JPS6142832U - Vapor phase growth equipment - Google Patents

Vapor phase growth equipment

Info

Publication number
JPS6142832U
JPS6142832U JP12662384U JP12662384U JPS6142832U JP S6142832 U JPS6142832 U JP S6142832U JP 12662384 U JP12662384 U JP 12662384U JP 12662384 U JP12662384 U JP 12662384U JP S6142832 U JPS6142832 U JP S6142832U
Authority
JP
Japan
Prior art keywords
vapor phase
phase growth
growth equipment
reaction gases
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12662384U
Other languages
Japanese (ja)
Inventor
肇 小杉
Original Assignee
日本電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電気株式会社 filed Critical 日本電気株式会社
Priority to JP12662384U priority Critical patent/JPS6142832U/en
Publication of JPS6142832U publication Critical patent/JPS6142832U/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施例によるLPGVD装置の長手
方向の断面図である。 第2図、第3図は従来のLPGII:VD装置反応部の
長手力向の断面図である。 1・・・ウエーハ支持台、2・・・ウエーハ、3・・・
反応管、4・・・反応管の入口側蓋体、5・・・反応管
の出口側蓋体、6・・・ガス供給孔、7・・・加熱炉、
訃・・排気孔、9・・・排気ポンプ、10.11・・・
ガス導入管。
FIG. 1 is a longitudinal sectional view of an LPGVD device according to an embodiment of the present invention. FIGS. 2 and 3 are longitudinal cross-sectional views of the reaction section of a conventional LPGII:VD device. 1... Wafer support stand, 2... Wafer, 3...
Reaction tube, 4... Reaction tube inlet side cover, 5... Reaction tube outlet side cover, 6... Gas supply hole, 7... Heating furnace,
Death...exhaust hole, 9...exhaust pump, 10.11...
Gas introduction pipe.

Claims (1)

【実用新案登録請求の範囲】 少なくとも2種類以上の反応ガスの供給を必要とする気
箱成長装置において、全ての反応ガスを各々単独に反応
管内に供給するためのガス供給管を有することを特徴と
する薄膜気相成長装置。 ℃
[Claims for Utility Model Registration] A gas chamber growth apparatus that requires the supply of at least two or more types of reaction gases, characterized by having gas supply pipes for individually supplying all the reaction gases into the reaction tubes. Thin film vapor phase growth equipment. ℃
JP12662384U 1984-08-21 1984-08-21 Vapor phase growth equipment Pending JPS6142832U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12662384U JPS6142832U (en) 1984-08-21 1984-08-21 Vapor phase growth equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12662384U JPS6142832U (en) 1984-08-21 1984-08-21 Vapor phase growth equipment

Publications (1)

Publication Number Publication Date
JPS6142832U true JPS6142832U (en) 1986-03-19

Family

ID=30685296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12662384U Pending JPS6142832U (en) 1984-08-21 1984-08-21 Vapor phase growth equipment

Country Status (1)

Country Link
JP (1) JPS6142832U (en)

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