JPS6130403B2 - - Google Patents
Info
- Publication number
- JPS6130403B2 JPS6130403B2 JP11738980A JP11738980A JPS6130403B2 JP S6130403 B2 JPS6130403 B2 JP S6130403B2 JP 11738980 A JP11738980 A JP 11738980A JP 11738980 A JP11738980 A JP 11738980A JP S6130403 B2 JPS6130403 B2 JP S6130403B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- oxygen
- pressure
- argon
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 46
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 40
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 21
- 239000001301 oxygen Substances 0.000 claims description 21
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- 229910052786 argon Inorganic materials 0.000 claims description 20
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 17
- 239000007789 gas Substances 0.000 claims description 12
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 9
- 229910001882 dioxygen Inorganic materials 0.000 claims description 9
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 8
- 239000012298 atmosphere Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 description 23
- 238000000151 deposition Methods 0.000 description 12
- 230000008021 deposition Effects 0.000 description 10
- 238000000427 thin-film deposition Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11738980A JPS5740902A (en) | 1980-08-26 | 1980-08-26 | Methdo of forming thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11738980A JPS5740902A (en) | 1980-08-26 | 1980-08-26 | Methdo of forming thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5740902A JPS5740902A (en) | 1982-03-06 |
| JPS6130403B2 true JPS6130403B2 (enrdf_load_stackoverflow) | 1986-07-14 |
Family
ID=14710434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11738980A Granted JPS5740902A (en) | 1980-08-26 | 1980-08-26 | Methdo of forming thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5740902A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62246310A (ja) * | 1986-04-21 | 1987-10-27 | 松下電工株式会社 | ヘア−ドライヤ |
-
1980
- 1980-08-26 JP JP11738980A patent/JPS5740902A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62246310A (ja) * | 1986-04-21 | 1987-10-27 | 松下電工株式会社 | ヘア−ドライヤ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5740902A (en) | 1982-03-06 |
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