JPS6129075B2 - - Google Patents
Info
- Publication number
- JPS6129075B2 JPS6129075B2 JP6817779A JP6817779A JPS6129075B2 JP S6129075 B2 JPS6129075 B2 JP S6129075B2 JP 6817779 A JP6817779 A JP 6817779A JP 6817779 A JP6817779 A JP 6817779A JP S6129075 B2 JPS6129075 B2 JP S6129075B2
- Authority
- JP
- Japan
- Prior art keywords
- memory
- semiconductor memory
- read voltage
- voltage
- monitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
Landscapes
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6817779A JPS55160393A (en) | 1979-05-31 | 1979-05-31 | Read voltage setting system for semiconductor memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6817779A JPS55160393A (en) | 1979-05-31 | 1979-05-31 | Read voltage setting system for semiconductor memory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55160393A JPS55160393A (en) | 1980-12-13 |
| JPS6129075B2 true JPS6129075B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1986-07-04 |
Family
ID=13366223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6817779A Granted JPS55160393A (en) | 1979-05-31 | 1979-05-31 | Read voltage setting system for semiconductor memory |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55160393A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5936393A (ja) * | 1982-08-20 | 1984-02-28 | Mitsubishi Electric Corp | 不揮発性半導体メモリ装置 |
| JPH0754636B2 (ja) * | 1987-07-30 | 1995-06-07 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
| US6839280B1 (en) * | 2003-06-27 | 2005-01-04 | Freescale Semiconductor, Inc. | Variable gate bias for a reference transistor in a non-volatile memory |
-
1979
- 1979-05-31 JP JP6817779A patent/JPS55160393A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55160393A (en) | 1980-12-13 |