JPS6132824B2 - - Google Patents
Info
- Publication number
- JPS6132824B2 JPS6132824B2 JP56187286A JP18728681A JPS6132824B2 JP S6132824 B2 JPS6132824 B2 JP S6132824B2 JP 56187286 A JP56187286 A JP 56187286A JP 18728681 A JP18728681 A JP 18728681A JP S6132824 B2 JPS6132824 B2 JP S6132824B2
- Authority
- JP
- Japan
- Prior art keywords
- diffusion region
- insulating film
- conductivity type
- type diffusion
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 36
- 238000009792 diffusion process Methods 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56187286A JPS57128060A (en) | 1981-11-19 | 1981-11-19 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56187286A JPS57128060A (en) | 1981-11-19 | 1981-11-19 | Semiconductor device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55145481A Division JPS5834946B2 (ja) | 1980-10-16 | 1980-10-16 | 半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57128060A JPS57128060A (en) | 1982-08-09 |
| JPS6132824B2 true JPS6132824B2 (US08063081-20111122-C00044.png) | 1986-07-29 |
Family
ID=16203335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56187286A Granted JPS57128060A (en) | 1981-11-19 | 1981-11-19 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57128060A (US08063081-20111122-C00044.png) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59208783A (ja) * | 1983-05-12 | 1984-11-27 | Seiko Instr & Electronics Ltd | 薄膜トランジスタ |
-
1981
- 1981-11-19 JP JP56187286A patent/JPS57128060A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57128060A (en) | 1982-08-09 |
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