JPS6144437A - 半導体特性測定装置 - Google Patents
半導体特性測定装置Info
- Publication number
- JPS6144437A JPS6144437A JP15221685A JP15221685A JPS6144437A JP S6144437 A JPS6144437 A JP S6144437A JP 15221685 A JP15221685 A JP 15221685A JP 15221685 A JP15221685 A JP 15221685A JP S6144437 A JPS6144437 A JP S6144437A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- phase
- wafer
- lifetime
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15221685A JPS6144437A (ja) | 1985-07-12 | 1985-07-12 | 半導体特性測定装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15221685A JPS6144437A (ja) | 1985-07-12 | 1985-07-12 | 半導体特性測定装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6144437A true JPS6144437A (ja) | 1986-03-04 |
JPS6237531B2 JPS6237531B2 (enrdf_load_stackoverflow) | 1987-08-13 |
Family
ID=15535612
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15221685A Granted JPS6144437A (ja) | 1985-07-12 | 1985-07-12 | 半導体特性測定装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6144437A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7663385B2 (en) * | 2002-12-13 | 2010-02-16 | Nanometrics Incorporated | Apparatus and method for electrical characterization by selecting and adjusting the light for a target depth of a semiconductor |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04119479U (ja) * | 1991-04-05 | 1992-10-26 | 矢崎総業株式会社 | 車両用表示装置 |
-
1985
- 1985-07-12 JP JP15221685A patent/JPS6144437A/ja active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7663385B2 (en) * | 2002-12-13 | 2010-02-16 | Nanometrics Incorporated | Apparatus and method for electrical characterization by selecting and adjusting the light for a target depth of a semiconductor |
US8232817B2 (en) | 2002-12-13 | 2012-07-31 | Nanometrics Incorporated | Apparatus and method for electrical characterization by selecting and adjusting the light for a target depth of a semiconductor |
US9110127B2 (en) | 2002-12-13 | 2015-08-18 | Nanometrics Incorporated | Apparatus and method for electrical characterization by selecting and adjusting the light for a target depth of a semiconductor |
Also Published As
Publication number | Publication date |
---|---|
JPS6237531B2 (enrdf_load_stackoverflow) | 1987-08-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6556306B2 (en) | Differential time domain spectroscopy method for measuring thin film dielectric properties | |
CN102331403B (zh) | 近场太赫兹THz时域光谱表征方法及其测试装置 | |
US4581578A (en) | Apparatus for measuring carrier lifetimes of a semiconductor wafer | |
KR101465377B1 (ko) | μ-PCD법을 사용한 박막 반도체의 결정성 평가 장치 | |
JPH08316276A (ja) | 電荷測定装置 | |
US4433288A (en) | Method and apparatus for determining minority carrier diffusion length in semiconductors | |
CN110361643A (zh) | 紫外可见光光敏复合介质栅mosfet探测器测试系统及方法 | |
Beck et al. | Contactless scanner for photoactive materials using laser‐induced microwave absorption | |
JPS6144437A (ja) | 半導体特性測定装置 | |
JPS6242537Y2 (enrdf_load_stackoverflow) | ||
JPS6160576B2 (enrdf_load_stackoverflow) | ||
JPS58108752A (ja) | 半導体特性測定装置 | |
JP3650917B2 (ja) | 表面光電圧による半導体表面評価方法及び装置 | |
HUP9902355A2 (hu) | Nagy érzékenységű eljárás és berendezés kisebbségi töltéshordozók élettartamának mérésére félvezető anyagokban | |
Hangyo et al. | Spectroscopy and imaging by laser excited terahertz waves | |
JP3674738B2 (ja) | 少数キャリアのライフタイム測定装置 | |
JPS63133068A (ja) | 回路電圧検出装置 | |
Betz et al. | Non-Destructive Testing of Semiconductor Materials Using Microwave Photoconductivity | |
JP7062481B2 (ja) | 電磁波計測装置 | |
KR102062701B1 (ko) | 준광학 밀리미터 및 테라헤르츠파를 이용한 반도체 캐리어 수명 측정 장치 및 그 방법 | |
RU2383081C1 (ru) | Способ определения фотоэлектрических параметров высокоомных полупроводников | |
JPH01181434A (ja) | ビーム変調分光装置 | |
CN114778567A (zh) | 射频损耗的无损检测系统及方法 | |
CN119510312A (zh) | 一种基于恒温器的物质光谱低温测量系统及方法 | |
Takahashi et al. | Ultrafast EO sampling using ZnTe crystal and Ti: sapphire laser |