JPH0362679B2 - - Google Patents
Info
- Publication number
- JPH0362679B2 JPH0362679B2 JP59149106A JP14910684A JPH0362679B2 JP H0362679 B2 JPH0362679 B2 JP H0362679B2 JP 59149106 A JP59149106 A JP 59149106A JP 14910684 A JP14910684 A JP 14910684A JP H0362679 B2 JPH0362679 B2 JP H0362679B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- melt
- type
- pulling
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14910684A JPS6126591A (ja) | 1984-07-18 | 1984-07-18 | 結晶成長方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14910684A JPS6126591A (ja) | 1984-07-18 | 1984-07-18 | 結晶成長方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6126591A JPS6126591A (ja) | 1986-02-05 |
JPH0362679B2 true JPH0362679B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-09-26 |
Family
ID=15467825
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14910684A Granted JPS6126591A (ja) | 1984-07-18 | 1984-07-18 | 結晶成長方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6126591A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62226890A (ja) * | 1986-03-27 | 1987-10-05 | Komatsu Denshi Kinzoku Kk | 単結晶及びその製造方法 |
JPH085740B2 (ja) * | 1988-02-25 | 1996-01-24 | 株式会社東芝 | 半導体の結晶引上げ方法 |
FR2940806B1 (fr) * | 2009-01-05 | 2011-04-08 | Commissariat Energie Atomique | Procede de solidification de semi-conducteur avec ajout de charges de semi-conducteur dope au cours de la cristallisation |
DE102014107590B3 (de) * | 2014-05-28 | 2015-10-01 | Infineon Technologies Ag | Halbleitervorrichtung, Siliziumwafer und Verfahren zum Herstellen eines Siliziumwafers |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5266372A (en) * | 1975-11-28 | 1977-06-01 | Nec Home Electronics Ltd | Manufacture of silicon single crystal |
JPS55130894A (en) * | 1979-03-28 | 1980-10-11 | Hitachi Ltd | Single crystal picking up apparatus |
-
1984
- 1984-07-18 JP JP14910684A patent/JPS6126591A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6126591A (ja) | 1986-02-05 |
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