57152585A (en) 1981-03-13 1981-03-13 Nonvolatile semiconductor memory
GB8136789A GB2089612B (en) 1980-12-12 1981-12-07 Nonvolatile semiconductor memory device
US06/329,059 US4467457A (en) 1980-12-12 1981-12-09 Nonvolatile semiconductor memory device
DE19813148806 DE3148806A1 (de) 1980-12-12 1981-12-10 Nicht-fluechtiger halbleiterspeicher

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3635081A JPS57152585A (en) 1981-03-13 1981-03-13 Nonvolatile semiconductor memory

Publications (2)

Publication Number Publication Date
JPS57152585A JPS57152585A (en) 1982-09-20
JPS6145319B2 true JPS6145319B2 (enrdf_load_stackoverflow) 1986-10-07

Family

ID=12467384

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3635081A Granted JPS57152585A (en) 1980-12-12 1981-03-13 Nonvolatile semiconductor memory

Country Status (1)

Country Link
JP (1) JPS57152585A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006286180A (ja) * 2005-03-30 2006-10-19 Ovonyx Inc メモリを読み出すためのビット特定基準レベルの使用

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5998394A (ja) * 1982-11-26 1984-06-06 Hitachi Ltd 半導体記憶装置
US4725984A (en) * 1984-02-21 1988-02-16 Seeq Technology, Inc. CMOS eprom sense amplifier
JP3039458B2 (ja) * 1997-07-07 2000-05-08 日本電気株式会社 不揮発性半導体メモリ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006286180A (ja) * 2005-03-30 2006-10-19 Ovonyx Inc メモリを読み出すためのビット特定基準レベルの使用

Also Published As

Publication number Publication date
JPS57152585A (en) 1982-09-20

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