JPS6138852B2 - - Google Patents

Info

Publication number
JPS6138852B2
JPS6138852B2 JP54070856A JP7085679A JPS6138852B2 JP S6138852 B2 JPS6138852 B2 JP S6138852B2 JP 54070856 A JP54070856 A JP 54070856A JP 7085679 A JP7085679 A JP 7085679A JP S6138852 B2 JPS6138852 B2 JP S6138852B2
Authority
JP
Japan
Prior art keywords
metal wiring
insulating film
wiring layer
layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54070856A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55163846A (en
Inventor
Hiroo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7085679A priority Critical patent/JPS55163846A/ja
Publication of JPS55163846A publication Critical patent/JPS55163846A/ja
Publication of JPS6138852B2 publication Critical patent/JPS6138852B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/60—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP7085679A 1979-06-06 1979-06-06 Manufacture of semiconductor device Granted JPS55163846A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7085679A JPS55163846A (en) 1979-06-06 1979-06-06 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7085679A JPS55163846A (en) 1979-06-06 1979-06-06 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55163846A JPS55163846A (en) 1980-12-20
JPS6138852B2 true JPS6138852B2 (Direct) 1986-09-01

Family

ID=13443618

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7085679A Granted JPS55163846A (en) 1979-06-06 1979-06-06 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55163846A (Direct)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4305973A (en) * 1979-07-24 1981-12-15 Hughes Aircraft Company Laser annealed double conductor structure
JPS63146449A (ja) * 1986-12-10 1988-06-18 Sharp Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS55163846A (en) 1980-12-20

Similar Documents

Publication Publication Date Title
US3585088A (en) Methods of producing single crystals on supporting substrates
US4596604A (en) Method of manufacturing a multilayer semiconductor device
JPS59169121A (ja) 半導体デバイスの製造方法
JP2859864B2 (ja) Ｂｐｓｇ膜の表面平坦化方法
JPH02191320A (ja) 結晶物品及びその形成方法
JPS5918196A (ja) 単結晶薄膜の製造方法
JPS6138852B2 (Direct)
JPS6119116A (ja) 半導体装置の製造方法
JPH06107491A (ja) 結晶性薄膜製造方法
JP2861343B2 (ja) 半導体装置およびその製造方法
JPH029450B2 (Direct)
JPH0456453B2 (Direct)
JPS635913B2 (Direct)
JPH0468770B2 (Direct)
JPS5853824A (ja) 半導体装置の製造方法
JPS5933256B2 (ja) 半導体装置の製造方法
JPS6185815A (ja) 多結晶シリコン膜の形成方法
JPH023539B2 (Direct)
JPS58139423A (ja) ラテラルエピタキシヤル成長法
JPS5852330B2 (ja) 半導体装置の製造方法
JPH03237744A (ja) 半導体装置の製造方法
JPH04188771A (ja) 半導体装置の製造法
DE3382588T2 (de) Verfahren zur herstellung von halbleitervorrichtungen mit dielektrisch isolierten halbleitergebieten.
JPS5874034A (ja) 半導体装置の製造方法
JPH10177954A (ja) 多結晶シリコン薄膜の製造方法