DE3664793D1 - Chemical vapor deposition method for the thin film of semiconductor - Google Patents
Chemical vapor deposition method for the thin film of semiconductorInfo
- Publication number
- DE3664793D1 DE3664793D1 DE8686107382T DE3664793T DE3664793D1 DE 3664793 D1 DE3664793 D1 DE 3664793D1 DE 8686107382 T DE8686107382 T DE 8686107382T DE 3664793 T DE3664793 T DE 3664793T DE 3664793 D1 DE3664793 D1 DE 3664793D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- thin film
- vapor deposition
- chemical vapor
- deposition method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
- C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60118378A JPS61275192A (ja) | 1985-05-31 | 1985-05-31 | 半導体薄膜気相成長法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3664793D1 true DE3664793D1 (en) | 1989-09-07 |
Family
ID=14735212
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686107382T Expired DE3664793D1 (en) | 1985-05-31 | 1986-05-30 | Chemical vapor deposition method for the thin film of semiconductor |
Country Status (5)
Country | Link |
---|---|
US (1) | US4705700A (de) |
EP (1) | EP0203616B1 (de) |
JP (1) | JPS61275192A (de) |
CA (1) | CA1268688A (de) |
DE (1) | DE3664793D1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3709657A1 (de) * | 1987-03-24 | 1988-10-06 | Licentia Gmbh | Movpe-verfahren |
JPH01125923A (ja) * | 1987-11-11 | 1989-05-18 | Sumitomo Chem Co Ltd | 気相成長装置 |
US5298107A (en) * | 1992-02-27 | 1994-03-29 | Applied Materials, Inc. | Processing method for growing thick films |
GB9206442D0 (en) * | 1992-03-25 | 1992-05-06 | Metal Research Semiconductors | Treatment chamber |
US5747113A (en) * | 1996-07-29 | 1998-05-05 | Tsai; Charles Su-Chang | Method of chemical vapor deposition for producing layer variation by planetary susceptor rotation |
US6231933B1 (en) | 1999-03-18 | 2001-05-15 | Primaxx, Inc. | Method and apparatus for metal oxide chemical vapor deposition on a substrate surface |
KR100631972B1 (ko) * | 2005-02-28 | 2006-10-11 | 삼성전기주식회사 | 화학기상증착 공정을 이용한 초격자 반도체 구조를 제조하는 방법 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3633537A (en) * | 1970-07-06 | 1972-01-11 | Gen Motors Corp | Vapor deposition apparatus with planetary susceptor |
US4275282A (en) * | 1980-03-24 | 1981-06-23 | Rca Corporation | Centering support for a rotatable wafer support susceptor |
US4322592A (en) * | 1980-08-22 | 1982-03-30 | Rca Corporation | Susceptor for heating semiconductor substrates |
US4496828A (en) * | 1983-07-08 | 1985-01-29 | Ultra Carbon Corporation | Susceptor assembly |
US4579080A (en) * | 1983-12-09 | 1986-04-01 | Applied Materials, Inc. | Induction heated reactor system for chemical vapor deposition |
US4588451A (en) * | 1984-04-27 | 1986-05-13 | Advanced Energy Fund Limited Partnership | Metal organic chemical vapor deposition of 111-v compounds on silicon |
US4596208A (en) * | 1984-11-05 | 1986-06-24 | Spire Corporation | CVD reaction chamber |
-
1985
- 1985-05-31 JP JP60118378A patent/JPS61275192A/ja active Granted
-
1986
- 1986-05-28 CA CA000510171A patent/CA1268688A/en not_active Expired
- 1986-05-29 US US06/868,060 patent/US4705700A/en not_active Expired - Lifetime
- 1986-05-30 EP EP86107382A patent/EP0203616B1/de not_active Expired
- 1986-05-30 DE DE8686107382T patent/DE3664793D1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS61275192A (ja) | 1986-12-05 |
EP0203616A2 (de) | 1986-12-03 |
US4705700A (en) | 1987-11-10 |
CA1268688A (en) | 1990-05-08 |
EP0203616A3 (en) | 1987-08-19 |
EP0203616B1 (de) | 1989-08-02 |
JPH0246558B2 (de) | 1990-10-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |