JPS6130352B2 - - Google Patents

Info

Publication number
JPS6130352B2
JPS6130352B2 JP1612181A JP1612181A JPS6130352B2 JP S6130352 B2 JPS6130352 B2 JP S6130352B2 JP 1612181 A JP1612181 A JP 1612181A JP 1612181 A JP1612181 A JP 1612181A JP S6130352 B2 JPS6130352 B2 JP S6130352B2
Authority
JP
Japan
Prior art keywords
transistor
node
potential
transistors
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1612181A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57130293A (en
Inventor
Shigeyoshi Watanabe
Sumio Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP1612181A priority Critical patent/JPS57130293A/ja
Publication of JPS57130293A publication Critical patent/JPS57130293A/ja
Publication of JPS6130352B2 publication Critical patent/JPS6130352B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines

Landscapes

  • Read Only Memory (AREA)
JP1612181A 1981-02-05 1981-02-05 Semiconductor boosting circuit Granted JPS57130293A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1612181A JPS57130293A (en) 1981-02-05 1981-02-05 Semiconductor boosting circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1612181A JPS57130293A (en) 1981-02-05 1981-02-05 Semiconductor boosting circuit

Publications (2)

Publication Number Publication Date
JPS57130293A JPS57130293A (en) 1982-08-12
JPS6130352B2 true JPS6130352B2 (cs) 1986-07-12

Family

ID=11907675

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1612181A Granted JPS57130293A (en) 1981-02-05 1981-02-05 Semiconductor boosting circuit

Country Status (1)

Country Link
JP (1) JPS57130293A (cs)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6318592A (ja) * 1986-07-09 1988-01-26 Toshiba Corp 不揮発性半導体メモリ
JP3713401B2 (ja) * 1999-03-18 2005-11-09 株式会社東芝 チャージポンプ回路

Also Published As

Publication number Publication date
JPS57130293A (en) 1982-08-12

Similar Documents

Publication Publication Date Title
KR0159448B1 (ko) 반도체 기억장치
US4563754A (en) Static-type random-access memory device
KR100281693B1 (ko) 고속 삼상 부스터 회로
US4458336A (en) Semiconductor memory circuit
KR100336254B1 (ko) 승압 회로
US4649289A (en) Circuit for maintaining the potential of a node of a MOS dynamic circuit
US4731552A (en) Boost signal generator with bootstrap means
JP2933090B2 (ja) 不揮発性半導体記憶装置
JP2008262669A (ja) 半導体記憶装置
KR0149224B1 (ko) 반도체 집적장치의 내부전압 승압회로
JPS63268196A (ja) 半導体集積回路
US4736343A (en) Dynamic RAM with active pull-up circuit
JPS6130352B2 (cs)
JPH033317B2 (cs)
JP2001160295A (ja) 半導体集積回路
JP3221929B2 (ja) 半導体装置
JP2679033B2 (ja) 半導体記憶装置
JP3153689B2 (ja) 負電圧発生回路及び不揮発性半導体記憶装置
JPH0745074A (ja) 半導体記憶装置
JPH02273393A (ja) 昇圧信号発生回路
JPS6333239B2 (cs)
JP2596144B2 (ja) 不揮発性半導体記憶装置
JP2004079036A (ja) 電圧制御回路及び半導体記憶装置
JP2578818B2 (ja) 切換え回路
JP2856877B2 (ja) 半導体不揮発性記憶装置