JPS6142346B2 - - Google Patents
Info
- Publication number
- JPS6142346B2 JPS6142346B2 JP53126009A JP12600978A JPS6142346B2 JP S6142346 B2 JPS6142346 B2 JP S6142346B2 JP 53126009 A JP53126009 A JP 53126009A JP 12600978 A JP12600978 A JP 12600978A JP S6142346 B2 JPS6142346 B2 JP S6142346B2
- Authority
- JP
- Japan
- Prior art keywords
- transistors
- voltage
- series
- junction
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 22
- 230000015654 memory Effects 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 15
- 239000012535 impurity Substances 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 9
- 230000003068 static effect Effects 0.000 claims description 8
- 230000005669 field effect Effects 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12600978A JPS5552590A (en) | 1978-10-12 | 1978-10-12 | Semiconductor memory unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12600978A JPS5552590A (en) | 1978-10-12 | 1978-10-12 | Semiconductor memory unit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5552590A JPS5552590A (en) | 1980-04-17 |
| JPS6142346B2 true JPS6142346B2 (enrdf_load_stackoverflow) | 1986-09-20 |
Family
ID=14924460
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12600978A Granted JPS5552590A (en) | 1978-10-12 | 1978-10-12 | Semiconductor memory unit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5552590A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0769130A (ja) * | 1993-09-02 | 1995-03-14 | Morozumi Rikio | 自動車の後部燈 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57113487A (en) * | 1980-12-29 | 1982-07-14 | Fujitsu Ltd | Metal-insulator-semiconductor type static memory cell |
-
1978
- 1978-10-12 JP JP12600978A patent/JPS5552590A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0769130A (ja) * | 1993-09-02 | 1995-03-14 | Morozumi Rikio | 自動車の後部燈 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5552590A (en) | 1980-04-17 |
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