JPH0221660B2 - - Google Patents
Info
- Publication number
- JPH0221660B2 JPH0221660B2 JP57067300A JP6730082A JPH0221660B2 JP H0221660 B2 JPH0221660 B2 JP H0221660B2 JP 57067300 A JP57067300 A JP 57067300A JP 6730082 A JP6730082 A JP 6730082A JP H0221660 B2 JPH0221660 B2 JP H0221660B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- semiconductor
- substrate
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57067300A JPS5844763A (ja) | 1982-04-23 | 1982-04-23 | 相補型mis半導体集積回路装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57067300A JPS5844763A (ja) | 1982-04-23 | 1982-04-23 | 相補型mis半導体集積回路装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50048666A Division JPS51124385A (en) | 1975-04-23 | 1975-04-23 | Complementary type mis semiconductor integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5844763A JPS5844763A (ja) | 1983-03-15 |
| JPH0221660B2 true JPH0221660B2 (OSRAM) | 1990-05-15 |
Family
ID=13341006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57067300A Granted JPS5844763A (ja) | 1982-04-23 | 1982-04-23 | 相補型mis半導体集積回路装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5844763A (OSRAM) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51124385A (en) * | 1975-04-23 | 1976-10-29 | Hitachi Ltd | Complementary type mis semiconductor integrated circuit |
-
1982
- 1982-04-23 JP JP57067300A patent/JPS5844763A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5844763A (ja) | 1983-03-15 |
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