JPS6140146B2 - - Google Patents

Info

Publication number
JPS6140146B2
JPS6140146B2 JP53102963A JP10296378A JPS6140146B2 JP S6140146 B2 JPS6140146 B2 JP S6140146B2 JP 53102963 A JP53102963 A JP 53102963A JP 10296378 A JP10296378 A JP 10296378A JP S6140146 B2 JPS6140146 B2 JP S6140146B2
Authority
JP
Japan
Prior art keywords
region
window
type
buried oxide
oxide pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53102963A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5446485A (en
Inventor
Antoniusu Andoreasu Fuan Girusu Yohanesu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JPS5446485A publication Critical patent/JPS5446485A/ja
Publication of JPS6140146B2 publication Critical patent/JPS6140146B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/61—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0116—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including integrated injection logic [I2L]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10W10/012—
    • H10W10/0124—
    • H10W10/0126—
    • H10W10/13—

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
JP10296378A 1977-08-25 1978-08-25 Method of producing semiconductor Granted JPS5446485A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7709363A NL7709363A (nl) 1977-08-25 1977-08-25 Werkwijze ter vervaardiging van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd onder toepassing van een dergelijke werkwijze.

Publications (2)

Publication Number Publication Date
JPS5446485A JPS5446485A (en) 1979-04-12
JPS6140146B2 true JPS6140146B2 (index.php) 1986-09-08

Family

ID=19829072

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10296378A Granted JPS5446485A (en) 1977-08-25 1978-08-25 Method of producing semiconductor

Country Status (9)

Country Link
US (1) US4199378A (index.php)
EP (1) EP0001300B1 (index.php)
JP (1) JPS5446485A (index.php)
AU (1) AU517646B2 (index.php)
CA (1) CA1118532A (index.php)
DE (1) DE2861353D1 (index.php)
ES (1) ES472793A1 (index.php)
IT (1) IT1098127B (index.php)
NL (1) NL7709363A (index.php)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02121143U (index.php) * 1989-03-15 1990-10-01

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4269636A (en) * 1978-12-29 1981-05-26 Harris Corporation Method of fabricating self-aligned bipolar transistor process and device utilizing etching and self-aligned masking
JPS5852339B2 (ja) * 1979-03-20 1983-11-22 富士通株式会社 半導体装置の製造方法
JPS5696852A (en) * 1979-12-29 1981-08-05 Fujitsu Ltd Semiconductor device
EP0044721A3 (en) 1980-07-23 1982-05-12 Jarl Sundseth Air filters
JPS57149770A (en) * 1981-03-11 1982-09-16 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS57194572A (en) * 1981-05-27 1982-11-30 Clarion Co Ltd Semiconductor device and manufacture thereof
US4624046A (en) * 1982-01-04 1986-11-25 Fairchild Camera & Instrument Corp. Oxide isolation process for standard RAM/PROM and lateral PNP cell RAM
US4961102A (en) * 1982-01-04 1990-10-02 Shideler Jay A Junction programmable vertical transistor with high performance transistor
CA1188418A (en) * 1982-01-04 1985-06-04 Jay A. Shideler Oxide isolation process for standard ram/prom and lateral pnp cell ram
US4444605A (en) * 1982-08-27 1984-04-24 Texas Instruments Incorporated Planar field oxide for semiconductor devices
US4507848A (en) * 1982-11-22 1985-04-02 Fairchild Camera & Instrument Corporation Control of substrate injection in lateral bipolar transistors
US4498227A (en) * 1983-07-05 1985-02-12 Fairchild Camera & Instrument Corporation Wafer fabrication by implanting through protective layer
US4860082A (en) * 1984-07-08 1989-08-22 Nec Corporation Bipolar transistor
JPS61220465A (ja) * 1985-03-27 1986-09-30 Toshiba Corp 半導体装置
US4622738A (en) * 1985-04-08 1986-11-18 Advanced Micro Devices, Inc. Method of making integrated bipolar semiconductor device by first forming junction isolation regions and recessed oxide isolation regions without birds beak
US4700461A (en) * 1986-09-29 1987-10-20 Massachusetts Institute Of Technology Process for making junction field-effect transistors
GB2238658B (en) * 1989-11-23 1993-02-17 Stc Plc Improvements in integrated circuits
US5389553A (en) * 1993-06-30 1995-02-14 National Semiconductor Corporation Methods for fabrication of transistors
KR100384560B1 (ko) * 1995-06-30 2003-08-06 주식회사 하이닉스반도체 반도체소자및그제조방법
KR0171000B1 (ko) * 1995-12-15 1999-02-01 양승택 자동 정의된 베이스 전극을 갖는 바이폴라 트랜지스터 구조 및 그 제조방법
JP2001217317A (ja) 2000-02-07 2001-08-10 Sony Corp 半導体装置およびその製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3748187A (en) * 1971-08-03 1973-07-24 Hughes Aircraft Co Self-registered doped layer for preventing field inversion in mis circuits
US3928091A (en) * 1971-09-27 1975-12-23 Hitachi Ltd Method for manufacturing a semiconductor device utilizing selective oxidation
US3992232A (en) * 1973-08-06 1976-11-16 Hitachi, Ltd. Method of manufacturing semiconductor device having oxide isolation structure and guard ring
GB1457139A (en) * 1973-09-27 1976-12-01 Hitachi Ltd Method of manufacturing semiconductor device
NL180466C (nl) * 1974-03-15 1987-02-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een halfgeleiderlichaam voorzien van een in het halfgeleiderlichaam verzonken patroon van isolerend materiaal.
DE2429957B2 (de) * 1974-06-21 1980-08-28 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer dotierten Zone eines bestimmten Leitungstyps in einem Halbleiterkörper
JPS5329555B2 (index.php) * 1974-11-22 1978-08-22
DE2605641C3 (de) * 1976-02-12 1979-12-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Hochfrequenztransistor und Verfahren zu seiner Herstellung
US4066473A (en) * 1976-07-15 1978-01-03 Fairchild Camera And Instrument Corporation Method of fabricating high-gain transistors
JPS5338984A (en) * 1976-09-22 1978-04-10 Hitachi Ltd Manufacture of semiconductor device
US4111720A (en) * 1977-03-31 1978-09-05 International Business Machines Corporation Method for forming a non-epitaxial bipolar integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02121143U (index.php) * 1989-03-15 1990-10-01

Also Published As

Publication number Publication date
EP0001300B1 (en) 1981-11-25
US4199378A (en) 1980-04-22
IT7826940A0 (it) 1978-08-22
JPS5446485A (en) 1979-04-12
AU517646B2 (en) 1981-08-13
ES472793A1 (es) 1979-03-16
DE2861353D1 (en) 1982-01-28
IT1098127B (it) 1985-09-07
CA1118532A (en) 1982-02-16
AU3917778A (en) 1980-02-28
NL7709363A (nl) 1979-02-27
EP0001300A1 (en) 1979-04-04

Similar Documents

Publication Publication Date Title
JPS6140146B2 (index.php)
EP0052450B1 (en) Method of manufacturing a semiconductor device with polycrystalline semiconductor cum metal electrodes
EP0094891B1 (en) Method of fabricating a vertical power mosfet structure
US4445268A (en) Method of manufacturing a semiconductor integrated circuit BI-MOS device
EP0422940B1 (en) Method of forming a DMOS transistor
EP0034910B1 (en) A method of manufacturing a semiconductor device, and a device so manufactured
EP0083816B1 (en) Semiconductor device having an interconnection pattern
JPS622708B2 (index.php)
EP0036319B1 (en) Semiconductor device
KR0166052B1 (ko) 고전압 병합 바이폴라/cmos 및 그 제조 방법
US4323913A (en) Integrated semiconductor circuit arrangement
US4473941A (en) Method of fabricating zener diodes
JP2619340B2 (ja) 半導体素子の高電圧トランジスタ構造及びその製造方法
US4859630A (en) Method of manufacturing a semiconductor device
KR970011641B1 (ko) 반도체 장치 및 제조방법
EP0030147A1 (en) Method for manufacturing a semiconductor integrated circuit
US4691436A (en) Method for fabricating a bipolar semiconductor device by undercutting and local oxidation
EP0337823A2 (en) MOS field effect transistor having high breakdown voltage
US4224631A (en) Semiconductor voltage reference device
GB1593937A (en) I2l integrated circuitry
EP0242893B1 (en) Method of manufacturing a semiconductor device
JP2775765B2 (ja) 半導体装置の製造法
US4762804A (en) Method of manufacturing a bipolar transistor having emitter series resistors
US4216038A (en) Semiconductor device and manufacturing process thereof
US4469535A (en) Method of fabricating semiconductor integrated circuit devices