JPS6132828B2 - - Google Patents
Info
- Publication number
 - JPS6132828B2 JPS6132828B2 JP50126111A JP12611175A JPS6132828B2 JP S6132828 B2 JPS6132828 B2 JP S6132828B2 JP 50126111 A JP50126111 A JP 50126111A JP 12611175 A JP12611175 A JP 12611175A JP S6132828 B2 JPS6132828 B2 JP S6132828B2
 - Authority
 - JP
 - Japan
 - Prior art keywords
 - region
 - impurity density
 - main current
 - current path
 - gate
 - Prior art date
 - Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
 - Expired
 
Links
Classifications
- 
        
- H—ELECTRICITY
 - H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
 - H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
 - H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
 - H10D12/211—Gated diodes
 - H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
 
 
Landscapes
- Thyristors (AREA)
 
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| JP50126111A JPS5250175A (en) | 1975-10-20 | 1975-10-20 | Electrostatic induction type thyristor | 
| US05/733,930 US4086611A (en) | 1975-10-20 | 1976-10-19 | Static induction type thyristor | 
| US05/760,370 US4171995A (en) | 1975-10-20 | 1977-01-18 | Epitaxial deposition process for producing an electrostatic induction type thyristor | 
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| JP50126111A JPS5250175A (en) | 1975-10-20 | 1975-10-20 | Electrostatic induction type thyristor | 
Publications (2)
| Publication Number | Publication Date | 
|---|---|
| JPS5250175A JPS5250175A (en) | 1977-04-21 | 
| JPS6132828B2 true JPS6132828B2 (en, 2012) | 1986-07-29 | 
Family
ID=14926888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date | 
|---|---|---|---|
| JP50126111A Granted JPS5250175A (en) | 1975-10-20 | 1975-10-20 | Electrostatic induction type thyristor | 
Country Status (1)
| Country | Link | 
|---|---|
| JP (1) | JPS5250175A (en, 2012) | 
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| JPS53143181A (en) * | 1977-05-20 | 1978-12-13 | Hitachi Ltd | Field effect type thyristor | 
| JPS5651866A (en) * | 1979-10-05 | 1981-05-09 | Hitachi Ltd | Electric field effect type thyrister and driving method thereof | 
| JPS61198779A (ja) * | 1985-02-28 | 1986-09-03 | Res Dev Corp Of Japan | 両面ゲ−ト静電誘導サイリスタ及びその製造方法 | 
| DE102006025958B3 (de) * | 2006-06-02 | 2007-10-11 | Infineon Technologies Ag | Sanft schaltendes Halbleiterbauelement mit hoher Robustheit und geringen Schaltverlusten | 
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| CH436492A (de) * | 1965-10-21 | 1967-05-31 | Bbc Brown Boveri & Cie | Steuerbare Halbleitervorrichtung mit mehreren Schichten | 
| DE7317598U (de) * | 1972-06-09 | 1974-04-04 | Bbc Ag | Halbleiterbauelement | 
| JPS579226B2 (en, 2012) * | 1973-05-18 | 1982-02-20 | 
- 
        1975
        
- 1975-10-20 JP JP50126111A patent/JPS5250175A/ja active Granted
 
 
Also Published As
| Publication number | Publication date | 
|---|---|
| JPS5250175A (en) | 1977-04-21 | 
Similar Documents
| Publication | Publication Date | Title | 
|---|---|---|
| KR101645769B1 (ko) | 선택적으로 도핑된 jfet 영역들을 갖는 파워 반도체 디바이스들 및 이러한 디바이스들을 형성하는 관련 방법들 | |
| US5719411A (en) | Three-terminal MOS-gate controlled thyristor structures with current saturation characteristics | |
| JP2663679B2 (ja) | 伝導度変調型mosfet | |
| JP6139312B2 (ja) | 半導体装置 | |
| EP1908116B1 (en) | Power semiconductor device | |
| US20170256614A1 (en) | Vertical insulated gate turn-off thyristor with intermediate p+ layer in p-base | |
| KR101624063B1 (ko) | 베이스 폭이 결정된 래칭 및 비-래칭 상태를 갖는 mct 소자 | |
| US5387805A (en) | Field controlled thyristor | |
| GB2612636A (en) | Semiconductor device | |
| KR20150061971A (ko) | 전력 반도체 소자 및 그의 제조 방법 | |
| JPH03155677A (ja) | 伝導度変調型mosfet | |
| US7262478B2 (en) | Semiconductor device and manufacturing method thereof | |
| JP2006066770A (ja) | 半導体装置 | |
| US8878238B2 (en) | MCT device with base-width-determined latching and non-latching states | |
| KR20150076716A (ko) | 전력 반도체 소자 | |
| US9209287B2 (en) | Power semiconductor device | |
| JPS6132828B2 (en, 2012) | ||
| JPS6124832B2 (en, 2012) | ||
| US20150187869A1 (en) | Power semiconductor device | |
| CN111211167A (zh) | 一种消除负阻效应的rc-igbt器件结构 | |
| JP3551153B2 (ja) | 半導体装置 | |
| JPH05267674A (ja) | 半導体装置 | |
| JPS639386B2 (en, 2012) | ||
| CN210984732U (zh) | 元胞结构及其应用的半导体组件 | |
| JP3288878B2 (ja) | 半導体装置 |