JPS61292379A - ラツパラウンドコンタクトセル - Google Patents

ラツパラウンドコンタクトセル

Info

Publication number
JPS61292379A
JPS61292379A JP60133797A JP13379785A JPS61292379A JP S61292379 A JPS61292379 A JP S61292379A JP 60133797 A JP60133797 A JP 60133797A JP 13379785 A JP13379785 A JP 13379785A JP S61292379 A JPS61292379 A JP S61292379A
Authority
JP
Japan
Prior art keywords
electrode
silicon layer
contact cell
vertical wall
wall surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60133797A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0260071B2 (enExample
Inventor
Hisanobu Matsutani
松谷　寿信
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP60133797A priority Critical patent/JPS61292379A/ja
Publication of JPS61292379A publication Critical patent/JPS61292379A/ja
Publication of JPH0260071B2 publication Critical patent/JPH0260071B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
JP60133797A 1985-06-19 1985-06-19 ラツパラウンドコンタクトセル Granted JPS61292379A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60133797A JPS61292379A (ja) 1985-06-19 1985-06-19 ラツパラウンドコンタクトセル

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60133797A JPS61292379A (ja) 1985-06-19 1985-06-19 ラツパラウンドコンタクトセル

Publications (2)

Publication Number Publication Date
JPS61292379A true JPS61292379A (ja) 1986-12-23
JPH0260071B2 JPH0260071B2 (enExample) 1990-12-14

Family

ID=15113246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60133797A Granted JPS61292379A (ja) 1985-06-19 1985-06-19 ラツパラウンドコンタクトセル

Country Status (1)

Country Link
JP (1) JPS61292379A (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02384A (ja) * 1987-11-28 1990-01-05 Mitsubishi Electric Corp 太陽電池およびその製造方法
JPH03250673A (ja) * 1990-02-27 1991-11-08 Mitsubishi Electric Corp Ｓｉ基板上化合物半導体光電変換素子
JPH05267697A (ja) * 1991-09-23 1993-10-15 Hughes Aircraft Co 前面薄膜接触部を有する太陽電池
JPH05326991A (ja) * 1991-08-19 1993-12-10 Spectrolab Inc 電気フィードスルー構造およびその製造方法
JPH1093119A (ja) * 1996-09-13 1998-04-10 Sanyo Electric Co Ltd 光起電力装置用基板の製造方法及び光起電力装置
JP2008294080A (ja) * 2007-05-22 2008-12-04 Sanyo Electric Co Ltd 太陽電池セル及び太陽電池セルの製造方法
JP2011505704A (ja) * 2007-12-03 2011-02-24 アイメック メタルラップスルーと改良されたパッシベーションを有する光電池
EP2404328A4 (en) * 2009-03-02 2013-08-14 Lg Electronics Inc SOLAR CELL AND MANUFACTURING METHOD THEREFOR
CN112582489A (zh) * 2020-11-27 2021-03-30 上海空间电源研究所 具有防侧壁短路结构的柔性薄膜太阳电池及其制备方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02384A (ja) * 1987-11-28 1990-01-05 Mitsubishi Electric Corp 太陽電池およびその製造方法
JPH03250673A (ja) * 1990-02-27 1991-11-08 Mitsubishi Electric Corp Ｓｉ基板上化合物半導体光電変換素子
JPH05326991A (ja) * 1991-08-19 1993-12-10 Spectrolab Inc 電気フィードスルー構造およびその製造方法
US5425816A (en) * 1991-08-19 1995-06-20 Spectrolab, Inc. Electrical feedthrough structure and fabrication method
JPH05267697A (ja) * 1991-09-23 1993-10-15 Hughes Aircraft Co 前面薄膜接触部を有する太陽電池
JPH1093119A (ja) * 1996-09-13 1998-04-10 Sanyo Electric Co Ltd 光起電力装置用基板の製造方法及び光起電力装置
JP2008294080A (ja) * 2007-05-22 2008-12-04 Sanyo Electric Co Ltd 太陽電池セル及び太陽電池セルの製造方法
JP2011505704A (ja) * 2007-12-03 2011-02-24 アイメック メタルラップスルーと改良されたパッシベーションを有する光電池
EP2404328A4 (en) * 2009-03-02 2013-08-14 Lg Electronics Inc SOLAR CELL AND MANUFACTURING METHOD THEREFOR
US8569614B2 (en) 2009-03-02 2013-10-29 Lg Electronics Inc. Solar cell and method of manufacturing the same
CN112582489A (zh) * 2020-11-27 2021-03-30 上海空间电源研究所 具有防侧壁短路结构的柔性薄膜太阳电池及其制备方法

Also Published As

Publication number Publication date
JPH0260071B2 (enExample) 1990-12-14

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