JPS61267320A - 荷電ビ−ム露光方法 - Google Patents

荷電ビ−ム露光方法

Info

Publication number
JPS61267320A
JPS61267320A JP10870485A JP10870485A JPS61267320A JP S61267320 A JPS61267320 A JP S61267320A JP 10870485 A JP10870485 A JP 10870485A JP 10870485 A JP10870485 A JP 10870485A JP S61267320 A JPS61267320 A JP S61267320A
Authority
JP
Japan
Prior art keywords
pattern
sub
deflection
deflector
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10870485A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0586850B2 (cg-RX-API-DMAC7.html
Inventor
Mineo Goto
後藤　峰夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP10870485A priority Critical patent/JPS61267320A/ja
Publication of JPS61267320A publication Critical patent/JPS61267320A/ja
Publication of JPH0586850B2 publication Critical patent/JPH0586850B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
JP10870485A 1985-05-21 1985-05-21 荷電ビ−ム露光方法 Granted JPS61267320A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10870485A JPS61267320A (ja) 1985-05-21 1985-05-21 荷電ビ−ム露光方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10870485A JPS61267320A (ja) 1985-05-21 1985-05-21 荷電ビ−ム露光方法

Publications (2)

Publication Number Publication Date
JPS61267320A true JPS61267320A (ja) 1986-11-26
JPH0586850B2 JPH0586850B2 (cg-RX-API-DMAC7.html) 1993-12-14

Family

ID=14491498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10870485A Granted JPS61267320A (ja) 1985-05-21 1985-05-21 荷電ビ−ム露光方法

Country Status (1)

Country Link
JP (1) JPS61267320A (cg-RX-API-DMAC7.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63283130A (ja) * 1987-05-15 1988-11-21 Toshiba Mach Co Ltd 荷電ビ−ム描画方法及び描画装置
JPS6411328A (en) * 1987-06-30 1989-01-13 Ibm Electron beam exposure system

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59231810A (ja) * 1983-06-14 1984-12-26 Toshiba Corp 電子ビ−ム露光装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59231810A (ja) * 1983-06-14 1984-12-26 Toshiba Corp 電子ビ−ム露光装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63283130A (ja) * 1987-05-15 1988-11-21 Toshiba Mach Co Ltd 荷電ビ−ム描画方法及び描画装置
JPS6411328A (en) * 1987-06-30 1989-01-13 Ibm Electron beam exposure system

Also Published As

Publication number Publication date
JPH0586850B2 (cg-RX-API-DMAC7.html) 1993-12-14

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term