JPS6130431B2 - - Google Patents

Info

Publication number
JPS6130431B2
JPS6130431B2 JP50048666A JP4866675A JPS6130431B2 JP S6130431 B2 JPS6130431 B2 JP S6130431B2 JP 50048666 A JP50048666 A JP 50048666A JP 4866675 A JP4866675 A JP 4866675A JP S6130431 B2 JPS6130431 B2 JP S6130431B2
Authority
JP
Japan
Prior art keywords
region
semiconductor
conductivity type
diode
diffusion layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP50048666A
Other languages
English (en)
Japanese (ja)
Other versions
JPS51124385A (en
Inventor
Osamu Yamashiro
Isamu Kobayashi
Naoki Yashiki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50048666A priority Critical patent/JPS51124385A/ja
Publication of JPS51124385A publication Critical patent/JPS51124385A/ja
Publication of JPS6130431B2 publication Critical patent/JPS6130431B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP50048666A 1975-04-23 1975-04-23 Complementary type mis semiconductor integrated circuit Granted JPS51124385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50048666A JPS51124385A (en) 1975-04-23 1975-04-23 Complementary type mis semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50048666A JPS51124385A (en) 1975-04-23 1975-04-23 Complementary type mis semiconductor integrated circuit

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP57067300A Division JPS5844763A (ja) 1982-04-23 1982-04-23 相補型ｍｉｓ半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS51124385A JPS51124385A (en) 1976-10-29
JPS6130431B2 true JPS6130431B2 (OSRAM) 1986-07-14

Family

ID=12809644

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50048666A Granted JPS51124385A (en) 1975-04-23 1975-04-23 Complementary type mis semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS51124385A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62297575A (ja) * 1986-05-01 1987-12-24 シ−ルド・パワ−・コ−ポレ−シヨン 電気油圧式制御システム

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5844763A (ja) * 1982-04-23 1983-03-15 Hitachi Ltd 相補型ｍｉｓ半導体集積回路装置
US4626882A (en) * 1984-07-18 1986-12-02 International Business Machines Corporation Twin diode overvoltage protection structure
JPH06216380A (ja) * 1992-10-07 1994-08-05 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2783191B2 (ja) * 1995-06-15 1998-08-06 日本電気株式会社 半導体装置の保護回路

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62297575A (ja) * 1986-05-01 1987-12-24 シ−ルド・パワ−・コ−ポレ−シヨン 電気油圧式制御システム

Also Published As

Publication number Publication date
JPS51124385A (en) 1976-10-29

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