JPS6439118A - Gaas semiconductor integrated circuit - Google Patents
Gaas semiconductor integrated circuitInfo
- Publication number
- JPS6439118A JPS6439118A JP62195584A JP19558487A JPS6439118A JP S6439118 A JPS6439118 A JP S6439118A JP 62195584 A JP62195584 A JP 62195584A JP 19558487 A JP19558487 A JP 19558487A JP S6439118 A JPS6439118 A JP S6439118A
- Authority
- JP
- Japan
- Prior art keywords
- surge
- fet11
- cut
- terminal
- fet12
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
Landscapes
- Logic Circuits (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Junction Field-Effect Transistors (AREA)
- Electronic Switches (AREA)
Abstract
PURPOSE:To improve the anti-surge performance without deteriorating the high frequency characteristics by connecting the source of an anti-surge FET to an input part of an internal circuit together with the drain of a protecting FET connected to an input terminal and the source grounded respectively. CONSTITUTION:The surge noise is applied to an input terminal 8 connected with the drain of an anti-surge FET11 when an element is assembled. In such a case, the surge current is limited by the current saturation characteristics of the FET11 and bypassed by a ground terminal via a protecting FET12. Thus the surge current never damages a driving FET1. When the element works, the voltage is applied to an external terminal 13 for pinch-off of both FET11 and 12. In this case, the cut-off FET11 functions as a DC preventing capacitor and the surge noise applied to the terminal 8 at actuation of the element is divided and attenuated. Furthermore, the signal which passes through a contact 9 via the cut-off capacity of the FET11 is applied to the gate of the FET1 with no attenuation since the FET12 is also cut off.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62195584A JPS6439118A (en) | 1987-08-04 | 1987-08-04 | Gaas semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62195584A JPS6439118A (en) | 1987-08-04 | 1987-08-04 | Gaas semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6439118A true JPS6439118A (en) | 1989-02-09 |
Family
ID=16343570
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62195584A Pending JPS6439118A (en) | 1987-08-04 | 1987-08-04 | Gaas semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6439118A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009033637A (en) * | 2007-07-30 | 2009-02-12 | Panasonic Corp | Level conversion circuit |
JP2010233245A (en) * | 2002-12-25 | 2010-10-14 | Semiconductor Energy Lab Co Ltd | Semiconductor device and display device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5421252A (en) * | 1977-07-19 | 1979-02-17 | Mitsubishi Electric Corp | Noise suppression circuit |
JPS5568736A (en) * | 1978-11-20 | 1980-05-23 | Hitachi Ltd | Mis input protective circuit |
JPS5848530A (en) * | 1981-09-18 | 1983-03-22 | Nec Corp | Input circuit |
JPS61276249A (en) * | 1985-05-30 | 1986-12-06 | Toshiba Corp | Input protective circuit |
-
1987
- 1987-08-04 JP JP62195584A patent/JPS6439118A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5421252A (en) * | 1977-07-19 | 1979-02-17 | Mitsubishi Electric Corp | Noise suppression circuit |
JPS5568736A (en) * | 1978-11-20 | 1980-05-23 | Hitachi Ltd | Mis input protective circuit |
JPS5848530A (en) * | 1981-09-18 | 1983-03-22 | Nec Corp | Input circuit |
JPS61276249A (en) * | 1985-05-30 | 1986-12-06 | Toshiba Corp | Input protective circuit |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010233245A (en) * | 2002-12-25 | 2010-10-14 | Semiconductor Energy Lab Co Ltd | Semiconductor device and display device |
US8456402B2 (en) | 2002-12-25 | 2013-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device and electronic device utilizing the same |
US9190425B2 (en) | 2002-12-25 | 2015-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device and electronic device utilizing the same |
US9640135B2 (en) | 2002-12-25 | 2017-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device and electronic device utilizing the same |
US9881582B2 (en) | 2002-12-25 | 2018-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device and electronic device utilizing the same |
US10121448B2 (en) | 2002-12-25 | 2018-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device and electronic device utilizing the same |
US10373581B2 (en) | 2002-12-25 | 2019-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device and electronic device utilizing the same |
US10867576B2 (en) | 2002-12-25 | 2020-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device and electronic device utilizing the same |
US11217200B2 (en) | 2002-12-25 | 2022-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device and electronic device utilizing the same |
JP2009033637A (en) * | 2007-07-30 | 2009-02-12 | Panasonic Corp | Level conversion circuit |
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