JPS5965734U - chemical vapor deposition equipment - Google Patents

chemical vapor deposition equipment

Info

Publication number
JPS5965734U
JPS5965734U JP15977482U JP15977482U JPS5965734U JP S5965734 U JPS5965734 U JP S5965734U JP 15977482 U JP15977482 U JP 15977482U JP 15977482 U JP15977482 U JP 15977482U JP S5965734 U JPS5965734 U JP S5965734U
Authority
JP
Japan
Prior art keywords
vapor deposition
chemical vapor
deposition equipment
chamber
deposition apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15977482U
Other languages
Japanese (ja)
Inventor
井上　信市
守 前田
Original Assignee
富士通株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 富士通株式会社 filed Critical 富士通株式会社
Priority to JP15977482U priority Critical patent/JPS5965734U/en
Publication of JPS5965734U publication Critical patent/JPS5965734U/en
Pending legal-status Critical Current

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Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来の化学気相成長装置、第２図は本考案によ
る一実施例の化学気相成長装置である。 図において、２はチャンバー、４は基板、２１は加熱ヒ
ーター、３１はハロゲンランプ、２２・３２は温度調整
器を示す。FIG. 1 shows a conventional chemical vapor deposition apparatus, and FIG. 2 shows an embodiment of the chemical vapor deposition apparatus according to the present invention. In the figure, 2 is a chamber, 4 is a substrate, 21 is a heater, 31 is a halogen lamp, and 22 and 32 are temperature regulators.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] チャンバー内に反応ガスを導入し、基板上に成長膜を形
成する化学気相成長装置において、前記チャンバーの内
壁を所定温度に加熱する加熱機構を設けたことを特徴と
する化学気相成長装置。1. A chemical vapor deposition apparatus for forming a grown film on a substrate by introducing a reactive gas into a chamber, the chemical vapor deposition apparatus comprising a heating mechanism for heating an inner wall of the chamber to a predetermined temperature.
JP15977482U 1982-10-21 1982-10-21 chemical vapor deposition equipment Pending JPS5965734U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15977482U JPS5965734U (en) 1982-10-21 1982-10-21 chemical vapor deposition equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15977482U JPS5965734U (en) 1982-10-21 1982-10-21 chemical vapor deposition equipment

Publications (1)

Publication Number Publication Date
JPS5965734U true JPS5965734U (en) 1984-05-02

Family

ID=30351606

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15977482U Pending JPS5965734U (en) 1982-10-21 1982-10-21 chemical vapor deposition equipment

Country Status (1)

Country Link
JP (1) JPS5965734U (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51149882A (en) * 1975-06-18 1976-12-23 Matsushita Electric Ind Co Ltd Chemical condensation apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51149882A (en) * 1975-06-18 1976-12-23 Matsushita Electric Ind Co Ltd Chemical condensation apparatus

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