JPS6140137B2 - - Google Patents
Info
- Publication number
 - JPS6140137B2 JPS6140137B2 JP1847779A JP1847779A JPS6140137B2 JP S6140137 B2 JPS6140137 B2 JP S6140137B2 JP 1847779 A JP1847779 A JP 1847779A JP 1847779 A JP1847779 A JP 1847779A JP S6140137 B2 JPS6140137 B2 JP S6140137B2
 - Authority
 - JP
 - Japan
 - Prior art keywords
 - semiconductor
 - semiconductor substrate
 - metal film
 - group
 - present
 - Prior art date
 - Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
 - Expired
 
Links
- 239000004065 semiconductor Substances 0.000 claims description 46
 - 229920005989 resin Polymers 0.000 claims description 23
 - 239000011347 resin Substances 0.000 claims description 23
 - 239000000758 substrate Substances 0.000 claims description 23
 - 229910052751 metal Inorganic materials 0.000 claims description 14
 - 239000002184 metal Substances 0.000 claims description 14
 - 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 13
 - 125000000217 alkyl group Chemical group 0.000 claims description 2
 - 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
 - 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 2
 - 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 2
 - 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 2
 - 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 2
 - 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
 - 125000003944 tolyl group Chemical group 0.000 claims description 2
 - VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
 - 239000010410 layer Substances 0.000 description 11
 - 229920002050 silicone resin Polymers 0.000 description 11
 - XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
 - 235000012239 silicon dioxide Nutrition 0.000 description 8
 - 239000000377 silicon dioxide Substances 0.000 description 8
 - WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 6
 - 230000001070 adhesive effect Effects 0.000 description 5
 - 230000000694 effects Effects 0.000 description 5
 - 238000000034 method Methods 0.000 description 5
 - 229920006389 polyphenyl polymer Polymers 0.000 description 5
 - 239000000853 adhesive Substances 0.000 description 4
 - 239000002344 surface layer Substances 0.000 description 4
 - 230000015556 catabolic process Effects 0.000 description 3
 - 230000007547 defect Effects 0.000 description 3
 - 238000007654 immersion Methods 0.000 description 3
 - XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
 - 229910052782 aluminium Inorganic materials 0.000 description 2
 - XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
 - RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 2
 - 239000011810 insulating material Substances 0.000 description 2
 - 239000000463 material Substances 0.000 description 2
 - 229910052710 silicon Inorganic materials 0.000 description 2
 - 239000010703 silicon Substances 0.000 description 2
 - 238000010521 absorption reaction Methods 0.000 description 1
 - 239000012790 adhesive layer Substances 0.000 description 1
 - 229910052804 chromium Inorganic materials 0.000 description 1
 - 239000011248 coating agent Substances 0.000 description 1
 - 238000000576 coating method Methods 0.000 description 1
 - 238000007796 conventional method Methods 0.000 description 1
 - 229910052802 copper Inorganic materials 0.000 description 1
 - 230000006866 deterioration Effects 0.000 description 1
 - 238000010586 diagram Methods 0.000 description 1
 - 239000003822 epoxy resin Substances 0.000 description 1
 - PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
 - 229910052737 gold Inorganic materials 0.000 description 1
 - 239000010931 gold Substances 0.000 description 1
 - 238000009413 insulation Methods 0.000 description 1
 - 229910052742 iron Inorganic materials 0.000 description 1
 - UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 1
 - 229910052750 molybdenum Inorganic materials 0.000 description 1
 - 229910052759 nickel Inorganic materials 0.000 description 1
 - 238000004806 packaging method and process Methods 0.000 description 1
 - 238000001259 photo etching Methods 0.000 description 1
 - 230000010287 polarization Effects 0.000 description 1
 - -1 poly(m-chlorophenyl) Polymers 0.000 description 1
 - 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 1
 - 229920000647 polyepoxide Polymers 0.000 description 1
 - 239000002952 polymeric resin Substances 0.000 description 1
 - 229920001296 polysiloxane Polymers 0.000 description 1
 - 229920006395 saturated elastomer Polymers 0.000 description 1
 - 229920003002 synthetic resin Polymers 0.000 description 1
 - 238000007738 vacuum evaporation Methods 0.000 description 1
 - 239000011800 void material Substances 0.000 description 1
 
Classifications
- 
        
- H—ELECTRICITY
 - H01—ELECTRIC ELEMENTS
 - H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
 - H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
 - H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
 - H01L2224/42—Wire connectors; Manufacturing methods related thereto
 - H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
 - H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
 - H01L2224/484—Connecting portions
 - H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
 
 - 
        
- H—ELECTRICITY
 - H01—ELECTRIC ELEMENTS
 - H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
 - H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
 - H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
 - H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
 - H01L2224/85909—Post-treatment of the connector or wire bonding area
 - H01L2224/8592—Applying permanent coating, e.g. protective coating
 
 - 
        
- H—ELECTRICITY
 - H01—ELECTRIC ELEMENTS
 - H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
 - H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
 - H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
 - H01L2924/181—Encapsulation
 
 
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
 
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| JP1847779A JPS55111148A (en) | 1979-02-21 | 1979-02-21 | Semiconductor device | 
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| JP1847779A JPS55111148A (en) | 1979-02-21 | 1979-02-21 | Semiconductor device | 
Publications (2)
| Publication Number | Publication Date | 
|---|---|
| JPS55111148A JPS55111148A (en) | 1980-08-27 | 
| JPS6140137B2 true JPS6140137B2 (enEXAMPLES) | 1986-09-08 | 
Family
ID=11972714
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date | 
|---|---|---|---|
| JP1847779A Granted JPS55111148A (en) | 1979-02-21 | 1979-02-21 | Semiconductor device | 
Country Status (1)
| Country | Link | 
|---|---|
| JP (1) | JPS55111148A (enEXAMPLES) | 
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| JP2613128B2 (ja) * | 1990-10-01 | 1997-05-21 | 三菱電機株式会社 | 半導体装置 | 
| US6143855A (en) * | 1997-04-21 | 2000-11-07 | Alliedsignal Inc. | Organohydridosiloxane resins with high organic content | 
| US6218497B1 (en) | 1997-04-21 | 2001-04-17 | Alliedsignal Inc. | Organohydridosiloxane resins with low organic content | 
| US6177199B1 (en) | 1999-01-07 | 2001-01-23 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with low organic content | 
| US6218020B1 (en) | 1999-01-07 | 2001-04-17 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with high organic content | 
| US10066123B2 (en) | 2013-12-09 | 2018-09-04 | 3M Innovative Properties Company | Curable silsesquioxane polymers, compositions, articles, and methods | 
| US10370564B2 (en) | 2014-06-20 | 2019-08-06 | 3M Innovative Properties Company | Adhesive compositions comprising a silsesquioxane polymer crosslinker, articles and methods | 
| WO2015195355A1 (en) | 2014-06-20 | 2015-12-23 | 3M Innovative Properties Company | Adhesive compositions comprising a silsesquioxane polymer crosslinker, articles and methods | 
| JP2017519081A (ja) | 2014-06-20 | 2017-07-13 | スリーエム イノベイティブ プロパティズ カンパニー | シルセスキオキサンポリマーコア及びシルセスキオキサンポリマー外層を含む硬化性ポリマー並びに方法 | 
| US9957358B2 (en) | 2014-09-22 | 2018-05-01 | 3M Innovative Properties Company | Curable polymers comprising silsesquioxane polymer core silsesquioxane polymer outer layer, and reactive groups | 
| US9957416B2 (en) | 2014-09-22 | 2018-05-01 | 3M Innovative Properties Company | Curable end-capped silsesquioxane polymer comprising reactive groups | 
- 
        1979
        
- 1979-02-21 JP JP1847779A patent/JPS55111148A/ja active Granted
 
 
Also Published As
| Publication number | Publication date | 
|---|---|
| JPS55111148A (en) | 1980-08-27 | 
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