JPS6237531B2 - - Google Patents

Info

Publication number
JPS6237531B2
JPS6237531B2 JP15221685A JP15221685A JPS6237531B2 JP S6237531 B2 JPS6237531 B2 JP S6237531B2 JP 15221685 A JP15221685 A JP 15221685A JP 15221685 A JP15221685 A JP 15221685A JP S6237531 B2 JPS6237531 B2 JP S6237531B2
Authority
JP
Japan
Prior art keywords
frequency
phase
light beam
semiconductor
photovoltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15221685A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6144437A (ja
Inventor
Noriaki Honma
Tadasuke Munakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15221685A priority Critical patent/JPS6144437A/ja
Publication of JPS6144437A publication Critical patent/JPS6144437A/ja
Publication of JPS6237531B2 publication Critical patent/JPS6237531B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP15221685A 1985-07-12 1985-07-12 半導体特性測定装置 Granted JPS6144437A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15221685A JPS6144437A (ja) 1985-07-12 1985-07-12 半導体特性測定装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15221685A JPS6144437A (ja) 1985-07-12 1985-07-12 半導体特性測定装置

Publications (2)

Publication Number Publication Date
JPS6144437A JPS6144437A (ja) 1986-03-04
JPS6237531B2 true JPS6237531B2 (enrdf_load_stackoverflow) 1987-08-13

Family

ID=15535612

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15221685A Granted JPS6144437A (ja) 1985-07-12 1985-07-12 半導体特性測定装置

Country Status (1)

Country Link
JP (1) JPS6144437A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04119479U (ja) * 1991-04-05 1992-10-26 矢崎総業株式会社 車両用表示装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7663385B2 (en) * 2002-12-13 2010-02-16 Nanometrics Incorporated Apparatus and method for electrical characterization by selecting and adjusting the light for a target depth of a semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04119479U (ja) * 1991-04-05 1992-10-26 矢崎総業株式会社 車両用表示装置

Also Published As

Publication number Publication date
JPS6144437A (ja) 1986-03-04

Similar Documents

Publication Publication Date Title
US4581578A (en) Apparatus for measuring carrier lifetimes of a semiconductor wafer
EP0656643B1 (en) Method for determining the minority carrier surface recombination lifetime constant(ts) of a specimen of semiconductor material
US4393348A (en) Method and apparatus for determining minority carrier diffusion length in semiconductors
US4563642A (en) Apparatus for nondestructively measuring characteristics of a semiconductor wafer with a junction
JPH08316276A (ja) 電荷測定装置
US7804294B1 (en) Non contact method and apparatus for measurement of sheet resistance of P-N junctions
Datta et al. Electroreflectance and surface photovoltage spectroscopies of semiconductor structures using an indium–tin–oxide-coated glass electrode in soft contact mode
US4464627A (en) Device for measuring semiconductor characteristics
US4544887A (en) Method of measuring photo-induced voltage at the surface of semiconductor materials
CN110646384A (zh) 一种半导体材料电阻率光学测量方法
US20150241512A1 (en) Method and Apparatus for Non-Contact Measurement of Sheet Resistance and Shunt Resistance of P-N Junctions
US4551674A (en) Noncontacting conductivity type determination and surface state spectroscopy of semiconductor materials
JPS6237531B2 (enrdf_load_stackoverflow)
CN108254071A (zh) 一种室温高灵敏太赫兹直接检测系统
JPS6242537Y2 (enrdf_load_stackoverflow)
JP3258465B2 (ja) 物理化学センサ
JPS58108752A (ja) 半導体特性測定装置
JP2003179114A (ja) 半導体ウェーハの抵抗率測定方法
JPS6237532B2 (enrdf_load_stackoverflow)
JPS59178739A (ja) キヤリア移動度測定装置
JPS61139766A (ja) アバランシエホトダイオ−ドの増倍暗電流測定装置
JPH05226445A (ja) 非接触キャリア拡散長測定装置
Betz et al. Non-Destructive Testing of Semiconductor Materials Using Microwave Photoconductivity
RU2019890C1 (ru) Способ определения электрофизических параметров неравновесных носителей заряда в подложках диодных структур
Goodman Improvements in method and apparatus for determining minority carrier diffusion length