JPS60924U - Vapor phase growth equipment - Google Patents
Vapor phase growth equipmentInfo
- Publication number
- JPS60924U JPS60924U JP9253083U JP9253083U JPS60924U JP S60924 U JPS60924 U JP S60924U JP 9253083 U JP9253083 U JP 9253083U JP 9253083 U JP9253083 U JP 9253083U JP S60924 U JPS60924 U JP S60924U
- Authority
- JP
- Japan
- Prior art keywords
- phase growth
- vapor phase
- growth apparatus
- gas
- growth equipment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は本考案による気相成長装置の一実施例を示す概
要図、第２図は本考案の他の実施例を示す概要図である
。
１・・・・・・ベース、３・・・・・・ベルジャ、４ａ
、 ４ｂ・・・・・・反応室、５・・・・・・サセプ
タ、６・・・・・・ウェハ、７・・・・・・回転軸、８
・・・・・・加熱源、９・・・・・・カバー、１０ａ。
１０ｂ・・・・・・加熱源を収納する室、１２・・・・
・・回転軸ボックス、１３ａ、１３ｂ・・・・・・ノズ
ル、１４・・・・・・ガス制御装置、１５・・・・・・
排気口、１６ａ、１６ｂ・・・・・・排気管、１７．２
０ａ、 ２０ｂ、 ２３・・・・・・バルブ、１８．２
５・・・・・・浄化手段、１９．２６・・・・・・逆止
弁、２１・・・・・・プロセス制御装置、２２・・・・
・・分岐管、２４・・・・・・昇圧装置。FIG. 1 is a schematic diagram showing one embodiment of a vapor phase growth apparatus according to the present invention, and FIG. 2 is a schematic diagram showing another embodiment of the present invention. 1...Base, 3...Bellja, 4a
, 4b... Reaction chamber, 5... Susceptor, 6... Wafer, 7... Rotating shaft, 8
...Heat source, 9...Cover, 10a. 10b... A chamber for storing a heating source, 12...
... Rotating shaft box, 13a, 13b... Nozzle, 14... Gas control device, 15...
Exhaust port, 16a, 16b...Exhaust pipe, 17.2
0a, 20b, 23...Valve, 18.2
5...Purification means, 19.26...Check valve, 21...Process control device, 22...
... Branch pipe, 24 ... Boosting device.
Claims (1)
反応ガスやパージのためなどのガスを導入するようにし
た１ないし複数台からなる気相成長装置において、前記
の各室のうち少なくとも１つの室からのガスの排気口を
、バルブにより前記の各室のうち少な（とも１つの室へ
のガスの導入側に接続可能にしたことを特徴とする気相
成長装置。 ２ ガスの排気口と導入側との接続が１つの気相成長装
置内で行なわれている実用新案登録請求の範囲第１項記
載の気相成長装置。 ３ 排気口が、他の気相成長装置のガスの導入側に接続
されている実用新案登録請求の範囲第１項記載の気相成
長装置。 ４ 排気口からのガスの一部のみをガスの導入側へ戻す
ようになっている実用新案登録請求の範囲第１．２“ま
たは３項記載の気相成長装置。[Scope of Claim for Utility Model Registration] 1. In a vapor phase growth apparatus consisting of one or more units in which a reaction gas or a gas for purging is introduced into a reaction chamber and a chamber adjacent thereto that houses a heating source, etc. , the gas exhaust port from at least one of the chambers can be connected to the gas inlet side of at least one of the chambers by means of a valve. Phase growth apparatus. 2. The vapor phase growth apparatus according to claim 1, wherein the gas exhaust port and the gas introduction side are connected in one vapor phase growth apparatus. 3. The vapor phase growth apparatus according to claim 1 of the utility model registration claim, which is connected to the gas introduction side of the vapor phase growth apparatus.4. A vapor phase growth apparatus according to claim 1.2 or 3 of the utility model registration.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9253083U JPS60924U (en) | 1983-06-16 | 1983-06-16 | Vapor phase growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9253083U JPS60924U (en) | 1983-06-16 | 1983-06-16 | Vapor phase growth equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60924U true JPS60924U (en) | 1985-01-07 |
Family
ID=30222804
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9253083U Pending JPS60924U (en) | 1983-06-16 | 1983-06-16 | Vapor phase growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60924U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7927455B2 (en) | 2004-10-22 | 2011-04-19 | Sharp Kabushiki Kaisha | Plasma processing apparatus |
| US8092640B2 (en) | 2005-01-13 | 2012-01-10 | Sharp Kabushiki Kaisha | Plasma processing apparatus and semiconductor device manufactured by the same apparatus |
-
1983
- 1983-06-16 JP JP9253083U patent/JPS60924U/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7927455B2 (en) | 2004-10-22 | 2011-04-19 | Sharp Kabushiki Kaisha | Plasma processing apparatus |
| US8092640B2 (en) | 2005-01-13 | 2012-01-10 | Sharp Kabushiki Kaisha | Plasma processing apparatus and semiconductor device manufactured by the same apparatus |
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