JPS61272928A - ドライエツチング方法 - Google Patents

ドライエツチング方法

Info

Publication number
JPS61272928A
JPS61272928A JP11425885A JP11425885A JPS61272928A JP S61272928 A JPS61272928 A JP S61272928A JP 11425885 A JP11425885 A JP 11425885A JP 11425885 A JP11425885 A JP 11425885A JP S61272928 A JPS61272928 A JP S61272928A
Authority
JP
Japan
Prior art keywords
electrodes
frequency power
high frequency
etching
supplied
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11425885A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0438132B2 (enExample
Inventor
Akira Ishibashi
暁 石橋
Kazuo Takakuwa
高桑　一雄
Kyuzo Nakamura
久三 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP11425885A priority Critical patent/JPS61272928A/ja
Publication of JPS61272928A publication Critical patent/JPS61272928A/ja
Publication of JPH0438132B2 publication Critical patent/JPH0438132B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP11425885A 1985-05-29 1985-05-29 ドライエツチング方法 Granted JPS61272928A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11425885A JPS61272928A (ja) 1985-05-29 1985-05-29 ドライエツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11425885A JPS61272928A (ja) 1985-05-29 1985-05-29 ドライエツチング方法

Publications (2)

Publication Number Publication Date
JPS61272928A true JPS61272928A (ja) 1986-12-03
JPH0438132B2 JPH0438132B2 (enExample) 1992-06-23

Family

ID=14633280

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11425885A Granted JPS61272928A (ja) 1985-05-29 1985-05-29 ドライエツチング方法

Country Status (1)

Country Link
JP (1) JPS61272928A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02177429A (ja) * 1988-09-15 1990-07-10 Lam Res Corp プラズマエッチングシステムの分相駆動装置
JPH0641771A (ja) * 1993-03-17 1994-02-15 Hitachi Ltd プラズマ処理装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3860507A (en) * 1972-11-29 1975-01-14 Rca Corp Rf sputtering apparatus and method
JPS52127766A (en) * 1976-04-19 1977-10-26 Fujitsu Ltd Plasma etching unit
JPS5916979A (ja) * 1982-07-19 1984-01-28 Kokusai Electric Co Ltd プラズマエツチング装置
JPS61164224A (ja) * 1985-01-17 1986-07-24 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション プラズマ発生装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3860507A (en) * 1972-11-29 1975-01-14 Rca Corp Rf sputtering apparatus and method
JPS52127766A (en) * 1976-04-19 1977-10-26 Fujitsu Ltd Plasma etching unit
JPS5916979A (ja) * 1982-07-19 1984-01-28 Kokusai Electric Co Ltd プラズマエツチング装置
JPS61164224A (ja) * 1985-01-17 1986-07-24 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション プラズマ発生装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02177429A (ja) * 1988-09-15 1990-07-10 Lam Res Corp プラズマエッチングシステムの分相駆動装置
EP0359153B2 (en) † 1988-09-15 2003-06-04 Lam Research Corporation Split-phase driver for plasma etch system
JPH0641771A (ja) * 1993-03-17 1994-02-15 Hitachi Ltd プラズマ処理装置

Also Published As

Publication number Publication date
JPH0438132B2 (enExample) 1992-06-23

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