JPH0351103B2 - - Google Patents

Info

Publication number
JPH0351103B2
JPH0351103B2 JP59164638A JP16463884A JPH0351103B2 JP H0351103 B2 JPH0351103 B2 JP H0351103B2 JP 59164638 A JP59164638 A JP 59164638A JP 16463884 A JP16463884 A JP 16463884A JP H0351103 B2 JPH0351103 B2 JP H0351103B2
Authority
JP
Japan
Prior art keywords
region
transistor
semiconductor region
terminal
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59164638A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6089960A (ja
Inventor
Tojiro Takegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP59164638A priority Critical patent/JPS6089960A/ja
Publication of JPS6089960A publication Critical patent/JPS6089960A/ja
Publication of JPH0351103B2 publication Critical patent/JPH0351103B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP59164638A 1984-08-06 1984-08-06 半導体集積回路装置 Granted JPS6089960A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59164638A JPS6089960A (ja) 1984-08-06 1984-08-06 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59164638A JPS6089960A (ja) 1984-08-06 1984-08-06 半導体集積回路装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP50108624A Division JPS6011469B2 (ja) 1975-09-08 1975-09-08 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS6089960A JPS6089960A (ja) 1985-05-20
JPH0351103B2 true JPH0351103B2 (OSRAM) 1991-08-05

Family

ID=15796989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59164638A Granted JPS6089960A (ja) 1984-08-06 1984-08-06 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS6089960A (OSRAM)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5545909A (en) * 1994-10-19 1996-08-13 Siliconix Incorporated Electrostatic discharge protection device for integrated circuit
JP2009188178A (ja) * 2008-02-06 2009-08-20 Fuji Electric Device Technology Co Ltd 半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2147179C3 (de) * 1971-09-22 1984-11-08 Robert Bosch Gmbh, 7000 Stuttgart Monolithisch integrierte Stromquelle
JPS6048905B2 (ja) * 1975-07-18 1985-10-30 株式会社東芝 半導体集積回路装置

Also Published As

Publication number Publication date
JPS6089960A (ja) 1985-05-20

Similar Documents

Publication Publication Date Title
US6236087B1 (en) SCR cell for electrical overstress protection of electronic circuits
US5646433A (en) Pad protection diode structure
US5140401A (en) CMOS ESD protection circuit with parasitic SCR structures
KR100208632B1 (ko) 반도체 집적 회로 및 그 제조 방법
US4922317A (en) CMOS device having Schottky diode for latch-up prevention
US5504362A (en) Electrostatic discharge protection device
US4733285A (en) Semiconductor device with input and/or output protective circuit
US5440151A (en) Electrostatic discharge protection device for MOS integrated circuits
US4543593A (en) Semiconductor protective device
US5763918A (en) ESD structure that employs a schottky-barrier to reduce the likelihood of latch-up
US20020043687A1 (en) Semiconductor input protection circuit
US4918563A (en) ECL gate array semiconductor device with protective elements
US5357126A (en) MOS transistor with an integrated protection zener diode
US20020056876A1 (en) Semiconductor device
JPH1065020A (ja) 半導体装置
US5148250A (en) Bipolar transistor as protective element for integrated circuits
JPH1084098A (ja) 三重井戸技術を用いた高密度ｄｒａｍのｅｓｄ保護
US4812891A (en) Bipolar lateral pass-transistor for CMOS circuits
JPH01146352A (ja) 能動及び受動素子を絶縁ポケット内に含み、各素子とそれを含むポケットの間での破壊電圧よりも高い電圧において動作する集積構造
US12336301B2 (en) Electro-static discharge protection devices having a low trigger voltage
JP3131525B2 (ja) Ｍｏｓパワー・トランジスタ・デバイス
US6320229B1 (en) Semiconductor device
JPH0351103B2 (OSRAM)
JP2680848B2 (ja) 半導体記憶装置
JPH03276757A (ja) 半導体装置