JPS61261286A - 半導体装置用基板の製造方法 - Google Patents
半導体装置用基板の製造方法Info
- Publication number
- JPS61261286A JPS61261286A JP60101923A JP10192385A JPS61261286A JP S61261286 A JPS61261286 A JP S61261286A JP 60101923 A JP60101923 A JP 60101923A JP 10192385 A JP10192385 A JP 10192385A JP S61261286 A JPS61261286 A JP S61261286A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- crystal grains
- ion implantation
- epitaxial growth
- channeling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60101923A JPS61261286A (ja) | 1985-05-14 | 1985-05-14 | 半導体装置用基板の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60101923A JPS61261286A (ja) | 1985-05-14 | 1985-05-14 | 半導体装置用基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61261286A true JPS61261286A (ja) | 1986-11-19 |
| JPH0580438B2 JPH0580438B2 (enExample) | 1993-11-09 |
Family
ID=14313431
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60101923A Granted JPS61261286A (ja) | 1985-05-14 | 1985-05-14 | 半導体装置用基板の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61261286A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5627086A (en) * | 1992-12-10 | 1997-05-06 | Sony Corporation | Method of forming thin-film single crystal for semiconductor |
-
1985
- 1985-05-14 JP JP60101923A patent/JPS61261286A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5627086A (en) * | 1992-12-10 | 1997-05-06 | Sony Corporation | Method of forming thin-film single crystal for semiconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0580438B2 (enExample) | 1993-11-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4808546A (en) | SOI process for forming a thin film transistor using solid phase epitaxy | |
| JP2746606B2 (ja) | 大粒子多結晶質膜の製造方法 | |
| JPS59155121A (ja) | 半導体薄膜の製造方法 | |
| JPS61241909A (ja) | Soi結晶形成法 | |
| JPS61261286A (ja) | 半導体装置用基板の製造方法 | |
| US5382549A (en) | Method of manufacturing polycrystalline silicon having columnar orientation | |
| JPH06107491A (ja) | 結晶性薄膜製造方法 | |
| JP2743370B2 (ja) | 多結晶膜の形成方法 | |
| JPS62120014A (ja) | 半導体装置用基板の製造方法 | |
| JP2800060B2 (ja) | 半導体膜の製造方法 | |
| JPS61261285A (ja) | 半導体装置用基板の製造方法 | |
| JP2680114B2 (ja) | 結晶性半導体薄膜の形成方法 | |
| JPS6244403B2 (enExample) | ||
| JPS6130018B2 (enExample) | ||
| JPH02188499A (ja) | 結晶粒径の大きい多結晶シリコン膜の製法 | |
| JP2603351B2 (ja) | 結晶成長方法及び該方法によって得られた結晶物品 | |
| JP2833878B2 (ja) | 半導体薄膜の形成方法 | |
| JP3217419B2 (ja) | 結晶膜の形成方法 | |
| JPH02143414A (ja) | 単結晶膜の形成方法 | |
| JPH0547660A (ja) | 半導体薄膜の固相成長方法 | |
| JPS63278217A (ja) | 半導体基板の製造方法 | |
| JPH0732121B2 (ja) | 半導体装置の製造方法 | |
| JPH0311618A (ja) | 半導体の製造法 | |
| JPH0752715B2 (ja) | 多結晶シリコン薄膜の形成方法 | |
| JPH059089A (ja) | 結晶の成長方法 |