JPS61253827A - 半導体素子の組立方法 - Google Patents

半導体素子の組立方法

Info

Publication number
JPS61253827A
JPS61253827A JP60095556A JP9555685A JPS61253827A JP S61253827 A JPS61253827 A JP S61253827A JP 60095556 A JP60095556 A JP 60095556A JP 9555685 A JP9555685 A JP 9555685A JP S61253827 A JPS61253827 A JP S61253827A
Authority
JP
Japan
Prior art keywords
bonding
temperature
semiconductor element
held
leadframe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60095556A
Other languages
English (en)
Inventor
Kazuhiro Yamamori
山森　和弘
Hirozo Sugai
菅井　普三
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60095556A priority Critical patent/JPS61253827A/ja
Publication of JPS61253827A publication Critical patent/JPS61253827A/ja
Pending legal-status Critical Current

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  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は半導体素子の組立方法に関し、特にボンディン
グ強度の向上を図ったものである。
〔発明の技術的背景〕
従来の半導体素子の組立方法は、第６図に示すように、
リードフレーム１のマウント位置に半導体ペレット２を
配置して固着し、その電極パッド３と外部リード４との
接続は、導電性金属細線５を橋絡することにより達成さ
れている。
この導電性金属細線の材料によってはその雰囲気によっ
てもたらされる酸化物の形成を抑制する手法が種々配慮
されており、特開昭５５−８８３１８号公報によって開
示された技術もその１つである。即ち被ボンデイング領
域を選択的に活性化する手法によっているために、ボン
ディング細線に酸化物が形成されボンディング強度が不
充分となる外、ボール形成も難かしくなる。
一方、特開昭５７−５Ｉ２３７号公報ではボンディング
細線を導出するキャピラリ先端部を還元雰囲気に保持さ
れたカバー内に導入して、所望形状のボールを形成する
と共にボンディング細線の酸化を防止する技術も開示さ
れている。
しかし、おおい等の複雑な機構が必要であり、現在１秒
以下の処理速度が要求されるボンディング強度にあって
は、故障が起き易く保守管理に手間を要する等の難点が
ある。
前述のように導電性金属細線の材質によってはその酸化
を防止してボールの真円度を調整するように技術的配慮
が払われているのが現状であり、更に半導体素子を取り
着けるリードフレームの材質も銀を部分的に鍍金手段で
被覆するのに代えて、銅又は銅合金リードフレームを採
用する方向にある。これはこの酸化し易い材料でも充分
に還元した際にはボンディング細線の材質如何に拘らず
その熱圧着強度が得られる認識に立脚するものである。
〔背景技術の問題点〕
銅又は銅合金よりなるリードフレームはその材料の圧延
材からプレス工程によって所定の形状に打ち抜き、付着
した油脂成分を有機溶媒で脱脂洗滌後前述のようにＮ２
１０　Ｖｏ１％、　Ｎ２９０　Ｖｏ１％の混合ガス雰囲
気で還元し、ボンディングを実施した。
しかし、銅又は銅合金からなるリードフレームでは有機
物等が強固に付着する場合がありボンディング直前での
還元反応だけでは完全に除去されない。
一方この還元温度はすでに取り着けられた半導　　　　
　　。
体素子の制約から際限なく高めることも不可能である。
従って、還元温度は３００℃〜３２０℃程度に限定され
ているが、量産的な見地からみると前記脱脂洗滌等に基
づくと想定される有機物の付着がボンディング強度を不
充分にしていると考えられる。
〔発明の目的〕
本発明は、上記欠点を除去した新規な半導体素子の組立
方法を提供するもので、特に銅系リードフレームの還元
をより充分に実施して導電性金属細線とのボンディング
強度を向上するものである。
〔発明の概要〕
この目的を達成するために、銅又は銅合金からなるリー
ドフレームを予めその軟化温度より２０℃〜３０℃位低
温で還元処理を実施して表面状態を清浄にしてから所定
の工程を経て半導体素子を組み立てる方法を提供する。
〔発明の実施例〕
第１図乃至第６図により本発明を詳述する。
本発明では銅又は銅合金からなる圧延材をプレス工程で
所望の形、状に打抜き、付着した油脂成分を有機溶媒で
脱脂処理し、更に水素雰囲気で熱処理する。第２図には
この銅もしくは銅合金からなるリードフレームの搬送順
路を示したが、この熱処理工程の実施位置は除外しであ
る。この実施位置もこの搬送路１０に設置するのが好都
合であるが、他の炉を使用しても差支えないが、この場
合は適当な容器に収容して酸化防止に配慮しなければな
らない。
この熱処理を行う位置は、Ｎ２雰囲気に保ち、第１図に
示す温度履歴をリードフレームに与えるが、温度はリー
ドフレームの材質によって変るが最小３５０℃最大４３
０℃に１５分〜２０分保持して、前記脱脂工程で除去さ
れない有機成分等を揮散もしくは還元する。
このような処理が完了したリードフレーム１１は引続き
搬送路１０内を移動する。前記搬送路１０内にはその適
当な位置からＮ２及びＮ２１０容量を供給して還元性雰
囲気に保持され、ダイボンディング部１２，ワイヤボン
ディング部１３及びポストボンディング部１４をある間
隔をおいて設置し，夫々の位置には半導体ペレット１５
、キャピラリ１８及び押圧具２０が出入することができ
るように窓１６．１９及び２２が形成される。前記搬送
路の１０の床部にはガイドレール等の搬送手段が設けら
れており、ダイボンディング部１２。
ワイヤボンディング１３及びポストボンディング部１４
の床部には搬送されたリードフレームに連動して移動可
能なヒータ２３，２４．２５を配置する。
先ず、前記熱処理を終えたリードフレーム１１は搬送手
段によってダイボンディング部１２に供給され、ヒータ
２３によって所定温度に加熱し、こ＼に窓１６から半導
体ペレット１５が供給され半田層２６を介して固着する
。このリードフレームは無酸素銅、燐脱酸鋼，Ｃｕー２
０Ｖｏ１％Ａｕ等の銅又は調合金製である。
次いで、第３図（Ａ）に示すように、半導体ペレット１
５を固着したリードフレーム１１は、ワイヤボンディン
グ部１３に搬送しヒータ２４により約３００℃に加熱さ
れるのでこのペレット１５に設けた電極２７も同様な温
度を示す。この特恵１９の入口附近にキャピラリ１８が
降下し、それから導出する細線１７先端はこの窓附近に
設置するバーナ２８で加熱されてボール２９を形成する
。前記側、Ｉｊｔ１７は無酸素鋼、燐脱酸鋼、Ｃｕ−２
０Ｖｏ１％Ａｕ等製であるが、他の材質即ちＡ１又はＡ
ｕ製でも良し）。
バーナ２８は第４図に示すように外管２８ａと僅かに径
小な内管２８ｂの二重構造をもち、内管２８ｂからはＨ
２及び０２の混合ガスによる酸水素炎３０を形成し、外
管２８ａからは空気を噴出して酸水素炎３０を囲むエア
ーカーテン３１を形成する。
このボール２９の形成に当っては窓１９の一部を構成す
る可動カバー３２でボンディング細線の先端部を囲み、
ワイヤボンディング部１゛３に噴上げる還元性ガス３３
の雰囲気内でかつエアーカーテン３１で包まれた酸水素
炎３０によって形成する。
次いで、キャピラリ１８を降下して電極２７にボール２
９を熱圧着するが、ボンディング細線１７の直径が２７
μｍφをもつ銅細線では８０〜１００ｇの荷重を加えて
、第５図（Ａ）に示すように、電極２７に０．５〜３μ
ｍ食込んでボンディングを完了する。尚電極２７は厚さ
１〜３μｍのＡ１層で形成する。
引続き、第３図（Ｂ）に示すようにキャピラリ１８を上
昇して窓１９の位置でバーナ２８によりボンディング細
線１７を所定の長さに切断すると同時にボール２９ａ、
２９ｂを形成するが、この場合も還元性ガス３３で囲ま
れている。
この次は第３図（Ｃ）に示すように電極２７にボンディ
ングしたボンディング細線１７ａをポストボンディング
部２１側に所定角度に折曲げ後ホーミング工程を施して
から次のポストボンディング部１４に搬送するが、搬送
路１０内のガス雰囲気温度は２００〜３００℃に保持す
る。
第３図（Ｄ）にはポストボンディング工程を示している
。即ちポストボンディング部１４にリードフレーム１１
が設定されると、ヒータ２５で約３００℃以上に加熱さ
れ押圧具２０が窓２２より降下してホーミング工程で成
形されたボンディング細線１７ａ端部のボール２９ａを
外部リード２１に熱圧着する。この際ボール２９ａには
３００〜５００ｇｒの荷重を加えて０．５〜３μｍの深
さを外部リード２１に食込ませる。この工程でも可動カ
バー３２で囲み還元性ガス３３で包囲する。
このように銅系材料からなるリードフレームに銅系材料
の細線を架橋して半導体素子の組立を終える。
〔発明の効果〕
本発明では予め熱処理が完了した銅系リードフレームを
利用してボンディング工程を実施したが、第６図に示す
ようにそのボンディング強度言い°換えるとその剥れ発
生の割合は確実に低下している。
更にこの熱処理の有無によるリードフレーム分析値を下
表に示す。
第１表 このように明らかに本発明を適用したリードフレームは
清浄でありこれに由来すると想定されるボンディング強
度不足を改善している。
以上のようにＣｕ系のリードフレーム及びＣｕ系のボン
ディング細線の適用を確実にしかも量産的に達成可能と
しており実用上の効果は明らかである。
【図面の簡単な説明】
第１図は本発明の熱処理時の温度勾配を示す図、第２図
は実施例の概略、構成を示す説明図、第３図（Ａ）〜（
Ｄ）は本発明の主要な工程を示す説明図、第４図は本発
明に係るバーナの炎の状態を示す図、第５図（Ａ）〜（
Ｂ）は本発明におけるボンディング線の接続部分を示す
説明図、第６図は横軸に被試験グループを採り縦軸にハ
ガレ発生率を採ってその関係を示す説明図、第７図は、
従来方法によりボンディング細線を架橋したリードフレ
ームの要部を示す斜視図である。 １０：搬送路 １１：リードフレーム（被搬送部材） １２：ダイボンディング部 １３：ワイヤボンディング部 １４：ポストボンディング部 １５：半導体ペレット １６、１９．２２：窓 １７：ボンディング細線 ２０：押圧具 ２１：外部リード

Claims (1)

    【特許請求の範囲】
  1. 還元ガス雰囲気で熱処理した銅もしくは銅合金からなる
    被搬送部材に半導体素子を固着し、還元ガスを満たした
    搬送路に不連続に設け不活性ガス及び還元性ガス雰囲気
    に囲まれるボンディング部に前記被搬送部材ならびに導
    電性金属細線を供給し、前記導電性金属細線を還元性ガ
    ス雰囲気で加熱してボールに変形し、前記還元性ガス雰
    囲気の前記被搬送部材を所定温度に加熱して前記半導体
    素子の所定領域に前記ボールを熱圧着することを特徴と
    する半導体素子の組立方法。
JP60095556A 1985-05-07 1985-05-07 半導体素子の組立方法 Pending JPS61253827A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60095556A JPS61253827A (ja) 1985-05-07 1985-05-07 半導体素子の組立方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60095556A JPS61253827A (ja) 1985-05-07 1985-05-07 半導体素子の組立方法

Publications (1)

Publication Number Publication Date
JPS61253827A true JPS61253827A (ja) 1986-11-11

Family

ID=14140853

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60095556A Pending JPS61253827A (ja) 1985-05-07 1985-05-07 半導体素子の組立方法

Country Status (1)

Country Link
JP (1) JPS61253827A (ja)

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