JPS61270867A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS61270867A
JPS61270867A JP60112694A JP11269485A JPS61270867A JP S61270867 A JPS61270867 A JP S61270867A JP 60112694 A JP60112694 A JP 60112694A JP 11269485 A JP11269485 A JP 11269485A JP S61270867 A JPS61270867 A JP S61270867A
Authority
JP
Japan
Prior art keywords
thyristor
phototransistor
type impurity
gate
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60112694A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0551187B2 (enrdf_load_stackoverflow
Inventor
Yoshimitsu Tanaka
義光 田中
Kiyoshi Hosoya
清志 細谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP60112694A priority Critical patent/JPS61270867A/ja
Publication of JPS61270867A publication Critical patent/JPS61270867A/ja
Publication of JPH0551187B2 publication Critical patent/JPH0551187B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors

Landscapes

  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
JP60112694A 1985-05-25 1985-05-25 半導体装置 Granted JPS61270867A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60112694A JPS61270867A (ja) 1985-05-25 1985-05-25 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60112694A JPS61270867A (ja) 1985-05-25 1985-05-25 半導体装置

Publications (2)

Publication Number Publication Date
JPS61270867A true JPS61270867A (ja) 1986-12-01
JPH0551187B2 JPH0551187B2 (enrdf_load_stackoverflow) 1993-07-30

Family

ID=14593147

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60112694A Granted JPS61270867A (ja) 1985-05-25 1985-05-25 半導体装置

Country Status (1)

Country Link
JP (1) JPS61270867A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0193170A (ja) * 1987-10-05 1989-04-12 Toshiba Corp 光トリガ型半導体装置
JPH07122729A (ja) * 1993-10-25 1995-05-12 Nec Corp フォトサイリスタ

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5467393A (en) * 1977-11-09 1979-05-30 Hitachi Ltd High dielectric strength semiconductor element
JPS5593262A (en) * 1979-01-05 1980-07-15 Nec Corp Semiconductor device
JPS55162281A (en) * 1979-05-31 1980-12-17 Siemens Ag Light controlled thyristor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5467393A (en) * 1977-11-09 1979-05-30 Hitachi Ltd High dielectric strength semiconductor element
JPS5593262A (en) * 1979-01-05 1980-07-15 Nec Corp Semiconductor device
JPS55162281A (en) * 1979-05-31 1980-12-17 Siemens Ag Light controlled thyristor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0193170A (ja) * 1987-10-05 1989-04-12 Toshiba Corp 光トリガ型半導体装置
JPH07122729A (ja) * 1993-10-25 1995-05-12 Nec Corp フォトサイリスタ

Also Published As

Publication number Publication date
JPH0551187B2 (enrdf_load_stackoverflow) 1993-07-30

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