JPS6141156B2 - - Google Patents

Info

Publication number
JPS6141156B2
JPS6141156B2 JP54138067A JP13806779A JPS6141156B2 JP S6141156 B2 JPS6141156 B2 JP S6141156B2 JP 54138067 A JP54138067 A JP 54138067A JP 13806779 A JP13806779 A JP 13806779A JP S6141156 B2 JPS6141156 B2 JP S6141156B2
Authority
JP
Japan
Prior art keywords
thin film
film semiconductor
type
semiconductor
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54138067A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5661175A (en
Inventor
Ryosuke Araki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suwa Seikosha KK
Original Assignee
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suwa Seikosha KK filed Critical Suwa Seikosha KK
Priority to JP13806779A priority Critical patent/JPS5661175A/ja
Publication of JPS5661175A publication Critical patent/JPS5661175A/ja
Publication of JPS6141156B2 publication Critical patent/JPS6141156B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
JP13806779A 1979-10-25 1979-10-25 Thin-film solar cell Granted JPS5661175A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13806779A JPS5661175A (en) 1979-10-25 1979-10-25 Thin-film solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13806779A JPS5661175A (en) 1979-10-25 1979-10-25 Thin-film solar cell

Publications (2)

Publication Number Publication Date
JPS5661175A JPS5661175A (en) 1981-05-26
JPS6141156B2 true JPS6141156B2 (US20030204162A1-20031030-M00001.png) 1986-09-12

Family

ID=15213194

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13806779A Granted JPS5661175A (en) 1979-10-25 1979-10-25 Thin-film solar cell

Country Status (1)

Country Link
JP (1) JPS5661175A (US20030204162A1-20031030-M00001.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0485443U (US20030204162A1-20031030-M00001.png) * 1990-11-30 1992-07-24

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5935491A (ja) * 1982-08-24 1984-02-27 Sanyo Electric Co Ltd 光半導体装置
JPS6071151U (ja) * 1983-10-22 1985-05-20 太陽誘電株式会社 太陽電池
JPH04116160U (ja) * 1991-03-29 1992-10-16 三洋電機株式会社 光起電力装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0485443U (US20030204162A1-20031030-M00001.png) * 1990-11-30 1992-07-24

Also Published As

Publication number Publication date
JPS5661175A (en) 1981-05-26

Similar Documents

Publication Publication Date Title
JPS60240171A (ja) 太陽光発電装置
JP3029497B2 (ja) フォトダイオードアレイおよびその製造法
US4012767A (en) Electrical interconnections for semi-conductor devices
US5633526A (en) Photodiode array and method for manufacturing the same
JPH0456468B2 (US20030204162A1-20031030-M00001.png)
JPS599941A (ja) 薄膜半導体装置の製造方法
JPS6141156B2 (US20030204162A1-20031030-M00001.png)
JP2859789B2 (ja) フォトダイオードアレイおよびその製法
JPS58170065A (ja) 薄膜電界効果トランジスタの製造方法
JPS6257259B2 (US20030204162A1-20031030-M00001.png)
US3643138A (en) Semiconductor device
JP3310370B2 (ja) アモルファス太陽電池およびその作製方法
JPS61217087A (ja) 液晶表示装置用非線形抵抗素子
JPH07112052B2 (ja) 光電変換装置の製造方法
JPS58124261A (ja) 半導体装置
JPS597231B2 (ja) 絶縁ゲイト型電界効果半導体装置の作製方法
JPS5651880A (en) Amorphous semiconductor photocell
JPH0521890Y2 (US20030204162A1-20031030-M00001.png)
JP3057846B2 (ja) 半導体装置
JPS6158981B2 (US20030204162A1-20031030-M00001.png)
JPH09260588A (ja) 半導体装置
JPS59198775A (ja) 太陽電池
JPH04234177A (ja) 光起電力装置
JPH057008A (ja) 薄膜ダイオード
JPS5933984B2 (ja) 絶縁ゲイト型電界効果半導体装置の作製方法