JPS6130030A - 多元素半導体のアニ−ル方法 - Google Patents

多元素半導体のアニ−ル方法

Info

Publication number
JPS6130030A
JPS6130030A JP3773485A JP3773485A JPS6130030A JP S6130030 A JPS6130030 A JP S6130030A JP 3773485 A JP3773485 A JP 3773485A JP 3773485 A JP3773485 A JP 3773485A JP S6130030 A JPS6130030 A JP S6130030A
Authority
JP
Japan
Prior art keywords
annealing
semiconductor
volatile
source
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3773485A
Other languages
English (en)
Japanese (ja)
Other versions
JPH039612B2 (Direct
Inventor
ハロルド・ジヨン・ホヴル
トーマス・フランシス・キーク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS6130030A publication Critical patent/JPS6130030A/ja
Publication of JPH039612B2 publication Critical patent/JPH039612B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0617—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5893—Mixing of deposited material
    • H10P30/206—
    • H10P30/21—
    • H10P95/904—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Thermal Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Lasers (AREA)
JP3773485A 1984-07-12 1985-02-28 多元素半導体のアニ−ル方法 Granted JPS6130030A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US63005684A 1984-07-12 1984-07-12
US630056 1984-07-12

Publications (2)

Publication Number Publication Date
JPS6130030A true JPS6130030A (ja) 1986-02-12
JPH039612B2 JPH039612B2 (Direct) 1991-02-08

Family

ID=24525582

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3773485A Granted JPS6130030A (ja) 1984-07-12 1985-02-28 多元素半導体のアニ−ル方法

Country Status (3)

Country Link
EP (1) EP0169020B1 (Direct)
JP (1) JPS6130030A (Direct)
DE (1) DE3565861D1 (Direct)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63112333U (Direct) * 1987-01-12 1988-07-19
JPH0294647A (ja) * 1988-09-30 1990-04-05 Kokusai Electric Co Ltd ウェーハ処理装置
JPH0297035A (ja) * 1988-05-24 1990-04-09 Balzers Ag 真空処理装置及びそれによるワーク処理方法
US5494494A (en) * 1992-06-24 1996-02-27 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing substrates
JP2014535171A (ja) * 2011-10-27 2014-12-25 コミサリア ア レネルジー アトミック エ オ ゼネルジー アルテルナティブＣｏｍｍｉｓｓａｒｉａｔ Ａｌ’Ｅｎｅｒｇｉｅ Ａｔｏｍｉｑｕｅ Ｅｔ Ａｕｘ Ｅｎｅｒｇｉｅｓａｌｔｅｒｎａｔｉｖｅｓ 熱処理によって表面を平滑化するプロセス

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61199641A (ja) * 1985-02-28 1986-09-04 Oki Electric Ind Co Ltd 化合物半導体素子の製造方法
CN119372787B (zh) * 2024-12-30 2025-09-30 乌镇实验室 一种大尺寸CoSbS基热电半导体晶体及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5650520A (en) * 1979-10-01 1981-05-07 Sony Corp Processing method of semiconductor substrate
JPS57183041A (en) * 1981-05-06 1982-11-11 Nec Corp Annealing method for chemical semiconductor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4312681A (en) * 1980-04-23 1982-01-26 International Business Machines Corporation Annealing of ion implanted III-V compounds in the presence of another III-V
US4383869A (en) * 1981-06-15 1983-05-17 Rca Corporation Method for enhancing electron mobility in GaAs
US4472206A (en) * 1982-11-10 1984-09-18 International Business Machines Corporation Method of activating implanted impurities in broad area compound semiconductors by short time contact annealing

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5650520A (en) * 1979-10-01 1981-05-07 Sony Corp Processing method of semiconductor substrate
JPS57183041A (en) * 1981-05-06 1982-11-11 Nec Corp Annealing method for chemical semiconductor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63112333U (Direct) * 1987-01-12 1988-07-19
JPH0297035A (ja) * 1988-05-24 1990-04-09 Balzers Ag 真空処理装置及びそれによるワーク処理方法
JPH0294647A (ja) * 1988-09-30 1990-04-05 Kokusai Electric Co Ltd ウェーハ処理装置
US5494494A (en) * 1992-06-24 1996-02-27 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing substrates
US5505779A (en) * 1992-06-24 1996-04-09 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing substrates
JP2014535171A (ja) * 2011-10-27 2014-12-25 コミサリア ア レネルジー アトミック エ オ ゼネルジー アルテルナティブＣｏｍｍｉｓｓａｒｉａｔ Ａｌ’Ｅｎｅｒｇｉｅ Ａｔｏｍｉｑｕｅ Ｅｔ Ａｕｘ Ｅｎｅｒｇｉｅｓａｌｔｅｒｎａｔｉｖｅｓ 熱処理によって表面を平滑化するプロセス

Also Published As

Publication number Publication date
EP0169020B1 (en) 1988-10-26
DE3565861D1 (en) 1988-12-01
EP0169020A1 (en) 1986-01-22
JPH039612B2 (Direct) 1991-02-08

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