JPS61287135A - Inner lead bonding device - Google Patents

Inner lead bonding device

Info

Publication number
JPS61287135A
JPS61287135A JP60128726A JP12872685A JPS61287135A JP S61287135 A JPS61287135 A JP S61287135A JP 60128726 A JP60128726 A JP 60128726A JP 12872685 A JP12872685 A JP 12872685A JP S61287135 A JPS61287135 A JP S61287135A
Authority
JP
Japan
Prior art keywords
semiconductor chip
inner leads
holders
semiconductor
inner lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60128726A
Other languages
Japanese (ja)
Inventor
Yoshifumi Kitayama
北山　喜文
Yukio Maeda
幸男 前田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP60128726A priority Critical patent/JPS61287135A/en
Priority to EP86108039A priority patent/EP0208916A3/en
Publication of JPS61287135A publication Critical patent/JPS61287135A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto

Abstract

PURPOSE:To prevent the defects in inner leads both short-circuiting to a semiconductor and giving damage to a passivation film by a method wherein a pair of holders holding inner leads or resin films are arranged on the periphery of a semiconductor chip making the top level of holders higher than the top level of semiconductor chip. CONSTITUTION:A pair of holders 10 encircling a semiconductor chip 11 are arranged on a table 16 provided with an adsorptive groove 15 to adsorb the semiconductor chip 11. The holders 10 are formed higher than the level of bumps 12 while inner leads are held by the edges of holders 10 not to bring the inner leads 14 into contact with the edges of semiconductor 11 when the semiconductor 11 is bonded by a bonding tool 17. Through these procedures, the defects in inner leads 14 both coming into contact with the semiconductor chip 11 causing short-circuit and giving damage to a passivation film 19 on the semiconductor chip 11 can be prevented from happening.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、樹脂フィルムに保持されたインナーリードと
半導体チップの電極とをインナーリードのバンプを介し
て接合するフィルムキャリア方式によるインナーリード
ボンディング装置に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an inner lead bonding apparatus using a film carrier method for bonding inner leads held by a resin film and electrodes of a semiconductor chip via bumps of the inner leads.

従来の技術 従来のフィルムキャリア方式によるインナーリードボン
ディング装置は第３図に示すように構成されている。樹
脂フィルム３はポリイミドフィルムで形成され、ここに
インナーリード４が接着によって保持されている。イン
ナーリード４の先端下面には金でできたバンプ２が取付
けられている。2. Description of the Related Art A conventional film carrier type inner lead bonding apparatus is constructed as shown in FIG. The resin film 3 is formed of a polyimide film, and the inner leads 4 are held therein by adhesive. A bump 2 made of gold is attached to the lower surface of the tip of the inner lead 4.

他方、テーブル６上には上面適所にアルミニウム電極８
が形成されると共に、その周囲がパッシベーション膜９
で被覆されている半導体チップ１が固定されている。６
はパキエーム圧で半導体チツ・プ１をテーブルｅ上に固
定するために設けられた吸着溝である。On the other hand, an aluminum electrode 8 is placed on the top surface of the table 6.
is formed, and a passivation film 9 is formed around it.
A semiconductor chip 1 covered with is fixed. 6
is a suction groove provided for fixing the semiconductor chip 1 on the table e with Paquiem pressure.

前記バンプ２と前爬アルミニウム電極８は、第３図に示
すように位置合せされ、ボンディングツール７によって
押圧力及び熱を与えられることによって接合される。The bump 2 and the front aluminum electrode 8 are aligned as shown in FIG. 3, and bonded by applying pressing force and heat by the bonding tool 7.

発明が解決しようとする問題点 しかしながら、このような構成では、金とアルミニウム
の熱圧着方式になるので、ポンディング温度は３００℃
〜６６０℃の範囲になる。したがってボンディングツー
ル７の熱がインナーリード４を伝わってポリイミドフィ
ルム３を第３図に示すように熱変形させるため、インナ
ーリード４が半導体チップ１のエツジ部に接触して、短
絡の原因になってしまう欠点があった。また、インテー
ク リード４で半導体チップ１のバラ９ペーシツン膜９を損
傷させるという問題もあった。Problems to be Solved by the Invention However, in this configuration, gold and aluminum are bonded by thermocompression, so the bonding temperature is 300°C.
~660°C. Therefore, the heat from the bonding tool 7 is transmitted through the inner leads 4 and thermally deforms the polyimide film 3 as shown in FIG. 3, causing the inner leads 4 to come into contact with the edges of the semiconductor chip 1, causing a short circuit. There was a drawback. Further, there is also a problem in that the intake lead 4 damages the discrete film 9 of the semiconductor chip 1.

本発明は上記の問題に鑑み、ポリイミドなどの樹脂フィ
ルム３の熱変形を防止して、インナーリード４を半導体
チップ１に接触させないインナーリードボンディング装
置を提供することを目的とする。In view of the above problems, an object of the present invention is to provide an inner lead bonding device that prevents thermal deformation of a resin film 3 such as polyimide and prevents inner leads 4 from coming into contact with semiconductor chips 1.

問題点を解決するための手段 上記問題点を解決するために本発明は、テーブル上に固
定された半導体チップの電極と、樹脂フィルムに保持さ
れたインナーリードの端部とを、バンプを介すると共に
ボンディングツールによって押圧力及び熱を与えて接合
するインナーリードボンディング装置において、前記半
導体チップの周囲に前記インナーリード又は前記樹脂フ
ィルムを支持する支持体を前記テーブル上に配置すると
共に、前記支持体の上面が半導体チップの上面より高く
なるように構成したことを特徴とする。Means for Solving the Problems In order to solve the above problems, the present invention connects the electrodes of a semiconductor chip fixed on a table and the ends of inner leads held by a resin film through bumps and In an inner lead bonding apparatus that performs bonding by applying pressing force and heat using a bonding tool, a support that supports the inner leads or the resin film is placed around the semiconductor chip on the table, and the upper surface of the support is is characterized in that it is configured such that it is higher than the top surface of the semiconductor chip.

作　　用 本発明は上記した構成によって、インナーリード又は樹
脂フィルムを支持する支持体で樹脂フィルムの変形を防
止できるので、インナーリードが半導体チップのエツジ
などに接触するのを防止できる。Function: With the above-described configuration, the present invention can prevent deformation of the resin film by using the support that supports the inner leads or the resin film, thereby preventing the inner leads from coming into contact with the edges of the semiconductor chip.

実施例 以下本発明の一実施例のインナーリードボンディング装
置について、図面を参照しながら説明する。EXAMPLE Hereinafter, an inner lead bonding apparatus according to an example of the present invention will be described with reference to the drawings.

第１図は本発明の一実施例の主要部の縦断正面図を示し
、第２図はその平面図を示すものである。FIG. 1 shows a longitudinal sectional front view of the main parts of an embodiment of the present invention, and FIG. 2 shows a plan view thereof.

その構成は、半導体チップ１１を吸着するだめの吸着溝
１６を具備したテーブル１６上に半導体チップ１１を囲
むようにして１対の支持体１ｏが配置されている。この
支持体１０は、図示しているようにバンプ１２の高さよ
りも高く形成され、ボンディングツール１７でボンディ
ングするときにインナーリード１４が半導体チップ１１
のエツジに接触しないように支持体１ｏのエツジでイン
ナーリード１４を保持するように構成される。Its structure is such that a pair of supports 1o are placed so as to surround the semiconductor chip 11 on a table 16 having suction grooves 16 for suctioning the semiconductor chip 11. This support body 10 is formed higher than the height of the bumps 12 as shown in the figure, and when bonding is performed using a bonding tool 17, the inner leads 14 are formed to be higher than the height of the semiconductor chip 12.
The inner lead 14 is held at the edge of the support 1o so as not to come into contact with the edge of the support 1o.

このような構成によれば、インナーリード１４が半導体
チップ１１に接触して、短絡するという不良を防止でき
るとともに、インナーリード１４が半導体チップ１１の
パッシベーション膜１９に損傷を与えるという不都合が
防止できる。なお、１２は金などのバンプ、１３はポリ
イミドフィルムなどの樹脂フィルム、１８はアルミニウ
ムなどで形成された電極である。According to such a configuration, it is possible to prevent the inner lead 14 from coming into contact with the semiconductor chip 11 and cause a short circuit, and it is also possible to prevent the inner lead 14 from damaging the passivation film 19 of the semiconductor chip 11. Note that 12 is a bump made of gold or the like, 13 is a resin film such as a polyimide film, and 18 is an electrode made of aluminum or the like.

前記テーブル１６と支持体１ｏとは加熱されていてもよ
い。又支持体１ｏは枠状に形成する等任意の形状に形成
することができ、樹脂フィルム１３を支持する位置に配
置してもよい。更に支持体１゜の上面は半導体チップ１
１の上面より高くなっていればよく、この範囲で支持体
１ｏの高さは任意に設定することができる。The table 16 and the support 1o may be heated. Further, the support body 1o can be formed into any shape such as a frame shape, and may be placed at a position where the resin film 13 is supported. Furthermore, the upper surface of the support body 1° is the semiconductor chip 1
The height of the support 1o can be arbitrarily set within this range as long as it is higher than the upper surface of the support 1o.

発明の効果 以上のように本発明は、半導体チップの周囲にインナー
リード又は樹脂フィルムを支持する支持体を配置し、そ
の上面が半導体チップの上面より高くなるように構成し
ているので、インナーリードが半導体チップに接触して
、短絡したり、パッシベーション膜を破壊したりすると
いう従来例の問題点を解決することができる。Effects of the Invention As described above, in the present invention, a support for supporting inner leads or a resin film is arranged around a semiconductor chip, and the upper surface thereof is higher than the upper surface of the semiconductor chip. It is possible to solve the problems of the conventional example in which the semiconductor chip comes into contact with the semiconductor chip, causing a short circuit or destroying the passivation film.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の一実施例におけるインナーリードボン
ディング装置の主要部の縦断正面図、第２図はその平面
図、第３図は従来のインナーリードボンディング装置の
縦断正面図である。 １０・・・・・・支持体、１１・・・・・・半導体チッ
プ、１２・・・・・・バンプ、１３・・・・・・樹脂フ
ィルム、１４・・・・・・イアｆ−リ−）”、１６・・
・・・・チーフル、１７・・・・・・ボンディングツー
ル。FIG. 1 is a longitudinal sectional front view of the main parts of an inner lead bonding apparatus according to an embodiment of the present invention, FIG. 2 is a plan view thereof, and FIG. 3 is a longitudinal sectional front view of a conventional inner lead bonding apparatus. DESCRIPTION OF SYMBOLS 10...Support, 11...Semiconductor chip, 12...Bump, 13...Resin film, 14...Ear f-li -)", 16...
...Chiful, 17...Bonding tool.

Claims (1)

【特許請求の範囲】[Claims] テーブル上に固定された半導体チップの電極と、樹脂フ
ィルムに保持されたインナーリードの端部とを、バンプ
を介すると共にボンディングツールによって押圧力及び
熱を与えて接合するインナーリードボンディング装置に
おいて、前記半導体チップの周囲に前記インナーリード
又は前記樹脂フィルムを支持する支持体を前記テーブル
上に配置すると共に、前記支持体の上面が半導体チップ
の上面より高くなるように構成したことを特徴とするイ
ンナーリードボンディング装置。In an inner lead bonding apparatus for bonding electrodes of a semiconductor chip fixed on a table and ends of inner leads held by a resin film through bumps and applying pressing force and heat by a bonding tool, the semiconductor Inner lead bonding characterized in that a support for supporting the inner lead or the resin film is arranged around the chip on the table, and the upper surface of the support is higher than the upper surface of the semiconductor chip. Device.
JP60128726A 1985-06-13 1985-06-13 Inner lead bonding device Pending JPS61287135A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60128726A JPS61287135A (en) 1985-06-13 1985-06-13 Inner lead bonding device
EP86108039A EP0208916A3 (en) 1985-06-13 1986-06-12 Inner-lead bonding apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60128726A JPS61287135A (en) 1985-06-13 1985-06-13 Inner lead bonding device

Publications (1)

Publication Number Publication Date
JPS61287135A true JPS61287135A (en) 1986-12-17

Family

ID=14991920

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60128726A Pending JPS61287135A (en) 1985-06-13 1985-06-13 Inner lead bonding device

Country Status (1)

Country Link
JP (1) JPS61287135A (en)

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