JPS6142854B2 - - Google Patents
Info
- Publication number
- JPS6142854B2 JPS6142854B2 JP16315778A JP16315778A JPS6142854B2 JP S6142854 B2 JPS6142854 B2 JP S6142854B2 JP 16315778 A JP16315778 A JP 16315778A JP 16315778 A JP16315778 A JP 16315778A JP S6142854 B2 JPS6142854 B2 JP S6142854B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- amorphous layer
- single crystal
- amorphous
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 13
- 239000012535 impurity Substances 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 230000007547 defect Effects 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 8
- -1 silicon ions Chemical class 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000005468 ion implantation Methods 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 2
- 238000002513 implantation Methods 0.000 description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 238000001953 recrystallisation Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 229910015900 BF3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16315778A JPS5587429A (en) | 1978-12-26 | 1978-12-26 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16315778A JPS5587429A (en) | 1978-12-26 | 1978-12-26 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5587429A JPS5587429A (en) | 1980-07-02 |
| JPS6142854B2 true JPS6142854B2 (ar) | 1986-09-24 |
Family
ID=15768304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16315778A Granted JPS5587429A (en) | 1978-12-26 | 1978-12-26 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5587429A (ar) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0217856U (ar) * | 1988-07-22 | 1990-02-06 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58209120A (ja) * | 1982-05-31 | 1983-12-06 | Toshiba Corp | 半導体装置の製造方法 |
| JPS6095921A (ja) * | 1983-10-31 | 1985-05-29 | Toshiba Corp | 半導体装置の製造方法 |
| JPS61142738A (ja) * | 1984-12-17 | 1986-06-30 | Toshiba Corp | 単結晶基体へのイオン注入方法 |
| JPH0235715A (ja) * | 1988-07-26 | 1990-02-06 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| JPH02306622A (ja) * | 1989-05-22 | 1990-12-20 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
-
1978
- 1978-12-26 JP JP16315778A patent/JPS5587429A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0217856U (ar) * | 1988-07-22 | 1990-02-06 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5587429A (en) | 1980-07-02 |
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