JPS61275192A - 半導体薄膜気相成長法 - Google Patents

半導体薄膜気相成長法

Info

Publication number
JPS61275192A
JPS61275192A JP60118378A JP11837885A JPS61275192A JP S61275192 A JPS61275192 A JP S61275192A JP 60118378 A JP60118378 A JP 60118378A JP 11837885 A JP11837885 A JP 11837885A JP S61275192 A JPS61275192 A JP S61275192A
Authority
JP
Japan
Prior art keywords
thin film
semiconductor thin
vapor phase
wave function
susceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60118378A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0246558B2 (enExample
Inventor
Masakiyo Ikeda
正清 池田
Seiji Kojima
児島　誠司
Koji Kikuchi
浩司 菊地
Yuzo Kashiyanagi
柏柳　雄三
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Priority to JP60118378A priority Critical patent/JPS61275192A/ja
Priority to CA000510171A priority patent/CA1268688A/en
Priority to US06/868,060 priority patent/US4705700A/en
Priority to DE8686107382T priority patent/DE3664793D1/de
Priority to EP86107382A priority patent/EP0203616B1/en
Publication of JPS61275192A publication Critical patent/JPS61275192A/ja
Publication of JPH0246558B2 publication Critical patent/JPH0246558B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP60118378A 1985-05-31 1985-05-31 半導体薄膜気相成長法 Granted JPS61275192A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP60118378A JPS61275192A (ja) 1985-05-31 1985-05-31 半導体薄膜気相成長法
CA000510171A CA1268688A (en) 1985-05-31 1986-05-28 Chemical vapor deposition method for the thin film of semiconductor
US06/868,060 US4705700A (en) 1985-05-31 1986-05-29 Chemical vapor deposition method for the thin film of semiconductor
DE8686107382T DE3664793D1 (en) 1985-05-31 1986-05-30 Chemical vapor deposition method for the thin film of semiconductor
EP86107382A EP0203616B1 (en) 1985-05-31 1986-05-30 Chemical vapor deposition method for the thin film of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60118378A JPS61275192A (ja) 1985-05-31 1985-05-31 半導体薄膜気相成長法

Publications (2)

Publication Number Publication Date
JPS61275192A true JPS61275192A (ja) 1986-12-05
JPH0246558B2 JPH0246558B2 (enExample) 1990-10-16

Family

ID=14735212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60118378A Granted JPS61275192A (ja) 1985-05-31 1985-05-31 半導体薄膜気相成長法

Country Status (5)

Country Link
US (1) US4705700A (enExample)
EP (1) EP0203616B1 (enExample)
JP (1) JPS61275192A (enExample)
CA (1) CA1268688A (enExample)
DE (1) DE3664793D1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3709657A1 (de) * 1987-03-24 1988-10-06 Licentia Gmbh Movpe-verfahren
JPH01125923A (ja) * 1987-11-11 1989-05-18 Sumitomo Chem Co Ltd 気相成長装置
US5298107A (en) * 1992-02-27 1994-03-29 Applied Materials, Inc. Processing method for growing thick films
GB9206442D0 (en) * 1992-03-25 1992-05-06 Metal Research Semiconductors Treatment chamber
US5747113A (en) * 1996-07-29 1998-05-05 Tsai; Charles Su-Chang Method of chemical vapor deposition for producing layer variation by planetary susceptor rotation
US6231933B1 (en) 1999-03-18 2001-05-15 Primaxx, Inc. Method and apparatus for metal oxide chemical vapor deposition on a substrate surface
KR100631972B1 (ko) * 2005-02-28 2006-10-11 삼성전기주식회사 화학기상증착 공정을 이용한 초격자 반도체 구조를 제조하는 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3633537A (en) * 1970-07-06 1972-01-11 Gen Motors Corp Vapor deposition apparatus with planetary susceptor
US4275282A (en) * 1980-03-24 1981-06-23 Rca Corporation Centering support for a rotatable wafer support susceptor
US4322592A (en) * 1980-08-22 1982-03-30 Rca Corporation Susceptor for heating semiconductor substrates
US4496828A (en) * 1983-07-08 1985-01-29 Ultra Carbon Corporation Susceptor assembly
US4579080A (en) * 1983-12-09 1986-04-01 Applied Materials, Inc. Induction heated reactor system for chemical vapor deposition
US4588451A (en) * 1984-04-27 1986-05-13 Advanced Energy Fund Limited Partnership Metal organic chemical vapor deposition of 111-v compounds on silicon
US4596208A (en) * 1984-11-05 1986-06-24 Spire Corporation CVD reaction chamber

Also Published As

Publication number Publication date
EP0203616A2 (en) 1986-12-03
CA1268688A (en) 1990-05-08
EP0203616A3 (en) 1987-08-19
EP0203616B1 (en) 1989-08-02
DE3664793D1 (en) 1989-09-07
US4705700A (en) 1987-11-10
JPH0246558B2 (enExample) 1990-10-16

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