JPS6126591A - 結晶成長方法 - Google Patents

結晶成長方法

Info

Publication number
JPS6126591A
JPS6126591A JP14910684A JP14910684A JPS6126591A JP S6126591 A JPS6126591 A JP S6126591A JP 14910684 A JP14910684 A JP 14910684A JP 14910684 A JP14910684 A JP 14910684A JP S6126591 A JPS6126591 A JP S6126591A
Authority
JP
Japan
Prior art keywords
crystal
melt
impurity
type
pulling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14910684A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0362679B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Ritsuo Takizawa
滝沢　律夫
Koichiro Honda
耕一郎 本田
Akira Osawa
大沢　昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14910684A priority Critical patent/JPS6126591A/ja
Publication of JPS6126591A publication Critical patent/JPS6126591A/ja
Publication of JPH0362679B2 publication Critical patent/JPH0362679B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP14910684A 1984-07-18 1984-07-18 結晶成長方法 Granted JPS6126591A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14910684A JPS6126591A (ja) 1984-07-18 1984-07-18 結晶成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14910684A JPS6126591A (ja) 1984-07-18 1984-07-18 結晶成長方法

Publications (2)

Publication Number Publication Date
JPS6126591A true JPS6126591A (ja) 1986-02-05
JPH0362679B2 JPH0362679B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-09-26

Family

ID=15467825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14910684A Granted JPS6126591A (ja) 1984-07-18 1984-07-18 結晶成長方法

Country Status (1)

Country Link
JP (1) JPS6126591A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62226890A (ja) * 1986-03-27 1987-10-05 Komatsu Denshi Kinzoku Kk 単結晶及びその製造方法
JPH01215789A (ja) * 1988-02-25 1989-08-29 Toshiba Corp 半導体の結晶引上げ方法
JP2010189253A (ja) * 2009-01-05 2010-09-02 Commissariat A L'energie Atomique & Aux Energies Alternatives 結晶化中にドープ半導体チャージを添加する半導体の凝固方法
JP2015226066A (ja) * 2014-05-28 2015-12-14 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ 半導体素子、シリコンウエハ、及びシリコンインゴット

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5266372A (en) * 1975-11-28 1977-06-01 Nec Home Electronics Ltd Manufacture of silicon single crystal
JPS55130894A (en) * 1979-03-28 1980-10-11 Hitachi Ltd Single crystal picking up apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5266372A (en) * 1975-11-28 1977-06-01 Nec Home Electronics Ltd Manufacture of silicon single crystal
JPS55130894A (en) * 1979-03-28 1980-10-11 Hitachi Ltd Single crystal picking up apparatus

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62226890A (ja) * 1986-03-27 1987-10-05 Komatsu Denshi Kinzoku Kk 単結晶及びその製造方法
JPH01215789A (ja) * 1988-02-25 1989-08-29 Toshiba Corp 半導体の結晶引上げ方法
JP2010189253A (ja) * 2009-01-05 2010-09-02 Commissariat A L'energie Atomique & Aux Energies Alternatives 結晶化中にドープ半導体チャージを添加する半導体の凝固方法
JP2015226066A (ja) * 2014-05-28 2015-12-14 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ 半導体素子、シリコンウエハ、及びシリコンインゴット
US9786748B2 (en) 2014-05-28 2017-10-10 Infineon Technologies Ag Semiconductor device, silicon wafer and silicon ingot
JP2020074381A (ja) * 2014-05-28 2020-05-14 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ 半導体素子、シリコンウエハ、及びシリコンインゴット
US10910475B2 (en) 2014-05-28 2021-02-02 Infineon Technologies Ag Method of manufacturing a silicon wafer

Also Published As

Publication number Publication date
JPH0362679B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-09-26

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