JPS61276249A - 入力保護回路 - Google Patents

入力保護回路

Info

Publication number
JPS61276249A
JPS61276249A JP60117049A JP11704985A JPS61276249A JP S61276249 A JPS61276249 A JP S61276249A JP 60117049 A JP60117049 A JP 60117049A JP 11704985 A JP11704985 A JP 11704985A JP S61276249 A JPS61276249 A JP S61276249A
Authority
JP
Japan
Prior art keywords
voltage
input
gate
drain
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60117049A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0244151B2 (enrdf_load_stackoverflow
Inventor
Hideji Koike
秀治 小池
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60117049A priority Critical patent/JPS61276249A/ja
Publication of JPS61276249A publication Critical patent/JPS61276249A/ja
Publication of JPH0244151B2 publication Critical patent/JPH0244151B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

Landscapes

  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP60117049A 1985-05-30 1985-05-30 入力保護回路 Granted JPS61276249A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60117049A JPS61276249A (ja) 1985-05-30 1985-05-30 入力保護回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60117049A JPS61276249A (ja) 1985-05-30 1985-05-30 入力保護回路

Publications (2)

Publication Number Publication Date
JPS61276249A true JPS61276249A (ja) 1986-12-06
JPH0244151B2 JPH0244151B2 (enrdf_load_stackoverflow) 1990-10-02

Family

ID=14702157

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60117049A Granted JPS61276249A (ja) 1985-05-30 1985-05-30 入力保護回路

Country Status (1)

Country Link
JP (1) JPS61276249A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6439118A (en) * 1987-08-04 1989-02-09 Nec Corp Gaas semiconductor integrated circuit
JPH0329361A (ja) * 1989-06-26 1991-02-07 Nec Corp 半導体装置
JPH05267658A (ja) * 1992-02-19 1993-10-15 Nec Corp Cmos半導体集積回路
JP2002076282A (ja) * 2000-08-30 2002-03-15 Nec Corp 半導体集積回路装置及びその設計方法
JP2003504860A (ja) * 1999-06-29 2003-02-04 コックレア リミティド 標準cmosプロセスの高電圧保護回路
EP0666596B1 (en) * 1994-02-03 2003-05-14 Infineon Technologies AG Protection apparatus for series pass MOSFETs

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6439118A (en) * 1987-08-04 1989-02-09 Nec Corp Gaas semiconductor integrated circuit
JPH0329361A (ja) * 1989-06-26 1991-02-07 Nec Corp 半導体装置
JPH05267658A (ja) * 1992-02-19 1993-10-15 Nec Corp Cmos半導体集積回路
EP0666596B1 (en) * 1994-02-03 2003-05-14 Infineon Technologies AG Protection apparatus for series pass MOSFETs
JP2003504860A (ja) * 1999-06-29 2003-02-04 コックレア リミティド 標準cmosプロセスの高電圧保護回路
JP4763192B2 (ja) * 1999-06-29 2011-08-31 コクレア リミテッド 標準cmosプロセスの高電圧保護回路
JP2002076282A (ja) * 2000-08-30 2002-03-15 Nec Corp 半導体集積回路装置及びその設計方法

Also Published As

Publication number Publication date
JPH0244151B2 (enrdf_load_stackoverflow) 1990-10-02

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Legal Events

Date Code Title Description
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