JPH0438132B2 - - Google Patents

Info

Publication number
JPH0438132B2
JPH0438132B2 JP60114258A JP11425885A JPH0438132B2 JP H0438132 B2 JPH0438132 B2 JP H0438132B2 JP 60114258 A JP60114258 A JP 60114258A JP 11425885 A JP11425885 A JP 11425885A JP H0438132 B2 JPH0438132 B2 JP H0438132B2
Authority
JP
Japan
Prior art keywords
electrodes
electrode
frequency power
etching
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60114258A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61272928A (ja
Inventor
Akira Ishibashi
Kazuo Takakuwa
Kyuzo Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP11425885A priority Critical patent/JPS61272928A/ja
Publication of JPS61272928A publication Critical patent/JPS61272928A/ja
Publication of JPH0438132B2 publication Critical patent/JPH0438132B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP11425885A 1985-05-29 1985-05-29 ドライエツチング方法 Granted JPS61272928A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11425885A JPS61272928A (ja) 1985-05-29 1985-05-29 ドライエツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11425885A JPS61272928A (ja) 1985-05-29 1985-05-29 ドライエツチング方法

Publications (2)

Publication Number Publication Date
JPS61272928A JPS61272928A (ja) 1986-12-03
JPH0438132B2 true JPH0438132B2 (enExample) 1992-06-23

Family

ID=14633280

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11425885A Granted JPS61272928A (ja) 1985-05-29 1985-05-29 ドライエツチング方法

Country Status (1)

Country Link
JP (1) JPS61272928A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4871421A (en) † 1988-09-15 1989-10-03 Lam Research Corporation Split-phase driver for plasma etch system
JP2609792B2 (ja) * 1993-03-17 1997-05-14 株式会社日立製作所 プラズマ処理装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3860507A (en) * 1972-11-29 1975-01-14 Rca Corp Rf sputtering apparatus and method
JPS52127766A (en) * 1976-04-19 1977-10-26 Fujitsu Ltd Plasma etching unit
JPS6017031B2 (ja) * 1982-07-19 1985-04-30 国際電気株式会社 プラズマエツチング装置
US4618477A (en) * 1985-01-17 1986-10-21 International Business Machines Corporation Uniform plasma for drill smear removal reactor

Also Published As

Publication number Publication date
JPS61272928A (ja) 1986-12-03

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