JPS6439118A - Gaas semiconductor integrated circuit - Google Patents

Gaas semiconductor integrated circuit

Info

Publication number
JPS6439118A
JPS6439118A JP62195584A JP19558487A JPS6439118A JP S6439118 A JPS6439118 A JP S6439118A JP 62195584 A JP62195584 A JP 62195584A JP 19558487 A JP19558487 A JP 19558487A JP S6439118 A JPS6439118 A JP S6439118A
Authority
JP
Japan
Prior art keywords
surge
fet11
cut
terminal
fet12
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62195584A
Other languages
Japanese (ja)
Inventor
Ryuichiro Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62195584A priority Critical patent/JPS6439118A/en
Publication of JPS6439118A publication Critical patent/JPS6439118A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits

Landscapes

  • Logic Circuits (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electronic Switches (AREA)

Abstract

PURPOSE:To improve the anti-surge performance without deteriorating the high frequency characteristics by connecting the source of an anti-surge FET to an input part of an internal circuit together with the drain of a protecting FET connected to an input terminal and the source grounded respectively. CONSTITUTION:The surge noise is applied to an input terminal 8 connected with the drain of an anti-surge FET11 when an element is assembled. In such a case, the surge current is limited by the current saturation characteristics of the FET11 and bypassed by a ground terminal via a protecting FET12. Thus the surge current never damages a driving FET1. When the element works, the voltage is applied to an external terminal 13 for pinch-off of both FET11 and 12. In this case, the cut-off FET11 functions as a DC preventing capacitor and the surge noise applied to the terminal 8 at actuation of the element is divided and attenuated. Furthermore, the signal which passes through a contact 9 via the cut-off capacity of the FET11 is applied to the gate of the FET1 with no attenuation since the FET12 is also cut off.
JP62195584A 1987-08-04 1987-08-04 Gaas semiconductor integrated circuit Pending JPS6439118A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62195584A JPS6439118A (en) 1987-08-04 1987-08-04 Gaas semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62195584A JPS6439118A (en) 1987-08-04 1987-08-04 Gaas semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS6439118A true JPS6439118A (en) 1989-02-09

Family

ID=16343570

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62195584A Pending JPS6439118A (en) 1987-08-04 1987-08-04 Gaas semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS6439118A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009033637A (en) * 2007-07-30 2009-02-12 Panasonic Corp Level conversion circuit
JP2010233245A (en) * 2002-12-25 2010-10-14 Semiconductor Energy Lab Co Ltd Semiconductor device and display device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5421252A (en) * 1977-07-19 1979-02-17 Mitsubishi Electric Corp Noise suppression circuit
JPS5568736A (en) * 1978-11-20 1980-05-23 Hitachi Ltd Mis input protective circuit
JPS5848530A (en) * 1981-09-18 1983-03-22 Nec Corp Input circuit
JPS61276249A (en) * 1985-05-30 1986-12-06 Toshiba Corp Input protective circuit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5421252A (en) * 1977-07-19 1979-02-17 Mitsubishi Electric Corp Noise suppression circuit
JPS5568736A (en) * 1978-11-20 1980-05-23 Hitachi Ltd Mis input protective circuit
JPS5848530A (en) * 1981-09-18 1983-03-22 Nec Corp Input circuit
JPS61276249A (en) * 1985-05-30 1986-12-06 Toshiba Corp Input protective circuit

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010233245A (en) * 2002-12-25 2010-10-14 Semiconductor Energy Lab Co Ltd Semiconductor device and display device
US8456402B2 (en) 2002-12-25 2013-06-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device and electronic device utilizing the same
US9190425B2 (en) 2002-12-25 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device and electronic device utilizing the same
US9640135B2 (en) 2002-12-25 2017-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device and electronic device utilizing the same
US9881582B2 (en) 2002-12-25 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device and electronic device utilizing the same
US10121448B2 (en) 2002-12-25 2018-11-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device and electronic device utilizing the same
US10373581B2 (en) 2002-12-25 2019-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device and electronic device utilizing the same
US10867576B2 (en) 2002-12-25 2020-12-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device and electronic device utilizing the same
US11217200B2 (en) 2002-12-25 2022-01-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device and electronic device utilizing the same
JP2009033637A (en) * 2007-07-30 2009-02-12 Panasonic Corp Level conversion circuit

Similar Documents

Publication Publication Date Title
EP0723338B1 (en) Switching circuit
KR920022875A (en) Semiconductor devices and tuners for tuners
JPH0365016B2 (en)
US4963773A (en) Low pass/high pass filter phase shifter
JPS6439118A (en) Gaas semiconductor integrated circuit
KR0129843B1 (en) Micro frequency monolithic low noise amplifier
US20060219534A1 (en) Switch circuit, semiconductor device, and method of manufacturing said semiconductor device
US20020118044A1 (en) Switching circuit device
JPH05235677A (en) Limiter circuit
JPH10173136A (en) Protection circuit
JP3594762B2 (en) Semiconductor switch integrated circuit
JPS6097720A (en) High frequency switch circuit
JPH0774185A (en) Semiconductor device
EP0951144A3 (en) Filter circuit
JP2994650B2 (en) High frequency amplifier
KR100407841B1 (en) Unbalanced Field Effect Transistor Mixer
JPH0543545Y2 (en)
SU1202024A1 (en) Current source
JP2743884B2 (en) Microwave switch
JPH0370380B2 (en)
JPH06169246A (en) Fet switch circuit
JPS60106226A (en) Analog switch circuit
JPH11186890A (en) Semiconductor switch integrated circuit
JPH04364078A (en) Dual gate field effect transistor
JPS6116554A (en) Semiconductor device